IP Library › Granted Patent US 12690503
Granted Patent B2
US 12690503 · App. 18/060,680 · Granted Jul 21, 2026

Semiconductor device and method of manufacturing the same

Inventors: Tomohiro Nishiyama (Tokyo, JP); Toshiyuki Hata (Tokyo, JP); Tatsuaki Tsukuda (Tokyo, JP)
Assignee: Renesas Electronics Corporation
H10W90/701H10W70/465H10W70/60H10W70/65H10W90/401H10W72/5522H10W72/884H10W74/00H10W90/756
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Quick Facts
Patent No.
US 12690503
App. No.
18/060,680
Granted
Jul 21, 2026
Kind
B2
Abstract

Improving a performance of a semiconductor device. A method of manufacturing the semiconductor device, including steps of: forming a first convex portion on a front surface of a chip mounting portion; and mounting a semiconductor chip on the front surface of the chip mounting portion via a conductive adhesive material. Here, the semiconductor chip includes: a main transistor forming portion in which a main transistor is formed; and a sense transistor forming portion in which a sense transistor is formed. Also, in the step for mounting the semiconductor chip on the chip mounting portion, the semiconductor chip is mounted on the front surface of the chip mounting portion such that the sense transistor forming portion of the semiconductor chip overlaps the first convex portion formed on the front surface of the chip mounting portion in the step for forming the first convex portion.

Claims (12)

1 . A method of manufacturing a semiconductor device, comprising steps of:

(a) forming a first convex portion on a front surface of a chip mounting portion; and

(b) mounting a semiconductor chip on the front surface of the chip mounting portion via a conductive adhesive material, wherein the semiconductor chip includes: a main transistor forming portion in which a main transistor is formed; and

a sense transistor forming portion in which a sense transistor is formed, and

wherein, in the step of (b), the semiconductor chip is mounted on the front surface of the chip mounting portion such that the sense transistor forming portion of the semiconductor chip overlaps the first convex portion formed on the front surface of the chip mounting portion in the step of (a), and

wherein, in the conductive adhesive material, a thickness of a first portion located between the sense transistor forming portion of the semiconductor chip and the chip mounting portion is less than a thickness of a second portion located between the main transistor forming portion of the semiconductor chip and the chip mounting portion.

2 . The method according to claim 1 , wherein, in the step of (a), the first convex portion is formed by pressing a mold against the front surface of the chip mounting portion.

3 . The method according to claim 1 , wherein, in the step of (a), the first convex portion is formed by partially providing a film on the front surface of the chip mounting portion.

4 . The method according to claim 1 , wherein, in the step of (a), the first convex portion is formed by selectively etching the front surface of the chip mounting portion.

5 . The method according to claim 1 , wherein a second convex portion is formed on the front surface of the chip mounting portion at a region overlapping with the main transistor forming portion of the semiconductor chip, the region not overlapping with the sense transistor forming portion of the semiconductor chip.

6 . The method according to claim 5 , wherein, in cross-sectional view, the semiconductor chip is disposed horizontally on the chip mounting portion.

7 . The method according to claim 1 , wherein the first convex portion formed on the front surface of the chip mounting portion is formed so as to include the sense transistor forming portion in a perspective plan view.