Bolometer and method for manufacturing the same
A flexible and high-performance bolometer and a method for manufacturing the same are disclosed. The bolometer has (a) a light detector including a bolometer film, and (b) a resin exterior enclosing the light detector; the resin exterior including (b1) a base material layer formed of a resin having a thermal conductivity of 0.3 W/mK or less, and (b2) a protective layer formed of a resin having a thermal conductivity of 0.3 W/mK or less and an infrared transmittance of 70% or more.
1 . A bolometer comprising
(a) a light detector including a bolometer film, and
(b) a resin exterior enclosing the light detector; the resin exterior including (b1) a base material layer formed of a resin having a thermal conductivity of 0.3 W/mK or less, and (b2) a protective layer formed of a resin having a thermal conductivity of 0.3 W/mK or less and an infrared transmittance of 70% or more,
wherein the base material layer is not supported by a support formed of an inorganic or organic material.
2 . The bolometer according to claim 1 , wherein the base material layer has a thickness of 100 nm or more and 200 μm or less.
3 . The bolometer according to claim 1 , wherein the protective layer has a thickness of 10 nm or more and 100 μm or less.
4 . The bolometer according to claim 1 , wherein the base material layer and the protective layer are formed of a same resin.
5 . The bolometer according to claim 1 , wherein a resin forming the base material layer is parylene.
6 . The bolometer according to claim 1 , wherein a resin forming the base material layer and the protective layer is parylene.
7 . The bolometer according to claim 1 , wherein the bolometer film comprises semiconducting carbon nanotubes.
8 . The bolometer according to claim 1 , which has an array structure, the bolometer comprising
(a) a plurality of light detector each including a bolometer film, and
(b) a resin exterior enclosing the plurality of light detector; the resin exterior including (b1) a base material layer formed of a resin having a thermal conductivity of 0.3 W/mK or less, and (b2) a protective layer formed of a resin having a thermal conductivity of 0.3 W/mK or less and an infrared transmittance of 70% or more.
9 . The bolometer according to claim 1 , wherein the bolometer film is formed on and in direct contact with an under layer formed of silicon oxide and/or silicon nitride, and the bolometer film is covered by a light absorption film which functions as a protective film formed of silicon oxide and/or silicon nitride.
10 . A method of manufacturing a bolometer comprising:
forming a base material layer by a resin having a thermal conductivity of 0.3 W/mK or less on a support;
forming an under layer on the base material layer;
forming a bolometer film on the under layer;
forming two electrodes so as to be connected to the bolometer film to form a light detector including the bolometer film and the electrodes; and
forming a protective layer having a thermal conductivity of 0.3 W/mK or less and an infrared transmittance of 70% or more in such a manner that the protective layer covers the light detector and bonds directly to the base material layer around the light detector, whereby the base material layer and the protective layer together form a resin exterior enclosing the light detector;
forming a groove outside of the outer periphery of the light detection part to the depth of the surface of the support; and
separating from the support the light detector enclosed by the resin exterior comprising the base material layer and the protective layer.