Preparation method of high purity SiC powder
The process for preparing high purity SiC powders according to embodiments not only solves the environmental problems by using waste SiC, but also reduces the manufacturing cost with high yield, high productivity, and high uniformity.
1 . A process for preparing high purity SiC powders, which comprises:
cutting waste SiC;
removing graphite from the cut waste SiC;
pulverizing the waste SiC from which the graphite has been removed;
removing an iron (Fe) component from the pulverized waste SiC; and
cleaning the waste SiC from which the iron component has been removed,
wherein the step of removing graphite further comprises oxidizing the cut waste SiC at a temperature of 1,200° C. or lower.
2 . The process for preparing high purity SiC powders of claim 1 , wherein the step of removing graphite is carried out by shot blasting.
3 . The process for preparing high purity SiC powders of claim 1 , wherein the step of oxidizing the cut waste SiC comprises a first oxidation step and a second oxidation step.
4 . The process for preparing high purity SiC powders of claim 1 , wherein the step of removing graphite is carried out by shot blasting and comprises, prior to or after the shot blasting, oxidizing the cut waste SiC.
5 . The process for preparing high purity SiC powders of claim 4 , wherein the step of removing graphite comprises the first oxidation step, the shot blasting step, and the second oxidation step.
6 . A process for preparing high purity SiC powders, which comprises:
cutting waste SiC:
removing graphite from the cut waste SiC;
pulverizing the waste SiC from which the graphite has been removed;
removing an iron (Fe) component from the pulverized waste SiC; and
cleaning the waste SiC from which the iron component has been removed,
wherein the step of removing graphite from the cut waste SiC further comprises quenching the cut waste SiC at a temperature of 0° C. to 60° C.
7 . The process for preparing high purity SiC powders of claim 6 , wherein the step of quenching comprises a first quenching step and a second quenching step.
8 . A process for preparing high purity SiC powders, which comprises:
cutting waste SiC;
removing graphite from the cut waste SiC;
pulverizing the waste SiC from which the graphite has been removed;
removing an iron (Fe) component from the pulverized waste SiC; and
cleaning the waste SiC from which the iron component has been removed,
wherein the step of removing graphite from the cut waste SiC comprises a first oxidation step, a first quenching step, a shot blasting step, a second oxidation step, and a second quenching step.