Composite thermistor element
View Patent ↗A composite thermistor element is described. The element includes a sensor material that is disposed between a pair of electrodes. The sensor material includes particles in a dielectric matrix. Each of the particles have: a core having a temperature dependent resistance, and a cover layer of an inorganic material. The particles form an electron conducting pathway between the electrodes having a temperature dependent resistance and a base-line resistance. Further aspects relate to a method of manufacturing the thermistor, the coated particles, a composition for use in the manufacturing of composite thermistors that includes the particles, and to a temperature sensor including the thermistor described herein.
1 . A composite thermistor element comprising:
a sensor material disposed between a pair of electrodes,
wherein the sensor material comprises particles dispersed in a matrix, the particles contacting each other to form an electron conducting pathway between the electrodes, and
wherein the particles have:
a core comprising a semiconducting ceramic material having temperature dependent resistance with a material specific temperature coefficient of resistance, and
an insulating cover layer of an inorganic material having a thickness and resistivity in accordance with a predetermined baseline resistance component of an overall electrical resistance across the sensor material along the pathway between the electrodes, the overall resistance further including a temperature dependent component imposed by the core of the particles.
2 . The composite thermistor element according to claim 1 , wherein the inorganic material has a bandgap larger than 3.2 eV.
3 . The composite thermistor element according to claim 1 , wherein the cover layer has a thickness in a range enabling electron tunneling between cores of contacting ones of the particles.
4 . The composite thermistor element according to claim 1 , wherein the cover layer has a thickness in a range of 1-10 nanometers.
5 . The composite thermistor element according to claim 1 , wherein the cover layer comprises one or more of the group consisting of: aluminum oxide, aluminum nitride, zirconium oxide, silicon oxide, and mixtures thereof.
6 . The composite thermistor element according to claim 1 , wherein the cover layer surrounding the core has a uniform thickness.
7 . The composite thermistor element according to claim 1 , wherein the particles have a maximum cross-section dimension in a range between 100 nanometers and 45 micrometers.
8 . A composition for manufacturing the sensor material of a composite thermistor element according to claim 1 , wherein the composition comprises:
a matrix material or precursor thereto, and
particles having:
a core comprising a semiconducting ceramic material having temperature dependent resistance, and
an insulating cover layer of an inorganic material,
wherein the cover layer has a thickness and resistivity within a range enabling electron tunneling between cores of contacting ones of the particles.
9 . The composition according to claim 8 , wherein the composition is mixed with a suitable liquid carrier and wherein the particles have a maximum cross-section dimension in a range between 100 nanometers and 45 micrometers.
10 . A temperature sensor comprising read-out electronics and the thermistor element according to claim 1 .
11 . The temperature sensor according to claim 10 , wherein the thermistor element is integrally provided on a flexible polymer film.
12 . A method of manufacturing a composite thermistor element comprising:
providing a powder of a semiconducting ceramic having temperature dependent resistance;
coating the powder with an inorganic material to form particles having:
a core comprising the semiconducting ceramic material, and
an insulating cover layer of the inorganic material; and
processing the composition to form a sensor material between a pair of electrodes, the sensor material comprising the particles dispersed in the matrix,
wherein ones of the particles contact each other to form an electron conducting pathway between the electrodes, and
wherein the thickness and resistivity of the cover layer is provided in accordance with a predetermined baseline resistance component of an overall electrical resistance across the sensor material, said overall resistance further including a temperature dependent component imposed by the core of the particles.
13 . The method according to claim 12 , wherein the coating the powder with an inorganic material includes an atomic layer deposition process.
14 . The method according to claim 13 , wherein the atomic layer deposition process comprises fluidizing the powder in the process flow.
15 . The method according to claim 14 , wherein the processing is performed at a temperature below 300° C.