Low temperature synthesis method of two dimensional material
A synthesis method of a 2D material according to the present disclosure includes preparing a substrate; maintaining a first zone of a furnace and a second zone adjacent to the first zone, in which the target substrate is disposed, at a first temperature and a second temperature which is lower than the first temperature; injecting carrier gas, a transition metal precursor, and a chalcogenide precursor into the first zone of the furnace; and depositing transition metal dichalcogenide on the target substrate in the second zone at the second temperature by the chemical vapor deposition.
1 . A synthesis method of a two-dimensional material, comprising:
preparing a substrate;
maintaining a first zone of a furnace and a second zone adjacent to the first zone, in which the target substrate is disposed, at a first temperature and a second temperature which is lower than the first temperature;
injecting a carrier gas, a transition metal precursor, and a chalcogenide precursor into the first zone of the furnace; and
depositing transition metal dichalcogenide on the target substrate in the second zone at the second temperature by chemical vapor deposition, thereby forming the two-dimensional material,
wherein in the injecting, a solution in which the transition metal precursor is dissolved in a chalcogenide precursor solvent is vaporized to inject the transition metal precursor and the chalcogenide precursor together, and
wherein in the injecting, the solution is bubbled with an inert gas to be vaporized.
2 . The synthesis method of the two-dimensional material according to claim 1 , wherein in the depositing, in the first zone, a chemical reaction in which the transition metal precursor and the chalcogenide precursor are decomposed occurs.
3 . The synthesis method of the two-dimensional material according to claim 2 , wherein at the first temperature, a chemical reaction in which the transition metal precursor and the chalcogenide precursor are decomposed occurs.
4 . The synthesis method of the two-dimensional material according to claim 3 , wherein the first temperature is 400° C. to 850° C.
5 . The synthesis method of the two-dimensional material according to claim 1 , wherein the second temperature is lower than a melting temperature of the target substrate while depositing the transition metal dichalcogenide on the target substrate.
6 . The synthesis method of the two-dimensional material according to claim 5 , wherein the second temperature is 100° C. to 400° C.
7 . The synthesis method of the two-dimensional material according to claim 1 , wherein the target substrate includes a glass, polyimide, parylene-C, SiO 2 , or AL 2 O 3 as a flexible base material.
8 . The synthesis method of the two-dimensional material according to claim 1 , wherein the target substrate includes a carrier base material, a buffer layer formed on the carrier base material, a flexible base material formed on the buffer layer, and a passivation layer formed on the flexible base material.
9 . The synthesis method of the two-dimensional material according to claim 8 , wherein the buffer layer is formed of graphene.
10 . The synthesis method of the two-dimensional material according to claim 1 , wherein a length of the second zone is formed to be larger than a length of the first zone.
11 . The synthesis method of the two-dimensional material according to claim 1 , wherein the target substrate includes a glass or polyimide as a flexible base material and
the second temperature is 100° C. to 400° C.
12 . The synthesis method of the two-dimensional material according to claim 1 , wherein the target substrate includes parylene-C as a flexible base material and the second temperature is 100° C. to 200° C.
13 . The synthesis method of the two-dimensional material according to claim 1 , wherein the transition metal precursor is a Mo precursor, the chalcogenide precursor is a S precursor, and the transition metal dichalcogenide is MoS 2 .
14 . The synthesis method of the two-dimensional material according to claim 13 , wherein the transition metal precursor is molybdenum hexacarbonyl (MHC).
15 . The synthesis method of the two-dimensional material according to claim 13 , wherein the chalcogenide precursor is dimethyl sulfide (DMS).
16 . The synthesis method of the two-dimensional material according to claim 1 , wherein the transition metal precursor is a Mo precursor or a W precursor, the chalcogenide precursor is a S precursor, a Se precursor, or a Te precursor, and the transition metal dichalcogenide is MoS 2 , MoSe 2 , MoTe 2 , WS 2 , WSe 2 , or WTeS 2 .