Polishing compositions and methods of use thereof
View Patent ↗This disclosure relates to polishing compositions containing at least one abrasive, at least one organic photocatalyst, and water.
1 . A polishing composition, comprising:
at least one abrasive;
at least one organic photocatalyst, wherein the organic photocatalyst is a helical carbenium ion containing compound; and
water.
2 . The polishing composition of claim 1 , wherein the helical carbenium ion containing compound is selected from the group consisting of dimethoxyquinacridinium (DMQA+), N,N′-di-n-propyl-1,13-dimethoxyquinacridinium tetrafluoroborate, N,N′-di-n-propyl-1,13-dimethoxyquinacridinium chloride, N,N′-di-n-propyl-1,13-dimethoxyquinacridinium bromide, N,N′-di-n-propyl-1,13-dimethoxyquinacridinium iodide, N,N′-di-n-propyl-1,13-dimethoxyquinacridinium hydroxide, N,N′-di-n-propyl-1,13-dimethoxyquinacridinium sulfate, N,N′-di-n-propyl-1,13-dimethoxyquinacridinium borate, and N,N′-di-n-propyl-1,13-dimethoxyquinacridinium phosphate.
3 . The polishing composition of claim 1 , wherein the at least one abrasive is selected from the group consisting of alumina, silica, titania, ceria, zirconia, co-formed products of alumina, silica, titania, ceria, or zirconia, coated abrasives, surface modified abrasives, and mixtures thereof.
4 . The polishing composition of claim 1 , wherein the at least one abrasive is in an amount of from about 0.01% to about 50% by weight of the composition.
5 . The polishing composition of claim 1 , wherein the organic photocatalyst has an absorption max (λmax) of from about 350 nm to about 850 nm.
6 . The polishing composition of claim 1 , wherein the organic photocatalyst does not contain a transition metal.
7 . The polishing composition of claim 1 , wherein the organic photocatalyst is in an amount of from about 0.0001% to about 10% by weight of the composition.
8 . The polishing composition of claim 1 , wherein the polishing composition does not include hydrogen peroxide, orthoperiodic acid, metaperiodic acid, dimesoperiodic acid, diorthoperiodic acid, ammonium periodate, potassium periodate, sodium periodate, ammonium persulfate, iodic acid, an iodate salt, perchloric acid, a perchloroate salt, hydroxylamine, or a hydroxylamine salt.
9 . The polishing composition of claim 1 , further comprising at least one compound selected from the group consisting of pH adjusting agents, corrosion inhibitors, surfactants, chelating agents, water-soluble polymers, organic acids, organic solvents, or mixtures thereof.
10 . A method, comprising:
applying the polishing composition of claim 1 to a substrate; and
bringing a pad into contact with the surface of the substrate and moving the pad in relation to the substrate.
11 . The method of claim 10 , wherein the at least one abrasive is selected from the group consisting of alumina, silica, titania, ceria, zirconia, co-formed products of alumina, silica, titania, ceria, or zirconia, coated abrasives, surface modified abrasives, and mixtures thereof.
12 . The method of claim 10 , wherein the at least one abrasive is in an amount of from about 0.01% to about 50% by weight of the composition.
13 . The method of claim 10 , wherein the organic photocatalyst has an absorption max (λmax) of from about 350 nm to about 850 nm.
14 . The method of claim 10 , wherein the organic photocatalyst does not contain a transition metal.
15 . The method of claim 10 , wherein the organic photocatalyst is in an amount of from about 0.0001% to about 10% by weight of the composition.
16 . The method of claim 10 , wherein the polishing composition does not include hydrogen peroxide, orthoperiodic acid, metaperiodic acid, dimesoperiodic acid, diorthoperiodic acid, ammonium periodate, potassium periodate, sodium periodate, ammonium persulfate, iodic acid, an iodate salt, perchloric acid, a perchloroate salt, hydroxylamine, or a hydroxylamine salt.
17 . The method of claim 10 , further comprising at least one compound selected from the group consisting of pH adjusting agents, corrosion inhibitors, surfactants, chelating agents, water-soluble polymers, organic acids, organic solvents, or mixtures thereof.
18 . The method of claim 10 , further comprising illuminating the substrate with a light source during the moving of the pad in relation to the substrate.
19 . The method of claim 10 , further comprising forming a semiconductor device from the substrate.