IP Library › Granted Patent US 12692596
Granted Patent B2
US 12692596 · App. 17/119,436 · Granted Jul 28, 2026

Cover ring and ground shield for physical vapor deposition chamber

Inventors: Tsung-Cheng Wu (Hsinchu, TW); Sheng-Ying Wu (Hsinchu, TW); Ming-Hsien Lin (Taichung City, TW)
Assignee: TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.
C23C16/45536C23C16/4585H01J37/32082H01J37/32449H01J37/32651
View Patent ↗
Loading inventors, assignments & file history…
Monitor This Case
Get email alerts when status or documents change.
Order Certified Copies
Most orders are placed with the USPTO same day — all within 24 business hours.
Order via The Patent Place →
Pre-filled with this patent's details
Quick Facts
Patent No.
US 12692596
App. No.
17/119,436
Granted
Jul 28, 2026
Kind
B2
Abstract

An assembly includes a cover ring having a first surface and a second surface opposite the first surface, the first surface of the cover ring having a first roughness, and a deposition ring having a first surface facing the cover ring and a second surface opposite the first surface, the first surface of the deposition ring having a second roughness. The first roughness is different from the second roughness.

Claims (42)

1 . An assembly, comprising:

a cover ring having a first surface and a second surface opposite the first surface, wherein the cover ring includes an annular shape including an inner circumferential end and an outer circumferential surface, the first surface of the cover ring includes a lip at a position proximal to the inner circumferential end, only the lip of the first surface of the cover ring is covered with a first coating having a first roughness, and the first roughness has a Ra of less than 600 micro-inches; and

a deposition ring having a first surface facing the cover ring and a second surface opposite the first surface, wherein the first surface of the deposition ring has a second roughness, the first roughness of the first coating on the lip of the first surface of the cover ring is less than the second roughness of the first surface of the deposition ring, the lip of the first surface of the cover ring has a convex shape protruding toward the first surface of the deposition ring, and portions of the cover ring other than the first coating on the lip have a third roughness that is greater than the first roughness of the first coating on the lip.

2 . The assembly of claim 1 , wherein the first surface of the deposition ring is directly below the lip on the first surface of the cover ring.

3 . The assembly of claim 1 , wherein the cover ring includes a metallic material.

4 . The assembly of claim 1 , wherein the deposition ring includes a ceramic material.

5 . The assembly of claim 1 , wherein the first coating comprises a metallic material.

6 . A processing chamber, comprising:

a target having a first surface and a second surface that is opposite the first surface;

an RF power supply coupled to the target;

a DC power supply coupled to the target;

a magnetron disposed adjacent to the second surface of the target;

a substrate support having a substrate receiving surface for securing a substrate for processing;

a ground shield;

a cover ring positioned on the ground shield, wherein the cover ring includes a first surface facing the substrate support, a second surface opposite the first surface, an annular shape including an inner circumferential end and an outer circumferential surface, and the first surface of the cover ring includes a lip at a position proximal to the inner circumferential end; and

a deposition ring disposed on the substrate support, the deposition ring having a first surface facing the cover ring and a second surface opposite the first surface,

wherein the lip of the first surface of the cover ring has a convex shape protruding toward the first surface of the deposition ring, only the lip of the first surface of the cover ring is covered with a first coating having a first roughness, the first roughness of the first coating on the lip has a Ra of less than 600 micro-inches, the first roughness of the first coating on the lip is less than a second roughness of at least a portion of the first surface of the deposition ring, and portions of the cover ring other than the first coating on the lip have a third roughness that is higher than the first roughness of the first coating on the lip.

7 . The processing chamber of claim 6 , wherein the lip of the cover ring is directly above the portion of the first surface of the deposition ring.

8 . The processing chamber of claim 6 , wherein the cover ring includes a metallic material.

9 . The processing chamber of claim 6 , wherein the deposition ring includes a ceramic material.

10 . A processing chamber, comprising:

a target having a first surface and a second surface that is opposite the first surface,

an RF power supply coupled to the target,

a DC power supply coupled to the target,

a substrate support having a substrate receiving surface for securing a substrate for processing,

a ground shield,

a cover ring positioned on the ground shield, wherein the cover ring includes a first surface facing the substrate support and a second surface opposite the first surface, the cover ring includes an annular shape including an inner circumferential end and an outer circumferential surface, the first surface of the cover ring includes a lip at a position proximal to the inner circumferential end, and

a deposition ring disposed on the substrate support, the deposition ring having a first surface facing the cover ring and a second surface opposite the first surface,

wherein the lip of the first surface of the cover ring has a convex shape protruding toward the first surface of the deposition ring,

only the lip of the first surface of the cover ring is covered with a first coating having a first roughness, the first roughness has a Ra of less than 600 micro-inches,

a portion of the first surface of the deposition ring directly opposite the lip has a second roughness, and the first roughness of the first coating on the lip of the cover ring is less than the second roughness on the first surface of the deposition ring, and

portions of the cover ring other than the first coating on the lip have a third roughness that is greater than the first roughness of the first coating on the lip.

11 . The processing chamber of claim 10 , wherein a remainder of the cover ring other than the first coating on the lip has the third roughness.

12 . The processing chamber of claim 10 , wherein the portion of the first surface of the deposition ring comprises a second coating having the second roughness.

13 . The processing chamber of claim 10 , wherein the second roughness has a Ra ranging from 600 micro-inches to 900 micro-inches.

14 . The assembly of claim 1 , wherein the second roughness has a Ra ranging from 600 micro-inches to 900 micro-inches.

15 . The processing chamber of claim 6 , wherein the second roughness has a Ra ranging from 600 micro-inches to 900 micro-inches.

16 . The processing chamber of claim 12 , wherein only the portion of the first surface of the deposition ring directly opposite the lip comprises the second coating.

17 . The assembly of claim 1 , wherein a remainder of the cover ring other than the first coating on the lip has the third roughness.

18 . The processing chamber of claim 6 , wherein a remainder of the cover ring other than the first coating on the lip has the third roughness.

19 . The assembly of claim 1 , wherein the first surface of the deposition ring comprises a second coating having the second roughness.

20 . The processing chamber of claim 6 , wherein the first surface of the deposition ring comprises a second coating having the second roughness.