Method for manufacturing multilayer structure

1 . A method for manufacturing a multilayer structure, the method comprising:

providing a substrate in a chamber, the substrate including a base layer and an insulating layer on the base layer, the base layer including silicon, the insulating layer including an amorphous silicon oxide;

providing a target in the chamber of a magnetron sputtering device;

allowing a target material that has been discharged from the target to be incident into the substrate by setting, in the magnetron sputtering device, an incident angle of the target material to the substrate to be about 6.45° to about 9.14° so as to form a material layer directly on the insulating layer, the material layer comprising a plurality of crystals of the material layer that have a same crystal orientation; and

forming a single crystal layer on the material layer, wherein

the target consists of magnesium oxide or beryllium oxide,

the substrate includes a substrate exposure surface, the substrate exposure surface including a first substrate portion closest to the target in a first direction and a second substrate portion farthest from the target in the first direction, the first direction being parallel to the substrate exposure surface,

the target includes a target exposure surface, the target exposure surface including a first target portion closest to the substrate in a second direction and a second target portion farthest from the substrate in the second direction, the second direction being perpendicular to the first direction,

a first incident angle of the target material emitted from the first target portion of the target exposure surface and incident into the second substrate portion of the substrate exposure surface is about 6.45° or more,

a second incident angle of the target material emitted from the second target portion of the target exposure surface and incident into the first substrate portion of the substrate exposure surface is about 9.14° or less, and

the target is provided in the chamber such that the substrate exposure surface is in the first direction and the target exposure surface is in the second direction, the substrate exposure surface and the target exposure surface are spaced apart in the first direction by a certain distance and are at different heights in the second direction to implement the first incident angle of about 6.45° or more and the second incident angle of about 9.14° or less.

2 . The method of claim 1 , wherein

the material layer comprises a first crystal and a second crystal,

first atoms of the first crystal are arranged in the first direction, and

second atoms of the second crystal are arranged in the first direction.

3 . The method of claim 2 , wherein the first crystal and the second crystal are spaced apart from each other in the first direction.

4 . The method of claim 2 , wherein the first crystal and the second crystal overlap each other in the second direction orthogonal to the substrate exposure surface.

5 . The method of claim 4 , wherein each of the first atoms of the first crystal overlaps a corresponding one of the second atoms of the second crystal in the second direction.

6 . The method of claim 2 , wherein the target and the substrate are arranged in the first direction.

7 . A method for manufacturing a multilayer structure, the method comprising:

providing a substrate in a chamber, the substrate including a base layer and an insulating layer on the base layer, the base layer including silicon, the insulating layer including an amorphous silicon oxide;

providing a target in the chamber of a magnetron sputtering device;

allowing a target material discharged from the target and incident into the substrate by setting, in the magnetron sputtering device, an incident angle of the target material to the substrate to be about 6.45° to about 9.14° so as to form a material layer directly on the insulating layer, the material layer comprising a plurality of crystals that have a same crystal orientation; and

forming a single crystal layer on the material layer, wherein

the target consists of magnesium oxide or beryllium oxide,

the substrate includes a substrate exposure surface, the substrate exposure surface including a first substrate portion closest to the target in a first direction and a second substrate portion farthest from the target in the first direction, the first direction being parallel to a surface of the substrate,

the target includes a target exposure surface, the target exposure surface including a first target portion closest to the substrate in a second direction and a second target portion farthest from the substrate in the second direction, the second direction being perpendicular to the first direction,

a first incident angle of the target material emitted from the first target portion of the target exposure surface and incident into the second substrate portion of the substrate exposure surface is about 6.45° or more,

a second incident angle of the target material emitted from the second target portion of the target exposure surface and incident into the first substrate portion of the substrate exposure surface is about 9.14° or less, and

the target is provided in the chamber such that the substrate exposure surface is in the first direction and the target exposure surface is in the second direction, the substrate exposure surface and the target exposure surface are spaced apart by a certain distance in the first direction and are at different heights in the second direction to implement the first incident angle of about 6.45° or more and the second incident angle of about 9.14° or less.

8 . The method of claim 7 , wherein forming the single crystal layer comprises epitaxially growing the single crystal layer on the material layer using the material layer as a seed layer.

9 . The method of claim 7 , wherein forming the single crystal layer comprises:

forming a poly crystal layer on the material layer; and

annealing the poly crystal layer to form the single crystal layer.

10 . The method of claim 7 , further comprising:

supplying power to a target support structure configured to support the target through a power supply.

11 . The method of claim 7 , further comprising:

supplying a gas into the chamber through a gas supply and a mass flow controller that connects the gas supply to the chamber.

12 . A method for driving a magnetron sputtering device, the method comprising:

providing a substrate on a substrate support structure within a chamber, the substrate including a base layer and an insulating layer on the base layer, the base layer including silicon, the insulating layer including an amorphous silicon oxide;

providing a target on a target support structure within the chamber of the magnetron sputtering device;

supplying a gas into the chamber;

supplying power to the target support structure and setting, in the magnetron sputtering device, an incident angle of a target material discharged from the target to the substrate to be about 6.45° to about 9.14° so that the target material is incident into the substrate so as to form a material layer directly on the insulating layer, the material layer comprising a plurality of crystals that have a same crystal orientation; and

forming a single crystal layer on the material layer, wherein

the target consists of magnesium oxide or beryllium oxide,

the substrate includes a substrate exposure surface, the substrate exposure surface including a first substrate portion closest to the target in a first direction and a second substrate portion farthest from the target in the first direction, the first direction being parallel to a surface of the substrate,

the target includes a target exposure surface, the target exposure surface including a first target portion closest to the substrate in a second direction and a second target portion farthest from the substrate in the second direction, the second direction being perpendicular to the first direction,

a first incident angle of the target material emitted from the first target portion of the target exposure surface and incident into the second substrate portion of the substrate exposure surface is about 6.45° or more,

a second incident angle of the target material emitted from the second target portion of the target exposure surface and incident into the first substrate portion of the substrate exposure surface is about 9.14° or less, and

the target is provided within the chamber such that the substrate exposure surface is in the first direction and the target exposure surface is in the second direction, the substrate exposure surface and the target exposure surface are spaced apart by a certain distance in the first direction and are at different heights in the second direction to implement the first incident angle of about 6.45° or more and the second incident angle of about 9.14° or less.

13 . The method of claim 12 , wherein

atoms of the plurality of crystals of the material layer are arranged in the first direction, and

the target support structure and the substrate support structure are arranged in the first direction.