Processing method of single-crystal quartz material

1 . A processing method of single-crystal quartz material, comprising:

determining an area to be processed where twin crystals are prone to occur on the single-crystal quartz material;

using a heater to heat the area to be processed on the single-crystal quartz material, so that processing difficulty of the area to be processed is reduced;

using a laser to process the single-crystal quartz material in a heated portion of the area to be processed;

wherein using the laser to process the single-crystal quartz material in the heated portion of the area to be processed comprises:

maintaining a temperature difference between a processing position of the laser and a portion in the area to be processed that has not been heated or a portion that has been processed and cooled down to be greater than or equal to 20 degrees C. when processing with the laser.

2 . The processing method of the single-crystal quartz material according to claim 1 , wherein the heater is a laser light source, an infrared heater, or a heating carrier configured to carry the single-crystal quartz material.

3 . The processing method of the single-crystal quartz material according to claim 1 , further comprising:

further using the laser to process the area to be processed after the heater has heated the area to be processed on the single-crystal quartz material.

4 . The processing method of the single-crystal quartz material according to claim 1 , further comprising:

further using the laser to process along a heating path of the heater on the area to be processed after the heater has started to heat the area to be processed on the single-crystal quartz material.

5 . The processing method of the single-crystal quartz material according to claim 1 , wherein the heater is a laser light source, and a beam size of a light beam emitted by the laser light source that irradiates the area to be processed is larger than a beam size of a light beam emitted by the laser that irradiates the area to be processed.

6 . The processing method of the single-crystal quartz material according to claim 1 , wherein the heater is a laser light source, wherein a wavelength of a light beam emitted by the laser light source is different from a wavelength of a light beam emitted by the laser.

7 . The processing method of the single-crystal quartz material according to claim 1 , wherein using the heater to heat the area to be processed on the single-crystal quartz material further comprises:

controlling energy applied by the heater to the area to be processed so that a temperature gradient of the area to be processed is less than or equal to a temperature gradient upper limit in a process of the heater heating the area to be processed on the single-crystal quartz material.

8 . The processing method of the single-crystal quartz material according to claim 1 , wherein using the heater to heat the area to be processed on the single-crystal quartz material further comprises:

controlling accumulated energy applied by the heater to the area to be processed so that a temperature of the area to be processed is less than or equal to an upper temperature limit in a process of the heater heating the area to be processed on the single-crystal quartz material.

9 . The processing method of the single-crystal quartz material according to claim 8 , wherein the upper temperature limit is 573 degrees Celsius.

10 . The processing method of the single-crystal quartz material according to claim 1 , wherein using the heater to heat the area to be processed on the single-crystal quartz material further comprises:

heating the single-crystal quartz material along a specific angle and a specific position of a crystal of the single-crystal quartz material.