IP Library Granted Patent US 12693179
Granted Patent B2
US 12693179 · App. 18/219,300 · Granted Jul 28, 2026

Multi-dimensional strain sensing device, method for sensing types of external motions and for forming ternary valued logic device by the same, and ternary valued logic system

Inventors: Jit Dutta (Tainan City, TW); Chuan Pu Liu (Tainan City, TW)
Assignee: NATIONAL CHENG KUNG UNIVERSITY
G01L1/16
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Quick Facts
Patent No.
US 12693179
App. No.
18/219,300
Granted
Jul 28, 2026
Kind
B2
Abstract

A multi-dimensional strain sensing device includes a flexible substrate, two piezoelectric semiconducting films, a first pair of electrodes and a second pair of electrodes. The two piezoelectric semiconducting films are formed on opposite sides of the flexible substrate respectively. The first pair of electrodes are formed on one of the two piezoelectric semiconducting films and opposite to the flexible substrate. The second pair of electrodes are formed on the other one of the two piezoelectric semiconducting films and opposite to the flexible substrate. The present disclosure further proposes a method for sensing types of external motions by the multi-dimensional strain sensing device, a method for forming a ternary valued logic device by the multi-dimensional strain sensing device and a ternary valued logic system.

Claims (23)

1 . A multi-dimensional strain sensing device, comprising:

a flexible substrate;

two piezoelectric semiconducting films, formed on opposite sides of the flexible substrate respectively, wherein a first surface of each of the two piezoelectric semiconducting films close to the flexible substrate is zinc-terminated, and a second surface of each of the two piezoelectric semiconducting films away from the flexible substrate is oxide-terminated;

a first pair of electrodes formed on the second surface of one of the two piezoelectric semiconducting films and opposite to the flexible substrate; and

a second pair of electrodes formed on the second surface of the other one of the two piezoelectric semiconducting films and opposite to the flexible substrate,

wherein each of the second surface of the one of the two piezoelectric semiconducting films and the second surface of the other one of the two piezoelectric semiconducting films is a continuous plane, and one of the first pair of electrodes is serially connected to one of the second pair of electrodes.

2 . The multi-dimensional strain sensing device according to claim 1 , wherein the flexible substrate is a mica substrate.

3 . A method for sensing types of external motions by the multi-dimensional strain sensing device according to claim 1 , comprising:

applying a voltage to one of the first pair of electrodes and one of the second pair of electrodes;

detecting amounts of currents flow through the two piezoelectric semiconducting films respectively by grounding the other one of the first and second pairs of electrodes; and

determining a sensing type of pressure, force or tactile applied to the multi-dimensional strain sensing device by comparing changes of the currents in the two piezoelectric semiconducting films.

4 . A method for forming a ternary valued logic device by the multi-dimensional strain sensing device according to claim 1 , comprising:

applying a voltage or current from an open electrode of the first pair of electrodes and grounding an open electrode of the second pair of electrodes,

wherein the open electrode applied with the voltage or current serves as an input terminal of the ternary valued logic device, the open electrode that is grounded serves as a grounded terminal of the ternary valued logic device, and the one electrode of the first pair of electrodes and the one electrode of the second pair of electrodes serve as a linked terminal of the ternary valued logic device,

wherein a response of the ternary valued logic device is obtained by measuring a voltage across the linked terminal and the grounded terminal.

5 . A ternary valued logic system, comprising:

a first sensing device which is the multi-dimensional strain sensing device according to claim 1 ; and

a second sensing device, comprising:

another flexible substrate;

other two piezoelectric semiconducting films, formed on opposite sides of the another flexible substrate respectively, wherein a first surface of each of the other two piezoelectric semiconducting films close to the flexible substrate is zinc-terminated, and a second surface of each of the other two piezoelectric semiconducting films away from the flexible substrate is oxide-terminated;

another first pair of electrodes formed on the second surface of one of the other two piezoelectric semiconducting films and opposite to the another flexible substrate; and

another second pair of electrodes formed on the second surface of the other one of the other two piezoelectric semiconducting films and opposite to the another flexible substrate,

wherein each of the second surface of the one of the other two piezoelectric semiconducting films and the second surface of the other one of the other two piezoelectric semiconducting films is a continuous plane, one electrode of the first pair of electrodes of the first sensing device is connected in series with one electrode of the another first pair of electrodes of the second sensing device, one electrode of the second pair of electrodes of the first sensing device is connected in parallel with one electrode of the another second pair of electrodes of the second sensing device, and the other electrode of the second pair of electrodes of the first sensing device and the other electrode of the another second pair of electrodes of the second sensing device are grounded.