IP Library Granted Patent US 12693245
Granted Patent B2
US 12693245 · App. 18/600,451 · Granted Jul 28, 2026

Measurement device, measurement system, and measurement method

Inventors: Yuki Abe (Kuwana, JP); Akira Hamaguchi (Yokkaichi, JP); Takaki Hashimoto (Yokohama, JP); Kazuhiro Nojima (Mie, JP); Kaori Fumita (Yokkaichi, JP)
Assignee: Kioxia Corporation
G01N23/201G01N21/4788G01N21/9501G01N23/207
View Patent ↗
Loading inventors, assignments & file history…
Monitor This Case
Get email alerts when status or documents change.
Order Certified Copies
Most orders are placed with the USPTO same day — all within 24 business hours.
Order via The Patent Place →
Pre-filled with this patent's details
Quick Facts
Patent No.
US 12693245
App. No.
18/600,451
Granted
Jul 28, 2026
Kind
B2
Abstract

A measurement device includes an X-ray irradiation section; an X-ray detection section configured to detect scattered X-rays generated from an object; and an analysis section configured to analyze diffraction images obtained through photoelectric conversion of the scattered X-rays and estimate a three-dimensional shape of the object. A recessed portion is formed in a first film from an opening portion in a second film formed on the first film. The analysis section estimates a three-dimensional shape of the object on the basis of the diffraction images acquired while an irradiation angle of the X-rays with respect to the object is changed and shape data obtained by measuring the object in advance. The shape data includes a film thickness of the second film, a neck diameter, and a bottom diameter.

Claims (58)

1 . A measurement device comprising:

an X-ray irradiation section configured to irradiate an object with X-rays;

an X-ray detection section configured to detect scattered X-rays emitted from the object through the irradiation with the X-rays; and

an analysis section configured to analyze a plurality of diffraction images obtained through photoelectric conversion of the scattered X-rays and estimate a three-dimensional shape of a measurement region of the object irradiated with the X-rays,

wherein a first film formed of a first material and a second film formed of a second material that is different from the first material are stacked in the measurement region of the object, and a recessed portion that penetrates through the second film and reaches inside of the first film is formed at a part of the measurement region,

the analysis section estimates a three-dimensional shape of the recessed portion on the basis of the plurality of diffraction images acquired while an irradiation angle of the X-rays with respect to the object is changed and shape data obtained by measuring the object in advance, and

the shape data includes a film thickness of the second film, a minimum dimension of the recessed portion inside the second film, and a dimension of the recessed portion at an interface between the first film and the second film.

2 . The measurement device according to claim 1 , wherein the shape data further includes a center profile of the recessed portion.

3 . The measurement device according to claim 1 , wherein the shape data further includes an inclination level of the recessed portion.

4 . The measurement device according to claim 1 , wherein the shape data further includes a maximum dimension of the recessed portion inside the first film.

5 . The measurement device according to claim 1 ,

wherein the X-ray irradiation section irradiates a front surface side of the object with the X-rays, and

the X-ray detection section detects the scattered X-rays on a rear surface side of the object.

6 . The measurement device according to claim 1 , wherein

the film thickness of the second film is measured by a first multi-wavelength optical measurement device that emits infrared light, and

the first multi-wavelength optical measurement device is different from the measurement device.

7 . The measurement device according to claim 1 , wherein

the minimum dimension of the recessed portion inside the second film is measured by an electron beam measurement device, and

the electron beam measurement device is different from the measurement device.

8 . The measurement device according to claim 6 , wherein the dimension of the recessed portion at the interface between the first film and the second film is measured by a second multi-wavelength optical measurement device that emits infrared light, and

the second multi-wavelength optical measurement device is different from the measurement device.

9 . A measurement system comprising:

a measurement device including

an X-ray irradiation section configured to irradiate an object with X-rays,

an X-ray detection section configured to detect scattered X-rays emitted from the object through the irradiation with the X-rays, and

an analysis section configured to analyze a plurality of diffraction images obtained through photoelectric conversion of the scattered X-rays and estimate a three-dimensional shape of a measurement region of the object irradiated with the X-rays; and

an information processing device configured to estimate, from shape data obtained by performing measurement in advance at a plurality of positions of the object, an in-plane distribution of the shape data in the object,

wherein a first film formed of a first material and a second film formed of a second material that is different from the first material are stacked in the measurement region of the object, and a recessed portion that penetrates through the second film and reaches inside of the first film is formed at a part of the measurement region,

the shape data includes at least one of a film thickness of the second film, a minimum dimension of the recessed portion inside the second film, a dimension of the recessed portion at an interface between the first film and the second film, a center profile of the recessed portion, an inclination level of the recessed portion, or a maximum dimension of the recessed portion inside the first film,

the analysis section estimates a three-dimensional shape of the recessed portion on the basis of the plurality of diffraction images acquired while an irradiation angle of the X-rays with respect to the object is changed and the shape data inputted from the information processing device, and

the information processing device extracts the shape data at a position of the measurement region from the in-plane distribution and inputs the shape data to the measurement device.

10 . The measurement system according to claim 9 ,

wherein the X-ray irradiation section irradiates a front surface side of the object with the X-rays, and

the X-ray detection section detects the scattered X-rays on a rear surface side of the object.

11 . The measurement system according to claim 9 , further comprising a first multi-wavelength optical measurement device that emits infrared light,

wherein the film thickness of the second film is measured by the first multi-wavelength optical measurement device.

12 . The measurement system according to claim 9 , further comprising an electron beam measurement device,

wherein the minimum dimension of the recessed portion inside the second film is measured by the electron beam measurement device.

13 . The measurement system according to claim 11 , further comprising a second multi-wavelength optical measurement device that emits infrared light,

wherein the dimension of the recessed portion at the interface between the first film and the second film is measured by the second multi-wavelength optical measurement device.

14 . A measurement method comprising:

detecting scattered X-rays emitted from an object through irradiation with X-rays while an irradiation angle of the X-rays with respect to the object is changed;

performing photoelectric conversion on the scattered X-rays and acquiring a plurality of diffraction images for each irradiation angle; and

estimating a three-dimensional shape of a measurement region of the object irradiated with the X-rays on the basis of the plurality of diffraction images and shape data obtained by measuring the object in advance,

wherein a first film formed of a first material and a second film formed of a second material that is different from the first material are stacked in the measurement region of the object, and a recessed portion that penetrates through the second film and reaches inside of the first film is formed at a part of the measurement region, and

the shape data includes a film thickness of the second film, a minimum dimension of the recessed portion inside the second film, and a dimension of the recessed portion at an interface between the first film and the second film.

15 . The measurement method according to claim 14 , wherein the shape data further includes a center profile of the recessed portion.

16 . The measurement method according to claim 14 , wherein the shape data further includes an inclination level of the recessed portion.

17 . The measurement method according to claim 14 , wherein the shape data further includes a maximum dimension of the recessed portion inside the first film.

18 . The measurement method according to claim 14 , further comprising:

using a first multi-wavelength optical measurement device that emits infrared light; and

measuring the film thickness of the second film by the first multi-wavelength optical measurement device.

19 . The measurement method according to claim 14 , further comprising:

using an electron beam measurement device; and

measuring the minimum dimension of the recessed portion inside the second film by the electron beam measurement device.

20 . The measurement method according to claim 18 , further comprising:

using a second multi-wavelength optical measurement device that emits infrared light; and

measuring the dimension of the recessed portion at the interface between the first film and the second film by the second multi-wavelength optical measurement device.