Semiconductor device testing apparatus and methods of testing and fabricating semiconductor device using the same

1 . A method of fabricating a semiconductor device, comprising:

disposing a first aperture on a surface of a substrate;

positioning a first ultrasonic wave receiving probe on the surface of the substrate in the first aperture;

disposing a second aperture on the surface of the substrate;

positioning a second ultrasonic wave receiving probe on the surface of the substrate in the second aperture;

transmitting an ultrasonic wave to the substrate; and

receiving a reflection ultrasonic wave, which is reflected by a portion in the substrate,

wherein the receiving of the reflection ultrasonic wave comprises one of:

receiving the reflection ultrasonic wave, which is transmitted through the first aperture, using the first ultrasonic wave receiving probe positioned on the surface of the substrate; or

receiving the reflection ultrasonic wave, which is transmitted through the second aperture, using the second ultrasonic wave receiving probe positioned on the surface of the substrate, and

wherein the first ultrasonic wave receiving probe and the second ultrasonic wave receiving probe are spaced apart from each other in a horizontal direction.

2 . The method of claim 1 , wherein the transmitting of the ultrasonic wave to the substrate comprises transmitting the ultrasonic wave in a vertical direction using an ultrasonic wave transmitting device.

3 . The method of claim 2 , wherein:

the receiving of the reflection ultrasonic wave transmitted through the first aperture comprises receiving a first reflection ultrasonic wave, which is reflected from a first internal position in the substrate, using the first ultrasonic wave receiving probe,

the receiving of the reflection ultrasonic wave transmitted through the second aperture comprises receiving a second reflection ultrasonic wave, which is reflected from a second internal position in the substrate, using the second ultrasonic wave receiving probe, and

the first internal position and the second internal position are vertically spaced apart from each other in the substrate.

4 . The method of claim 3 , wherein:

a distance between the ultrasonic wave transmitting device and the second ultrasonic wave receiving probe is larger than a distance between the ultrasonic wave transmitting device and the first ultrasonic wave receiving probe, and

the second internal position is positioned below the first internal position.

5 . The method of claim 2 , wherein the transmitting of the ultrasonic wave to the substrate comprises transmitting the ultrasonic wave from the surface of the substrate using the ultrasonic wave transmitting device.

6 . The method of claim 2 , wherein the transmitting of the ultrasonic wave to the substrate comprises transmitting the ultrasonic wave from an opposite surface of the substrate, which is opposite to the surface, using the ultrasonic wave transmitting device.

7 . A method of fabricating a semiconductor device, comprising:

transmitting an ultrasonic wave to a substrate;

disposing an ultrasonic wave receiving probe through an aperture at a first reception position on a surface of the substrate;

moving the ultrasonic wave receiving probe and disposing the moved ultrasonic wave receiving probe through an aperture at a second reception position on the surface; and

receiving a reflection ultrasonic wave, which is reflected by a portion in the substrate,

wherein the receiving of the reflection ultrasonic wave comprises one of:

receiving a first reflection ultrasonic wave at the first reception position using the ultrasonic wave receiving probe;

or

receiving a second reflection ultrasonic wave at the second reception position using the moved ultrasonic wave receiving probe, and

wherein the first reception position and the second reception position are spaced apart from each other in a horizontal direction.

8 . The method of claim 7 , wherein the ultrasonic wave is a first ultrasonic wave transmitted in a vertical direction to the substrate at a first transmission position on the substrate, and further comprising:

transmitting a second ultrasonic wave in a vertical direction to the substrate at a second transmission position on the substrate;

disposing the ultrasonic wave receiving probe through the aperture at the first reception position on a surface of the substrate;

moving the ultrasonic wave receiving probe and disposing the moved ultrasonic wave receiving probe through the aperture at the second reception position on the surface of the substrate; and

receiving an additional reflection ultrasonic wave, which is reflected by a portion in the substrate,

wherein the receiving of the additional reflection ultrasonic wave comprises one of:

receiving the additional reflection ultrasonic wave at the first reception position using the ultrasonic wave receiving probe;

and

receiving the additional reflection ultrasonic wave at the second reception position using the moved ultrasonic wave receiving probe.

9 . The method of claim 7 , wherein the receiving of the first reflection ultrasonic wave at the first reception position using the ultrasonic wave receiving probe comprises receiving the first reflection ultrasonic wave, which is reflected from a first internal position in the substrate, using the ultrasonic wave receiving probe, and

the receiving of the second reflection ultrasonic wave at the second reception position using the ultrasonic wave receiving probe comprises receiving the second reflection ultrasonic wave, which is reflected from a second internal position in the substrate, using the ultrasonic wave receiving probe.

10 . The method of claim 9 , wherein the first internal position and the second internal position are vertically spaced apart from each other in the substrate.

11 . The method of claim 10 , wherein the transmitting of the ultrasonic wave to the substrate comprises vertically transmitting the ultrasonic wave from a transmission position on the substrate toward the substrate, using an ultrasonic wave transmitting device,

a distance between the second reception position and the transmission position is larger than a distance between the first reception position and the transmission position, and

the second internal position is positioned below the first internal position.

12 . The method of claim 7 , wherein the each aperture is configured to allow the ultrasonic wave receiving probe to receive ultrasound waves only arriving at a particular angle or range of angles.

13 . A method of testing a semiconductor device, comprising:

transmitting an ultrasonic wave to a substrate; and

receiving a reflection ultrasonic wave, which is reflected by a portion in the substrate,

wherein the receiving of the reflection ultrasonic wave comprises:

disposing an aperture on a surface of the substrate; and

receiving the reflection ultrasonic wave, which is transmitted through the aperture, using an ultrasonic wave receiving probe positioned on the surface of the substrate.

14 . The method of claim 13 , wherein the aperture is a first aperture disposed at a first reception position on the surface; and further comprising:

disposing a second aperture at a second reception position on the surface;

transmitting an additional ultrasonic wave to the substrate; and

receiving an additional reflection ultrasonic wave, which is reflected by a portion in the substrate,

wherein the receiving of the additional reflection ultrasonic wave comprises:

receiving the additional reflection ultrasonic wave, which is transmitted through the second aperture, using an additional ultrasonic wave receiving probe positioned on the surface of the substrate

wherein the receiving of the reflection ultrasonic wave, which is transmitted through the first aperture, using the ultrasonic wave receiving probe comprises:

receiving the reflection ultrasonic wave, which is transmitted through the first aperture, using a first ultrasonic wave receiving probe on the first reception position; and

wherein the receiving of the additional reflection ultrasonic wave, which is transmitted through the second aperture, using the additional ultrasonic wave receiving probe comprises receiving the additional reflection ultrasonic wave, which is transmitted through the second aperture, using the additional ultrasonic wave receiving probe on the second reception position.

15 . The method of claim 14 , wherein the receiving of the reflection ultrasonic wave transmitted through the first aperture comprises receiving a first reflection ultrasonic wave, which is reflected from a first internal position in the substrate, using the ultrasonic wave receiving probe,

the receiving of the additional reflection ultrasonic wave transmitted through the second aperture comprises receiving a second reflection ultrasonic wave, which is reflected from a second internal position in the substrate, using the additional ultrasonic wave receiving probe, and

the first internal position and the second internal position are vertically spaced apart from each other in the substrate.

16 . The method of claim 13 , wherein the aperture comprises:

an inner blocking member; and

an outer blocking member provided to enclose the inner blocking member, when viewed in a plan view,

wherein an ultrasonic wave receiving hole is provided between the inner blocking member and the outer blocking member.

17 . The method of claim 13 , wherein the transmitting of the ultrasonic wave to the substrate comprises transmitting the ultrasonic wave from the surface of the substrate into the substrate using an ultrasonic wave transmitting device.

18 . The method of claim 13 , wherein the transmitting of the ultrasonic wave to the substrate comprises transmitting the ultrasonic wave from an opposite surface of the substrate, which is opposite to the surface, into the substrate using an ultrasonic wave transmitting device.