IP Library Granted Patent US 12693471
Granted Patent B2
US 12693471 · App. 18/325,219 · Granted Jul 28, 2026

Photonic package and method for forming the same

Inventors: Kuo-Hao Lee (Hsinchu, TW); Xin-Hua Huang (Changhua County, TW); Jung-Kuo Tu (Hsinchu City, TW); Kejun Xia (Hsinchu City, TW); Tse-En Chang (Hsinchu City, TW)
Assignee: TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY LTD.
G02B6/124G02B6/34G02B6/4204G02B6/4215G02B6/4274G02B6/428G02B6/4283G02B2006/12107G02B6/30G02B6/4214
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Quick Facts
Patent No.
US 12693471
App. No.
18/325,219
Granted
Jul 28, 2026
Kind
B2
Abstract

A photonic package includes an optical die and an electronic die. The optical die has a first side and a second side opposite to the first side. The optical die includes a first grating coupler, a second grating coupler separated from the first grating coupler and an interconnect structure disposed over the first side. The first grating coupler includes a plurality of first segments disposed over the first side, and the second grating coupler includes a plurality of second segments disposed over the first side. The first segments and the second segments include a same material. The interconnect structure is disposed between the electronic die and the optical die. The optical die and the electronic die are electrically connected to each other through the interconnect structure. The first segments are in contact with the interconnect structure, and the second segments are separated from the interconnect structure.

Claims (43)

1 . A method for forming a photonic package, comprising:

receiving a substrate having a first region and a second region;

forming a plurality of first trenches in the first region and a second trench in the second region, wherein a width of the second trench is greater than a width of each first trench;

forming a plurality of first insulating segments in the first trenches and an insulating structure in the second trench;

removing portions of the insulating structure to form a third trench in the second region and a plurality of second insulating segments in the third trench;

forming a semiconductor structure covering the second insulating segments, wherein the second insulating segments are separated from each other by the semiconductor structure; and

forming at least a photonic component in the substrate.

2 . The method of claim 1 , wherein the substrate comprises an insulating layer and a semiconductor layer disposed over the insulating layer.

3 . The method of claim 2 , wherein the insulating layer is exposed through a bottom of the second trench.

4 . The method of claim 1 , further comprising forming an interconnect structure over the substrate to form an optical die.

5 . The method of claim 4 , further comprising bonding an electronic die to the optical die.

6 . A method for forming a photonic package, comprising:

receiving a substrate having a first region and a second region;

forming a plurality of first insulating segments in the first region;

forming a plurality of second insulating segments in the second region;

forming a semiconductor structure coupled to top surfaces of the second insulating segments, wherein the second insulating segments are separated from each other by the semiconductor structure;

forming an insulating layer over the semiconductor structure and the first insulating segments, wherein a bottom surface of the insulating layer is coupled to a top surface of the semiconductor structure and top surfaces of the first insulating segments;

forming at least a photonic component in the substrate.

7 . The method of claim 6 , wherein the forming of the first insulating segments comprises:

forming a plurality of first trenches in the first region;

filling the first trenches with an insulating material; and

performing a planarization operation to remove excess insulating material to form the first insulating segments.

8 . The method of claim 6 , wherein the top surfaces of the second insulating segments are lower than the top surfaces of the first insulating segments.

9 . The method of claim 6 , wherein the top surface of the semiconductor structure is aligned with the top surfaces of the first insulating segments.

10 . The method of claim 6 , further comprising forming an interconnect structure over the substrate to form an optical die.

11 . The method of claim 10 , further comprising forming a redistribution structure over the interconnect structure.

12 . The method of claim 10 , further comprising bonding an electronic die to the optical die.

13 . The method of claim 12 , further comprising forming a dielectric material over the optical die, wherein a top surface of the dielectric material is aligned with a top surface of the optical die.

14 . The method of claim 13 , further comprising attaching the dielectric material and the electrical die to a support substrate.

15 . The method of claim 14 , further comprising forming a lens over a surface of the support substrate opposite to the electronic die and the dielectric material.

16 . A method for forming a photonic package, comprising:

receiving a substrate having a first region and a second region;

forming a plurality of first insulating segments in the first region;

forming a plurality of second insulating segments in the second region, wherein top surfaces of the first insulating segments are higher than top surfaces of the second insulating segments, and bottom surfaces of the first insulating segments are lower than the top surfaces of the second insulating segments;

forming a semiconductor structure covering the second insulating segments, wherein the top surfaces of the first insulating segments are aligned with a top surface of the semiconductor structure;

forming at least a photonic component in the substrate.

17 . The method of claim 16 , wherein the forming of the second insulating segments comprises:

forming a trench in the second region;

filling the trench with an insulating material; and

patterning the insulating material to form the second insulating segments.

18 . The method of claim 16 , wherein the substrate comprises a semiconductor layer and an insulating layer.

19 . The method of claim 18 , wherein the first insulating segments are separated from the insulating layer by the semiconductor layer.

20 . The method of claim 18 , wherein the second insulating segments are coupled to the insulating layer.