Semiconductor package and method of manufacturing the same
A semiconductor package includes a package substrate, a first semiconductor device on the package substrate, an interposer on the package substrate, and a plurality of conductive structures that spaces apart the first semiconductor device from the interposer, wherein the interposer has a cavity into which a portion of the first semiconductor device is accommodated. The interposer has a plurality of spacers protruding from a bottom surface of the cavity of the interposer. The cavity has an inclined sidewall inclined at a predetermined angle with respect to the lower surface of the interposer. The spacer has an inclined side surface inclined at a predetermined angle with respect to the bottom surface of the cavity.
1 . A semiconductor package, comprising:
a package substrate;
a first semiconductor device on the package substrate;
an interposer on the package substrate;
a plurality of conductive structures that spaces apart the first semiconductor device from the interposer, wherein the interposer has a cavity into which a portion of the first semiconductor device is accommodated; and
a spacer that protrudes from a bottom surface of the cavity and is spaced apart from the first semiconductor device,
wherein the cavity has an inclined sidewall inclined at a first predetermined angle with respect to a lower surface of the interposer, and
the spacer has an inclined side surface inclined at a second predetermined angle with respect to the bottom surface of the cavity.
2 . The semiconductor package of claim 1 , wherein the cavity has a tapered shape.
3 . The semiconductor package of claim 1 , wherein the first predetermined angle is within a range of 15 degrees to 40 degrees.
4 . The semiconductor package of claim 1 , wherein a depth from the lower surface of the interposer to the bottom surface of the cavity in a vertical direction is within a range of 10 micrometers (μm) to 25 μm.
5 . The semiconductor package of claim 1 , wherein the inclined sidewall of the cavity includes at least one of a fillet shape and a chamfer shape.
6 . The semiconductor package of claim 1 , wherein the second predetermined angle is within a range of 15 degrees to 40 degrees.
7 . The semiconductor package of claim 1 , wherein the spacer includes at least one of a circular cone shape, a quadrangular pyramid shape, a hemisphere shape, a circular truncated cone shape, and a frustum of quadrangular pyramid shape.
8 . The semiconductor package of claim 1 , wherein an upper surface of the spacer is spaced apart from an upper surface of the first semiconductor device by a first distance, and the first distance is within a range of 15 μm to 30 μm.
9 . The semiconductor package of claim 1 , wherein the inclined sidewall of the cavity inclined at the first predetermined angle and the inclined side surface of the spacer inclined at the second predetermined angle are inclined towards a same direction.
10 . The semiconductor package of claim 1 , further comprising:
a second semiconductor device on the interposer.
11 . A semiconductor package, comprising:
a package substrate;
a semiconductor device on the package substrate;
a plurality of conductive structures on the package substrate, wherein the plurality of conductive structures is in an outer region of the semiconductor device; and
an interposer on the plurality of conductive structures, wherein the interposer includes a cavity that has an inclined sidewall inclined at a first predetermined angle with respect to a lower surface of the interposer,
wherein the cavity is configured to define a space in which the semiconductor device is accommodated,
wherein the interposer includes a plurality of spacer protrusions that protrude from a bottom surface of the cavity, and
wherein each of the plurality of spacer protrusions has an inclined side surface inclined at a second predetermined angle with respect to the bottom surface of the cavity.
12 . The semiconductor package of claim 11 , wherein the cavity has a tapered shape.
13 . The semiconductor package of claim 11 , wherein the first predetermined angle is within a range of 15 degrees to 40 degrees.
14 . The semiconductor package of claim 11 , wherein a depth from a lower surface of the interposer to the bottom surface of the cavity in a vertical direction is within a range of 10 micrometers (μm) to 25 μm.
15 . The semiconductor package of claim 11 , wherein the inclined sidewall of the cavity includes at least one of a fillet shape and a chamfer shape.
16 . The semiconductor package of claim 11 , wherein the second predetermined angle is within a range of 15 degrees to 40 degrees.
17 . The semiconductor package of claim 11 , wherein each of the plurality of spacer protrusions includes at least one of a circular cone shape, a quadrangular pyramid shape, a hemisphere shape, a circular truncated cone shape, and a frustum of quadrangular pyramid shape.
18 . The semiconductor package of claim 11 , wherein an upper surface of each of the plurality of spacer protrusions is spaced apart from an upper surface of the semiconductor device with a first distance, and the first distance is within a range of 15 μm to 30 μm.
19 . The semiconductor package of claim 11 , wherein the inclined sidewall of the cavity inclined at the first predetermined angle and the inclined side surface of each of the plurality of spacer protrusions inclined at the second predetermined angle are inclined towards a same direction.
20 . A method of manufacturing a semiconductor package, comprising:
mounting a semiconductor device on a package substrate;
forming an interposer having a cavity extending from a first surface of the interposer by a predetermined depth;
forming a spacer on a bottom surface of the cavity;
processing a sidewall of the cavity and a side surface of the spacer to have predetermined angles, wherein the side surface of the spacer has an angle within a range of 15 degrees to 40 degrees;
disposing the interposer on the package substrate via a plurality of conductive structures such that a portion of the semiconductor device is accommodated into the cavity; and
forming a molding member between the package substrate and the interposer.