Triple via chain for advanced interconnect in a memory device

1 . A memory device comprising:

a first portion comprising a memory array comprising a plurality of memory cells and a first via chain segment for performing a test operation;

a second portion comprising processing circuitry and a second via chain segment for performing the test operation; and

an interconnect coupling the first portion and the second portion, the interconnect comprising a third via chain segment, wherein the first via chain segment, second via chain segment, and third via chain segment can be selected independently, and wherein the first via chain segment, the second via chain segment, and the third via chain segment are each configured to detect physical defects including at least one of cracks, misalignments, or disconnections within respective portions of the memory device by measuring at least one of voltage or current across respective via chain segments.

2 . The memory device of claim 1 , wherein the first via chain segment, the second via chain segment, and the third via chain segment each comprise a plurality of portions, wherein a portion of the plurality of portions corresponds to a side of the memory device.

3 . The memory device of claim 2 , further comprising:

a multiplexer coupled with the plurality of portions of the first via chain segment, second via chain segment, and third via chain segment, wherein the multiplexer is to select a first portion of the plurality of portions during the test operation.

4 . The memory device of claim 1 , wherein the first via chain segment comprises a first terminal and a second terminal, the memory device further comprising:

a comparator coupled to the second terminal of the first via chain segment, the comparator to compare a first signal at the second terminal with a second signal generated at the first terminal.

5 . The memory device of claim 1 , wherein the first via chain segment comprises a first terminal and a second terminal, and wherein:

the first terminal is to drive at least one of a current or a voltage to the first via chain segment; and

the second terminal is grounded during the test operation.

6 . The memory device of claim 1 , wherein the first via chain segment comprises a first terminal and a second terminal, and wherein:

the first terminal is to drive at least one of a current or a voltage to the first via chain segment; and

the second terminal is in a floating state during the test operation.

7 . The memory device of claim 1 , further comprising:

a multiplexer coupled with the first via chain segment, the second via chain segment, and the third via chain segment, wherein the multiplexer is to select the first via chain segment, the second via chain segment, or the third via chain segment for the test operation.

8 . A method, comprising:

selecting, at a first portion of a memory device, a first via chain segment of one or more via chain segments of the memory device for a test operation, wherein the one or more via chain segments comprises a second via chain segment at a second portion of the memory device and a third via chain segment at a third portion of the memory device;

testing the first portion of the memory device responsive to selecting the first via chain segment; and

determining one or more errors associated with the first portion of the memory device responsive to testing the first portion of the memory device, wherein the first via chain segment, the second via chain segment, and the third via chain segment are each configured to detect physical defects including at least one of cracks, misalignments, or disconnections within respective portions of the memory device by measuring at least one of voltage or current across respective via chain segments.

9 . The method of claim 8 , wherein testing the first portion of the memory device further comprises:

driving at least one of a current or a voltage on a first terminal of the first via chain segment;

grounding a second terminal of the first via chain segment; and

measuring at least one of an output voltage or an output current at the first terminal responsive to grounding the second terminal.

10 . The method of claim 9 , further comprising:

determining at least one of that the output voltage is near ground or that the output current is high, wherein determining the one or more errors associated with the first portion of the memory device is responsive to determining the at least one of that the output voltage is near ground or that the output current is high.

11 . The method of claim 9 , further comprising:

determining at least one of that the output voltage is not near ground or that the output current is not high; and

determining a lack of errors associated with the first portion responsive to determining the at least one of that the output voltage is not near ground or that the output current is not high.

12 . The method of claim 8 , wherein testing the first portion of the memory device further comprises:

driving a voltage on a first terminal of the first via chain segment;

floating a second terminal of the first via chain segment; and

measuring a current at the first terminal responsive to floating the second terminal.

13 . The method of claim 12 , further comprising:

determining a non-zero current, wherein determining the one or more errors associated with the first portion of the memory device is responsive to determining the current is non-zero.

14 . The method of claim 8 , wherein testing the first portion of the memory device further comprises:

transmitting a signal from a first terminal of the first via chain segment to a second terminal of the first via chain segment;

comparing the signal at the first terminal with the signal at the second terminal; and

determining transmission line characteristics of the first via chain segment responsive to comparing the signal.

15 . The method of claim 8 , wherein the first via chain segment comprises a plurality of portions, each portion corresponding to at least one of a side, segment, or corner of the memory device, the method further comprising:

selecting a first portion of the plurality of portions of the first via chain segment, wherein the first portion is associated with at least one of a first side, a first segment, or a first corner of the memory device; and

testing the at least one of the first side, the first segment, or the first corner of the memory device responsive to selecting the first portion.

16 . The method of claim 8 , further comprising:

selecting, at the second portion of the memory device, the second via chain segment of one or more via chain segments of the memory device for a second test operation, wherein the second test operation is independent of the test operation.

17 . A memory device comprising:

a memory array comprising memory cells; and

control logic coupled to the memory array, the control logic to:

select, at a first portion of the memory device, a first via chain segment of one or more via chain segments of the memory device for a test operation, wherein the one or more via chain segments comprises a second via chain segment at a second portion of the memory device and a third via chain segment at a third portion of the memory device;

test the first portion of the memory device responsive to selecting the first via chain segment; and

determine one or more errors associated with the first portion of the memory device responsive to testing the first portion of the memory device, wherein the first via chain segment, the second via chain segment, and the third via chain segment are each configured to detect physical defects including at least one of cracks, misalignments, or disconnections within respective portions of the memory device by measuring at least one of voltage or current across respective via chain segments.

18 . The memory device of claim 17 , wherein to test the first portion, the control logic is to:

drive at least one of a current or a voltage on a first terminal of the first via chain segment;

ground a second terminal of the first via chain segment; and

measure at least one of an output voltage or an output current at the first terminal responsive to grounding the second terminal.

19 . The memory device of claim 18 , wherein the control logic is to:

determine at least one of that the output voltage is zero or the output current is high, wherein the control logic is to determine the one or more errors associated with the first portion of the memory device responsive to determining the at least one of that that the output voltage is zero or the output current is high.

20 . The memory device of claim 18 , wherein the control logic is to:

determine that the output voltage is non-zero or that the output current is not high; and

determine a lack of errors associated with the first portion responsive to determining the at least one of that the output voltage is non-zero or the output current is not high.