Method for fabricating photomask layout and method for fabricating of semiconductor device using the same

1 . A method for fabricating a photomask layout, comprising:

receiving a first layout of the photomask layout, the first layout including a main pattern;

generating a second layout by generating an assist feature in consideration of optical properties of the main pattern in the first layout;

generating a third layout by performing optical proximity correction on the second layout;

generating a photomask including at least a first layer, a second layer on the first layer, and a third layer on the second layer by using the third layout;

generating an after-development inspection (ADI) image of the first layer;

generating an after-cleaning inspection (ACI) image of the second layer;

generating an ACI image of the third layer;

adjusting a size of the assist feature based on the assist feature being generated based on the ACI image of the third layer; and

outputting the third layout as a corrected layout based on the assist feature not being generated on an ACI image of a semiconductor film etched using the photomask, the photomask being generated using the third layout as an etching mask.

2 . The method for fabricating the photomask layout of claim 1 , wherein the assist feature is generated on an ADI image of the photomask generated using the third layout.

3 . The method for fabricating the photomask layout of claim 1 , further comprising:

adjusting the second layout by reducing a size of the assist feature based on the assist feature being generated on the ACI image of the semiconductor film.

4 . The method for fabricating the photomask layout of claim 1 , further comprising:

adjusting the second layout by changing a shape of the assist feature based on the assist feature being generated on the ACI image of the semiconductor film.

5 . The method for fabricating the photomask layout of claim 1 , wherein the optical properties include at least one of a normalized image log slope or a mask error enhancement factor.

6 . The method for fabricating the photomask layout of claim 1 , wherein

the first layout includes a unit block edge region and a unit block center region,

the unit block center region including the main pattern, and

the assist feature is generated in the unit block edge region.

7 . The method for fabricating the photomask layout of claim 1 , wherein the generating the second layout by generating the assist feature is performed by a machine learning model.

8 . The method for fabricating the photomask layout of claim 1 , wherein the corrected layout is generated by further considering at least one of a thickness of the photomask or an aspect ratio of the photomask.

9 . A method for fabricating a photomask layout, comprising:

receiving a first layout including a unit block center region and a unit block edge region;

determining a size and a location of an assist feature in the unit block edge region;

generating a second layout by generating a sub-pattern having the determined size in the determined location;

generating a third layout by performing optical proximity correction on the second layout;

generating a photomask including at least a first layer, a second layer on the first layer, and a third layer on the second layer by using the third layout;

generating an after-development inspection (ADI) image of the first layer;

generating an after-cleaning inspection (ACI) image of the second layer;

generating an ACI image of the third layer; and

adjusting the size of the assist feature based on the assist feature being generated based on the ACI image of the third layer.

10 . The method for fabricating the photomask layout of claim 9 , wherein the first layout includes a main pattern in the unit block center region; and

the determining of the location of the assist feature includes determining the location of the assist feature in consideration of optical properties of the main pattern.

11 . The method for fabricating the photomask layout of claim 10 , wherein the optical properties include at least one of a normalized image log slope or a mask error enhancement factor.

12 . The method for fabricating the photomask layout of claim 9 , wherein the determining of the size and the location of the assist feature in the unit block edge region of the first layout is performed by a machine learning model.

13 . The method for fabricating the photomask layout of claim 9 , further comprising:

generating an ADI image of the photomask using the third layout;

generating an ACI image of a semiconductor film etched using the photomask as an etching mask; and

adjusting the assist feature based on the ADI image of the photomask and the ACI image of the semiconductor film.

14 . The method for fabricating the photomask layout of claim 13 , wherein the adjusting the assist feature based on the ADI image of the photomask and the ACI image of the semiconductor film comprises:

reducing the size of the assist feature based on the assist feature being generated on the ACI image of the semiconductor film.

15 . The method for fabricating the photomask layout of claim 13 , wherein the adjusting the assist feature based on the ADI image of the photomask and the ACI image of the semiconductor film comprises:

changing a shape of the assist feature based on the assist feature being generated on the ACI image of the semiconductor film.

16 . The method for fabricating the photomask layout of claim 13 , wherein generating the ADI image of the photomask and generating the ACI image of the semiconductor film comprises:

generating the photomask using a 3D simulation.

17 . The method for fabricating the photomask layout of claim 16 , wherein generating the photomask comprise:

generating the photomask with a set thickness and a set material.

18 . A method for manufacturing a semiconductor device, comprising:

receiving a first layout including a main pattern;

generating a second layout by generating an assist feature around the main pattern in consideration of optical properties of the main pattern;

generating a third layout by performing optical proximity correction on the second layout;

generating a photomask including at least a first layer, a second layer on the first layer, and a third layer on the second layer by using the third layout;

generating an after-development inspection (ADI) image of the first layer;

generating an after-cleaning inspection (ACI) image of the second layer;

generating an ACI image of the third layer;

generating, via a simulation, an ADI image of the photomask generated using the third layout and an ACI image of a semiconductor film etched using the photomask as an etching mask;

generating a corrected layout by adjusting at least one of a size or a shape of the assist feature of the third layout based on the assist feature being generated on the ACI image of the third layer;

generating the photomask using the corrected layout; and

forming the semiconductor device using the photomask.

19 . The method for manufacturing the semiconductor device of claim 18 , wherein the photomask is generated based on the assist feature being generated on the ADI image of the photomask and not being generated on the ACI image of the semiconductor film.