IP Library Granted Patent US 12692459
Granted Patent B2
US 12692459 · App. 18/122,016 · Granted Jul 28, 2026

Composition for surface treatment, surface treatment method, and method for producing semiconductor substrate

Inventor: Tsutomu Yoshino (Aichi, JP)
Assignee: FUJIMI INCORPORATED
C11D1/83C09G1/02H10P52/403H10P95/062C11D1/008C11D1/143C11D1/76C11D2111/22
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Quick Facts
Patent No.
US 12692459
App. No.
18/122,016
Granted
Jul 28, 2026
Kind
B2
Abstract

Means capable of sufficiently removing residues remaining on a surface of a polished object containing silicon nitride and at least one selected from the group consisting of silicon oxide and polysilicon is provided. A composition for surface treatment, comprising: a nitrogen-free nonionic polymer, a nitrogen-containing nonionic polymer, and an anionic polymer, wherein the nitrogen-free nonionic polymer has a weight-average molecular weight of less than 100,000, the ratio of a weight-average molecular weight of the nitrogen-containing nonionic polymer to the weight-average molecular weight of the nitrogen-free nonionic polymer (nitrogen-containing nonionic polymer/nitrogen-free nonionic polymer) is 0.1 or more and 10 or less, and the composition for surface treatment has a pH of less than 7.0.

Claims (24)

1 . A composition for surface treatment, comprising: a nitrogen-free nonionic polymer, a nitrogen-containing nonionic polymer, and an anionic polymer, and comprising substantially no abrasive grains,

wherein the nitrogen-free nonionic polymer has a weight-average molecular weight of less than 100,000,

a ratio of a weight-average molecular weight of the nitrogen-containing nonionic polymer to the weight-average molecular weight of the nitrogen-free nonionic polymer (nitrogen-containing nonionic polymer/nitrogen-free nonionic polymer) is 0.1 or more and 8 or less, and

the composition for surface treatment has a pH of less than 7.0.

2 . The composition for surface treatment according to claim 1 , wherein the nitrogen-containing nonionic polymer has an amide bond.

3 . The composition for surface treatment according to claim 1 , wherein the nitrogen-containing nonionic polymer has a weight-average molecular weight of 80,000 or less.

4 . The composition for surface treatment according to claim 1 , wherein the nitrogen-containing nonionic polymer is one or more selected from the group consisting of polyvinylpyrrolidone, poly-N-vinylacetamide, polydimethylacrylamide, polyvinyl caprolactam, N-isopropylacrylamide, and oxazoline group-containing polymers.

5 . The composition for surface treatment according to claim 1 , wherein a ratio of a weight-average molecular weight of the nitrogen-containing nonionic polymer to a weight-average molecular weight of the nitrogen-free nonionic polymer (nitrogen-containing nonionic polymer/nitrogen-free nonionic polymer) is 0.3 or more and 6 or less.

6 . The composition for surface treatment according to claim 1 , wherein the nitrogen-free nonionic polymer is polyvinyl alcohol.

7 . The composition for surface treatment according to claim 1 , further comprising a chelating agent having two or more phosphoric acid groups.

8 . The composition for surface treatment according to claim 1 , wherein the nitrogen-free nonionic polymer is one or more selected from the group consisting of polyvinyl alcohol, polyethylene glycol, polypropylene glycol, and hydroxyethyl cellulose, and the nitrogen-containing nonionic polymer is one or more selected from the group consisting of polyvinylpyrrolidone, poly-N-vinylacetamide, polydimethylacrylamide, polyvinylcaprolactam, N-isopropylacrylamide, and oxazoline group-containing polymers.

9 . The composition for surface treatment according to claim 8 , the nitrogen-free nonionic polymer has a weight-average molecular weight of 5,500 or more and less than 100,000.

10 . The composition for surface treatment according to claim 9 , wherein the nitrogen-free nonionic polymer has a weight-average molecular weight of 5,500 or more and 50,000 or less, and wherein the nitrogen-containing nonionic polymer has a weight-average molecular weight of 5,000 or more and 100,000 or less.

11 . The composition for surface treatment according to claim 10 , wherein the pH is less than 5.

12 . The composition for surface treatment according to claim 11 , the composition for surface treatment consists of the nitrogen-free nonionic polymer, the nitrogen-containing nonionic polymer, the anionic polymer, solvent and an additive,

wherein the additive is one or more selected from the group consisting of an anionic polymer, other polymers than the nitrogen-free nonionic polymer, nitrogen-containing nonionic polymer, and anionic polymer, chelating agent, surfactant, pH adjusting agent, antifungal agent, dissolved gas, reducing agent, and oxidizing agent.

13 . The composition for surface treatment according to claim 10 , wherein the pH is less than 4.

14 . A surface treatment method, comprising surface-treating a polished object using the composition for surface treatment according to claim 1 , the polished object comprising silicon nitride and at least one selected from the group consisting of silicon oxide and polysilicon, to reduce a residue on a surface of the polished object.

15 . The surface treatment method according to claim 14 , wherein the surface treatment method is a rinse polishing treatment method or a cleaning treatment method.

16 . A method for producing a semiconductor substrate,

wherein a polished object is a polished semiconductor substrate, the method comprising:

a polishing step of polishing a semiconductor substrate before polishing using a polishing composition comprising abrasive grains, the semiconductor substrate before polishing comprising silicon nitride and at least one selected from the group consisting of silicon oxide and polysilicon, to obtain the polished semiconductor substrate; and

a surface treatment step of reducing a residue comprising the abrasive grains on a surface of the polished semiconductor substrate using the composition for surface treatment according to claim 1 .

17 . The method for producing a semiconductor substrate according to claim 16 , wherein the polishing composition has a pH of 2 or more and 6 or less.