IP Library Granted Patent US 12694826
Granted Patent B2
US 12694826 · App. 18/724,736 · Granted Jul 28, 2026

Pixel group, array substrate, and display panel

Inventors: Zhichong Wang (Beijing, CN); Jing Feng (Beijing, CN); Peng Liu (Beijing, CN)
Assignee: BOE TECHNOLOGY GROUP CO., LTD.
G09G3/3233G09G2300/0426G09G2300/0804G09G2300/0819G09G2300/0852G09G2300/0861G09G2310/08G09G2320/0233
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Quick Facts
Patent No.
US 12694826
App. No.
18/724,736
Granted
Jul 28, 2026
Kind
B2
Abstract

A pixel group includes a plurality of pixel circuits and a compensation circuit; where each of the pixel circuits is connected to the compensation circuit; each of the pixel circuits includes a driving transistor; the compensation circuit includes a third transistor; and the compensation circuit is capable of loading a threshold voltage of the third transistor to a control end of the driving transistor; and a channel region of the third transistor has a width to length ratio of a3, a channel region of the driving transistor has a width to length ratio of a1, and a3/a1 is in a range of 1-1.05.

Claims (58)

1 . An array substrate, comprising:

a substrate;

an active semiconductor layer, located at a side of the substrate, and comprising an active layer of a plurality of pixel groups, wherein the pixel group comprises a plurality of pixel circuits and a compensation circuit; each of the pixel circuits is connected to the compensation circuit; wherein

each of the pixel circuits comprises a driving transistor;

the compensation circuit comprises a third transistor; the compensation circuit is capable of loading a threshold voltage of the third transistor to a control end of the driving transistor;

a channel region of the third transistor has a width to length ratio of a3, a channel region of the driving transistor has a width to length ratio of a1, and a3/a1 is in a range of 1-1.05;

each of the pixel circuits further comprises:

a data writing circuit, connected to a scanning signal end, a data signal end and a first node, and configured to provide, under control of a scanning signal from the scanning signal end, a data signal from the data signal end to the first node; and

a storage capacitor, connected to a third node and the first node, and configured to store a voltage difference between the third node and the first node; and

the compensation circuit further comprises a voltage regulator circuit connected to a first power supply voltage end and the third node, a first electrode of the third transistor is connected to the first power supply voltage end, the voltage regulator circuit comprises a first capacitor, and the first capacitor is connected to the first power supply voltage end and the third node; and

a first conductive layer, located at a side of the active semiconductor layer away from the substrate; wherein

the active semiconductor layer comprises a plurality of first semiconductor portion groups and a second semiconductor portion located between any two adjacent ones of the first semiconductor portion groups;

the first semiconductor portion group comprises a plurality of second semiconductor sub-portions, wherein the second semiconductor sub-portion comprises an active layer of the driving transistor;

the second semiconductor portion comprises an active layer of the third transistor; and

the first conductive layer comprises a first plate of the storage capacitor and a first plate of the first capacitor, wherein the first plate of the first capacitor has a greater length in a row direction than in a column direction.

2 . The array substrate according to claim 1 , wherein in the plurality of pixel groups, at least two of the pixel groups comprise different numbers of the pixel circuits;

the pixel group comprises the plurality of pixel circuits arranged in a plurality of rows and columns; and in the plurality of pixel groups, the pixel groups comprise a same number of rows of the pixel circuits, and at least two of the pixel groups comprise different numbers of columns of the pixel circuits;

the array substrate further comprises a plurality of rows of row units, wherein more than one of the pixel groups are arranged along the row direction to form one of the row units; and in the row unit, two adjacent ones of the pixel groups comprise different numbers of columns of the pixel circuits; or

the pixel group comprises the plurality of pixel circuits arranged in the plurality of rows and columns, and the compensation circuit is located between any two adjacent rows of the pixel circuits.

3 . An array substrate, comprising:

a substrate;

an active semiconductor layer, located at a side of the substrate, and comprising an active layer of at least one pixel group, wherein the pixel group comprises a plurality of pixel circuits and a compensation circuit, each of the pixel circuits is connected to the compensation circuit; each of the pixel circuits comprises a driving transistor, the compensation circuit comprises a third transistor; and the compensation circuit is capable of loading a threshold voltage of the third transistor to a control end of the driving transistor; wherein

each of the pixel circuits further comprises:

a data writing circuit, connected to a scanning signal end, a data signal end and a first node, and configured to provide, under control of a scanning signal from the scanning signal end, a data signal from the data signal end to the first node; and

a storage capacitor, connected to a third node and the first node, and configured to store a voltage difference between the third node and the first node; and

the compensation circuit further comprises a voltage regulator circuit connected to a first power supply voltage end and the third node, a first electrode of the third transistor is connected to the first power supply voltage end, the voltage regulator circuit comprises a first capacitor, and the first capacitor is connected to the first power supply voltage end and the third node; and

a first conductive layer, located at a side of the active semiconductor layer away from the substrate; wherein

the active semiconductor layer comprises a plurality of first semiconductor portion groups and a second semiconductor portion located between any two adjacent ones of the first semiconductor portion groups;

the first semiconductor portion group comprises a plurality of second semiconductor sub-portions, wherein the second semiconductor sub-portion comprises an active layer of the driving transistor;

the second semiconductor portion comprises an active layer of the third transistor; and

the first conductive layer comprises a first plate of the storage capacitor and a first plate of the first capacitor, wherein the first plate of the first capacitor has a greater length in a row direction than in a column direction.

4 . The array substrate according to claim 3 , wherein the data writing circuit comprises a fourth transistor, a gate of the fourth transistor is connected to the scanning signal end, a first electrode of the fourth transistor is connected to the data signal end, and a second electrode of the fourth transistor is connected to the first node;

the compensation circuit comprises: a second transistor, connected to a compensation switch control signal end, a fourth node and the third node, and configured to conduct the third node and the fourth node under control of a compensation switch control signal from the compensation switch control signal end;

the pixel group further comprises: a first reset circuit, connected to a first reset control signal end, a first reset voltage end and the third node, and configured to reset the third node by providing, under control of a first reset control signal from the first reset control signal end, a first reset voltage from the first reset voltage end to the third node, wherein the first reset circuit comprises a fifth transistor, a gate of the fifth transistor is connected to the first reset control signal end, a first electrode of the fifth transistor is connected to the first reset voltage end, and a second electrode of the fifth transistor is connected to the third node; and

the first semiconductor portion group further comprises an active layer of the fourth transistor; the second semiconductor portion further comprises an active layer of the second transistor, and an active layer of the fifth transistor; and the active layer of the third transistor, the active layer of the second transistor, and the active layer of the fifth transistor are sequentially arranged along the row direction.

5 . The array substrate according to claim 4 , further comprising:

a second conductive layer, located at a side of the first conductive layer away from the substrate, wherein the second conductive layer comprises second plates of a plurality of storage capacitors, and the second plates of the plurality of storage capacitors comprised in a single one of the at least one pixel group form an integrated structure; wherein

in two adjacent pixel groups of the at least one pixel group, the second plates of the plurality of storage capacitors comprised in one of the pixel groups are separated from and disconnected with the second plates of the plurality of storage capacitors comprised in another one of the pixel groups.

6 . The array substrate according to claim 5 , further comprising a first power supply voltage line extending along the row direction; wherein

the first power supply voltage line is connected to the first plate of the first capacitor;

a second electrode region of the active layer of the second transistor is electrically connected to the second plate of the storage capacitor, and the second plate of the storage capacitor is electrically connected to a second plate of the first capacitor;

the second electrode region of the second transistor is electrically connected to the second plate of the storage capacitor via a first adapter portion;

the second plate of the storage capacitor is electrically connected to the second plate of the first capacitor via a second adapter portion; and

the first adapter portion and the second adapter portion are provided in a same layer.

7 . The array substrate according to claim 6 , wherein the first adapter portion and the second adapter portion extend along the column direction;

the array substrate further comprises a reset voltage line extending along the row direction, wherein the reset voltage line and the first power supply voltage line are provided in a same layer, and orthographic projections, on the substrate, of the reset voltage line and the first power supply voltage line are located between orthographic projections, on the substrate, of two adjacent rows of the second plates of the storage capacitors;

an orthographic projection of the first adapter portion on the substrate is at least partially overlapped with the orthographic projections, on the substrate, of the reset voltage line and the first power supply voltage line; and

an orthographic projection of the second adapter portion on the substrate is at least partially overlapped with the orthographic projections, on the substrate, of the reset voltage line and the first power supply voltage line.

8 . The array substrate according to claim 7 , wherein the first power supply voltage line and the reset voltage line are distributed in the second conductive layer; and the array substrate further comprises: a third conductive layer, located at a side of the second conductive layer away from the substrate; wherein the first adapter portion and the second adapter portion are distributed in the third conductive layer;

the first adapter portion and the second adapter portion are distributed in the second conductive layer, and the second adapter portion and the second plate of the first capacitor form an integrated structure; and the array substrate further comprises: a third conductive layer, located at a side of the second conductive layer away from the substrate, wherein the first power supply voltage line and the reset voltage line are distributed in the third conductive layer; or

the first adapter portion and the first power supply voltage line are provided in different layers.

9 . The array substrate according to claim 8 , further comprising:

a fourth conductive layer, located at a side of the third conductive layer away from the substrate, wherein the fourth conductive layer comprises a plurality of data signal lines extending along the column direction.

10 . The array substrate according to claim 3 , wherein

the first node is connected to the control end of the driving transistor, and the driving transistor is configured to output, under control of the first node, a driving current to a light-emitting device; the driving transistor is connected to the first node, a second node and a fifth node, and the light-emitting device is connected to the fifth node; the pixel group is connected to a second reset circuit and a light-emitting control circuit; the second reset circuit is connected to a second reset control signal end, a second reset voltage end and the second node, and is configured to reset the second node by providing, under control of a second reset control signal from the second reset control signal end, a second reset voltage from the second reset voltage end to the second node; and the light-emitting control circuit is connected to a light-emitting control signal end, the first power supply voltage end and the second node, and is configured to provide, under control of a light-emitting control signal from the light-emitting control signal end, a first power supply voltage from the first power supply voltage end to the second node;

the second reset circuit comprises a sixth transistor, wherein a gate of the sixth transistor is connected to the second reset control signal end, a first electrode of the sixth transistor is connected to the second reset voltage end, and a second electrode of the sixth transistor is connected to the second node; and the light-emitting control circuit comprises a seventh transistor, wherein a gate of the seventh transistor is connected to the light-emitting control signal end, a first electrode of the seventh transistor is connected to the first power supply voltage end, and a second electrode of the seventh transistor is connected to the second node; and

the substrate comprises a display area and a non-display area located at a periphery of the display area; and orthographic projections, on the substrate, of the driving transistor, the second transistor, the third transistor, the fourth transistor, and the fifth transistor are located in the display area; and orthographic projections, on the substrate, of the sixth transistor and the seventh transistor are located in the non-display area.

11 . A display panel, comprising the array substrate according to claim 1 .