Magnetic memory and manufacturing method using field line and bit line construction
According to one embodiment, a magnetic memory includes first magnetic members extending in a first direction, first wirings extending in a second direction and spaced from each other in a third direction, and a second magnetic member. The second magnetic member has a first portion above the first wirings, a second portion extending in the second direction between adjacent first wirings, a third portion below the plurality of first wirings, and a fourth portion with a part inside an upper end portion of a first magnetic member. A third wiring extends in the third direction and is connected to lower end portions of first magnetic members.
1 . A magnetic memory, comprising:
a plurality of first magnetic members, each extending in a first direction and having a first end portion and a second end portion;
a plurality of first wirings extending in a second direction intersecting the first direction and spaced from each other in a third direction intersecting the first and second directions, the second end portion of one of the plurality of first magnetic members being between adjacent first wirings in plan view from the first direction;
a second magnetic member including a first portion above the plurality of first wirings in the first direction, a second portion extending in the second direction between adjacent first wirings and electrically coupled to the first portion, a third portion below the plurality of first wirings in the first direction, and a fourth portion with a part inside the second end portion of the one of the plurality of first magnetic members and electrically coupled to the second portion; and
a third wiring extending in the third direction and electrically coupled to the first end portions of at least one of the plurality of first magnetic members.
2 . The magnetic memory according to claim 1 , wherein the second portion faces the side surfaces of adjacent first wirings and extends in the second direction in parallel with the adjacent first wirings.
3 . The magnetic memory according to claim 1 , wherein
the first portion faces upper surfaces of the plurality of first wirings,
the third portion faces bottom surfaces of the plurality of first wirings and has a portion surrounding the second end portions of the first magnetic members, and
the fourth portion has a pole shape extending in the first direction.
4 . The magnetic memory according to claim 1 , wherein the first portion has a plate shape and extends in the second and third directions.
5 . The magnetic memory according to claim 1 , wherein the third portion has a plate shape and extends in the second and third directions, the third portion further including holes therein in positions corresponding to the second end portions of the plurality of first magnetic members.
6 . The magnetic memory according to claim 1 , wherein
the plurality of first wirings and the second portion are alternately disposed in the third direction.
7 . The magnetic memory according to claim 1 , wherein a distance between the third portion and the fourth portion is less than a distance between the third portion and the second portion.
8 . The magnetic memory according to claim 1 , wherein the second portion is electrically coupled to the fourth portion.
9 . The magnetic memory according to claim 1 , wherein the third portion is electrically separated from the first portion.
10 . The magnetic memory according to claim 1 , further comprising:
a plurality of magnetoresistive elements each having a first end electrically coupled to one of the first end portions of the plurality of first magnetic members.
11 . The magnetic memory according to claim 10 , further comprising:
a switching element between one of the plurality of magnetoresistive elements and the third wiring.
12 . A magnetic memory, comprising:
a plurality of magnetic cylinders extending in a first direction and arrayed in columns along a second direction and rows along a third direction;
a plurality of field lines extending in the second direction and spaced from one another in the third direction;
a magnetic yoke including a first portion above the field lines in the first direction, a second portion extending in the second direction between adjacent field lines, a third portion below the plurality of field lines in the first direction, and a plurality of fourth portions, each fourth portion having a part inside an upper end portion of one of the plurality of magnetic cylinders, the fourth portions being electrically coupled to the second portion; and
a plurality of bit lines extending in the third direction and spaced from one another in the second direction, each magnetic cylinder having a lower end electrically coupled to one of the plurality of bit lines.
13 . The magnetic memory according to claim 12 , wherein the plurality of field lines and the second portion are alternately disposed in the third direction.
14 . The magnetic memory according to claim 12 , wherein the third portion is electrically separated from the first portion.
15 . The magnetic memory according to claim 12 , further comprising:
a plurality of magnetoresistive elements each having a first end electrically coupled to one of the lower end portions of the plurality of magnetic cylinders.
16 . The magnetic memory according to claim 15 , further comprising:
a switching element between one of the plurality of magnetoresistive elements and one of the plurality of bit lines.
17 . The magnetic memory according to claim 12 , further comprising:
an insulating film between the third portion and the magnetic cylinders.
18 . The magnetic memory according to claim 17 , further comprising:
a non-magnetic conductive film between one of the fourth portions and one of the magnetic cylinders.
19 . The magnetic memory according to claim 12 , further comprising:
a non-magnetic conductive film between one of the fourth portions and one of the magnetic cylinders.