IP Library › Granted Patent US 12693389
Granted Patent B2
US 12693389 · App. 17/783,685 · Granted Jul 28, 2026

Light detection device and method for driving photosensor

Inventors: Akihiro Shimada (Hamamatsu, JP); Mitsuhito Mase (Hamamatsu, JP); Jun Hiramitsu (Hamamatsu, JP)
Assignee: HAMAMATSU PHOTONICS K.K.
G01S7/4863G01S17/89H04N25/771H04N25/78H04N25/532H04N25/705
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Quick Facts
Patent No.
US 12693389
App. No.
17/783,685
Granted
Jul 28, 2026
Kind
B2
Abstract

In a light detection device, a control unit performs a first charge transfer process for transferring charge generated in a charge generation region to a charge storage region by applying an electric potential to a transfer gate electrode so that a potential energy of a region immediately below the transfer gate electrode is lower than a potential energy of the charge generation region and a first read process for reading an amount of charge stored in the charge storage region. In the first charge transfer process, the control unit applies an electric potential to an overflow gate electrode so that a potential energy of a region immediately below the overflow gate electrode is lower than the potential energy of the charge generation region.

Claims (29)

1 . A light detection device, comprising:

a photosensor; and

a control unit that controls the photosensor,

wherein the photosensor includes a charge generation region that generates charge in response to incident light, a charge storage region, an overflow region, a transfer gate electrode arranged on a region between the charge generation region and the charge storage region, and an overflow gate electrode arranged on a region between the charge storage region and the overflow region,

the control unit performs a first charge transfer process, which is for transferring charge generated in the charge generation region to the charge storage region by applying an electric potential to the transfer gate electrode so that a potential energy of a region immediately below the transfer gate electrode is lower than a potential energy of the charge generation region, and a first read process, which is for reading an amount of charge stored in the charge storage region after the first charge transfer process, and

in the first charge transfer process, an electric potential is applied to the overflow gate electrode so that a potential energy of a region immediately below the overflow gate electrode is lower than the potential energy of the charge generation region and higher than the potential energy of the region immediately below the transfer gate electrode.

2 . The light detection device according to claim 1 ,

wherein the control unit performs the first read process after performing the first charge transfer process multiple times.

3 . The light detection device according to claim 1 ,

wherein the charge generation region includes an avalanche multiplication region.

4 . The light detection device according to claim 1 ,

wherein the control unit performs a second charge transfer process, which is for transferring the charge stored in the charge storage region to the overflow region by applying an electric potential to the overflow gate electrode so that the potential energy of the region immediately below the overflow gate electrode is reduced after the first read process, and a second read process, which is for reading a total amount of charge stored in the charge storage region and the overflow region after the second charge transfer process.

5 . The light detection device according to claim 1 ,

wherein the photosensor further includes an unnecessary charge discharge region and an unnecessary charge transfer gate electrode arranged on a region between the charge generation region and the unnecessary charge discharge region, and

the control unit performs an unnecessary charge transfer process for transferring the charge generated in the charge generation region to the unnecessary charge discharge region by applying an electric potential to the unnecessary charge transfer gate electrode so that a potential energy of a region immediately below the unnecessary charge transfer gate electrode is lower than the potential energy of the charge generation region in a period other than a period during which the first charge transfer process is performed.

6 . The light detection device according to claim 1 , further comprising:

a light source that emits detection light,

wherein the control unit performs the first charge transfer process in a period during which reflected light of the detection light on an object is incident on the charge generation region.

7 . The light detection device according to claim 1 , further comprising:

a photogate electrode arranged on the charge generation region,

wherein, in the first charge transfer process, the control unit applies an electric potential to the photogate electrode and the overflow gate electrode so that the potential energy of the region immediately below the transfer gate electrode is lower than the potential energy of the charge generation region and the potential energy of the region immediately below the overflow gate electrode is lower than the potential energy of the charge generation region.

8 . The light detection device according to claim 1 ,

wherein the overflow region has a charge storage capacity larger than a charge storage capacity of the charge storage region.

9 . A method for driving a photosensor,

wherein the photosensor includes a charge generation region that generates charge in response to incident light, a charge storage region, an overflow region, a transfer gate electrode arranged on a region between the charge generation region and the charge storage region, and an overflow gate electrode arranged on a region between the charge storage region and the overflow region,

the method for driving the photosensor comprises:

a charge transfer step for transferring charge generated in the charge generation region to the charge storage region by applying an electric potential to the transfer gate electrode so that a potential energy of a region immediately below the transfer gate electrode is lower than a potential energy of the charge generation region; and

a read step for reading an amount of charge stored in the charge storage region after the charge transfer step, and

in the charge transfer step, an electric potential is applied to the overflow gate electrode so that a potential energy of a region immediately below the overflow gate electrode is lower than the potential energy of the charge generation region and higher than the potential energy of the region immediately below the transfer gate electrode.