Devices and methods for detection of viruses from exhaled breath
Described herein is a sensor comprising a doped silicon layer, a graphene layer on the doped silicon layer, a molecularly imprinted polymer (MIP) layer on the graphene layer, and electrodes in operative arrangement with the MIP layer and configured to provide a signal indicative of resistance. The MIP layer is derived from a MIP monomer and functional monomer. Also described herein is a detector comprising a sensor described herein as well as methods of making and using the sensors and detectors, e.g., to detect an analyte, such as a virus.
1 . A sensor, comprising:
a doped silicon layer having an etched surface;
a graphene layer directly on the etched surface of the doped silicon layer;
a molecularly imprinted polymer (MIP) layer derived from a MIP monomer and functional monomer, the MIP layer disposed on the graphene layer; and
electrodes in operative arrangement with the MIP layer, and said electrodes configured to provide a signal indicative of a resistance of the sensor.
2 . The sensor of claim 1 , wherein the graphene layer comprises graphene and potassium ferrocyanide.
3 . The sensor of claim 1 , wherein the MIP monomer is pyrrole.
4 . The sensor of claim 1 , wherein the functional monomer is methacrylic acid or dopamine, or a salt thereof, or a combination of any of the foregoing.
5 . The sensor of claim 1 , wherein the MIP layer is further derived from a cross-linking monomer.
6 . The sensor of claim 5 , wherein the cross-linking monomer is ethylene glycol dimethacrylate (EGDMA).
7 . The sensor of claim 1 , wherein:
the graphene layer directly on the etched surface comprises graphene and potassium ferrocyanide; and
the MIP layer comprises poly(pyrrole-co-EGDMA-co-methacrylic acid) or poly(pyrrole-co-dopamine).
8 . The sensor of claim 1 , wherein the MIP layer is selective for one or more analytes.
9 . The sensor of claim 8 , wherein the one or more analytes is in gas or aerosol form.
10 . The sensor of claim 8 , wherein the one or more analytes is a receptor-binding domain of a virus.
11 . The sensor of claim 8 , wherein the one or more analytes is a glycoprotein.
12 . The sensor of claim 11 , wherein the glycoprotein is a glycosylated spike protein.
13 . The sensor of claim 10 , wherein the virus is SARS-COV-2.
14 . The sensor of claim 8 , wherein the one or more analytes is SARS-CoV-2.
15 . The sensor of claim 8 , wherein the one or more analytes is associated with COVID-19.
16 . A detector comprising:
a sensor of claim 1 ; and
a voltage source configured to apply a voltage to the MIP layer.
17 . The detector of claim 16 , further comprising an ohmmeter in operative arrangement with the electrodes and configured to output a measurement of the resistance.
18 . A method of detecting an analyte in a sample, comprising:
measuring the resistance of a sensor of claim 1 that is in contact with the sample to obtain a measured resistance, wherein:
the sensor is selective for the analyte; and
the measured resistance is indicative of presence or absence of the analyte in the sample.
19 . A method of detecting a viral infection in a subject, comprising:
measuring the resistance of a sensor of claim 1 that is in contact with a sample from a subject to obtain a measured resistance, wherein:
the sensor is selective for an analyte associated with the viral infection; and
the measured resistance is indicative of presence or absence of the viral infection in the subject.
20 . A method of fabricating a sensor, comprising:
etching a surface of a doped silicon layer;
forming a graphene layer directly on the etched surface of the doped silicon layer; and
forming a MIP layer derived from a MIP monomer and functional monomer on the graphene layer, comprising the steps of:
incubating the functional monomer with a template molecule under conditions suitable to establish an interaction between the functional monomer and the template molecule, thereby forming a pre-polymerization complex;
polymerizing the pre-polymerization complex and the MIP monomer; and
removing the template molecule from the MIP layer.
21 . The sensor of claim 1 , wherein the doped silicon layer has a doping level greater than 10 20 m −3 .