Semiconductor module
A semiconductor module includes at least, a conductive pattern on the insulating substrate; a first semiconductor element on the conductive pattern, a second semiconductor element on the conductive pattern, a first power collecting portion connected to a first output electrode of the first semiconductor element with a first line; and a second power collecting portion connected to a second output electrode of the second semiconductor element with a second line. Each of the first and second semiconductor elements includes both a switching element and a diode. The conductive pattern is provided between the first power collecting portion and the second power collecting portion. A current path length from a first output electrode of the first semiconductor element to the first power collecting portion and a current path length from a second output electrode of the second semiconductor element to the second power collecting portion are equal to each other.
1 . A semiconductor module comprising:
an insulating substrate;
a conductive pattern on the insulating substrate;
a first semiconductor element on the conductive pattern, the first semiconductor element including a first input electrode, a first output electrode, and a first control electrode;
a second semiconductor element on the conductive pattern, the second semiconductor element including a second input electrode, a second output electrode, and a second control electrode;
a first power collecting portion electrically connected to the first output electrode with a first line; and
a second power collecting portion electrically connected to the second output electrode with a second line, wherein:
each of the first semiconductor element and the second semiconductor element includes both a switching element and a diode,
the conductive pattern is provided between the first power collecting portion and the second power collecting portion,
a current path length from the first output electrode to the first power collecting portion and a current path length from the second output electrode to the second power collecting portion are equal to each other,
the first power collecting portion and the second power collecting portion are arranged along a first axis,
the first semiconductor element and the second semiconductor element are arranged along the first axis between the first power collecting portion and the second power collecting portion,
the first semiconductor element is positioned closer to the first power collecting portion than the second power collecting portion, and
the second semiconductor element is positioned closer to the second power collecting portion than the first power collecting portion.
2 . The semiconductor module according to claim 1 , wherein:
the conductive pattern includes an input portion to be electrically connected to an input terminal,
the first input electrode is formed on a surface of the first semiconductor element facing the conductive pattern and is electrically connected to the input portion,
the second input electrode is formed on a surface of the second semiconductor element facing the conductive pattern and is electrically connected to the input portion,
the input portion is closer to a center of the conductive pattern than the first input electrode and the second input electrode are in plan view, and
a current path length from the input portion to the first input electrode and a current path length from the input portion to the second input electrode are equal to each other.
3 . The semiconductor module according to claim 2 , wherein:
the conductive pattern includes a slit, and
the slit extends along a direction from the input terminal to the input portion such that a current path length from the input terminal to the first input electrode through the input portion is equal to a current path length from the input terminal to the second input electrode through the input portion.
4 . The semiconductor module according to claim 1 , further comprising:
a third semiconductor element on the conductive pattern, the third semiconductor element including a third input electrode, a third output electrode, and a third control electrode; and
a fourth semiconductor element on the conductive pattern, the fourth semiconductor element including a fourth input electrode, a fourth output electrode, and a fourth control electrode, wherein:
the third output electrode is electrically connected to the first power collecting portion with a third line,
the fourth output electrode is electrically connected to the second power collecting portion with a fourth line, and
the following current path lengths are equal to each other:
a current path length from the first output electrode to the first power collecting portion;
a current path length from the second output electrode to the second power collecting portion;
a current path length from the third output electrode to the first power collecting portion; and
a current path length from the fourth output electrode to the second power collecting portion.
5 . The semiconductor module according to claim 4 , wherein:
the conductive pattern includes an arrangement portion for arranging:
the first semiconductor element;
the second semiconductor element;
the third semiconductor element; and
the fourth semiconductor element,
the first semiconductor element is provided at a first corner of a virtual rectangle along an outer edge of the arrangement portion,
the second semiconductor element is provided at a second corner of the virtual rectangle,
the third semiconductor element is provided at a third corner of the virtual rectangle, and
the fourth semiconductor element is provided at a fourth corner of the virtual rectangle.
6 . The semiconductor module according to claim 3 , further comprising a controlling conductive pattern on the insulating substrate, wherein:
the first control electrode is electrically connected to the controlling conductive pattern with a controlling line,
the second control electrode is electrically connected to the controlling conductive pattern with a controlling line, and
the controlling conductive pattern is on the insulating substrate and is provided in a region between the first semiconductor element and the second semiconductor element.
7 . The semiconductor module according to claim 6 , further comprising:
a first unit; and
a second unit, wherein:
each of the first unit and the second unit includes:
the insulating substrate;
the conductive pattern;
the first semiconductor element;
the second semiconductor element;
the first power collecting portion;
the second power collecting portion; and
the controlling conductive pattern, and
the controlling conductive pattern of the first unit and the controlling conductive pattern of the second unit are closer to an intermediate point between the first unit and the second unit than the conductive pattern of the first unit and the conductive pattern of the second unit are.
8 . The semiconductor module according to claim 7 , further comprising a connecting line for electrically connecting the first power collecting portion and the second power collecting portion included in the first unit to the conductive pattern included in the second unit,
wherein the connecting line overlaps with the conductive pattern of the first unit and the conductive pattern of the second unit in plan view.