Inner electrode material for multilayered capacitor and multilayered capacitor comprising the same
A multilayered capacitor includes a capacitor body including a dielectric layer and an inner electrode, and an external electrode disposed outside the capacitor body, in which the inner electrode includes a compound represented by the following Chemical Formula 1, and the compound has a Brunauer-Emmett-Teller (BET) specific surface area of 1.0 to 2.2 m 2 /g: M1 a+1 M2M3 a [Chemical Formula 1] (in Chemical Formula 1, M1 is Ti, V, Sc, Zr or Mo, M2 is Al, Si, Sn, Cd, In, Ga, Ge, Pb, As, S or P, M3 is C or N, a is 1 to 3).
1 . A multilayered capacitor, comprising:
a capacitor body including a dielectric layer and an inner electrode; and
an external electrode disposed outside the capacitor body,
wherein the inner electrode includes a compound represented by the following Chemical Formula 1, and the compound has a Brunauer-Emmett-Teller (BET) specific surface area of 1.0 to 2.2 m 2 /g:
M1 a+1 M2M3 a [Chemical Formula 1]
(in Chemical Formula 1, M1 is Ti, V, Sc, Zr or Mo, M2 is Al, Si, Sn, Cd, In, Ga, Ge, Pb, As, S or P, M3 is C or N, a is 1 to 3), and
wherein the compound has an electrical conductivity of 1.05×10 6 S/m or more.
2 . The multilayered capacitor of claim 1 , wherein:
in Chemical Formula 1, M1 is Ti or V, M2 is Al, Si or Sn, and M3 is C.
3 . The multilayered capacitor of claim 1 , wherein:
the compound is Ti 3 AlC 2 , Ti 2 AlC, V 2 AlC, Ti 3 SiC 2 or Ti 3 SnC 2 .
4 . The multilayered capacitor of claim 1 , wherein:
the compound has an average particle diameter D50 of 400 to 700 nm.
5 . The multilayered capacitor of claim 1 , wherein:
the compound has a volume reduction rate of 5% or less at a temperature of 1100° C. compared to a volume reduction rate at a temperature of 800° C. when analyzed by thermomechanical analyzer (TMA).
6 . The multilayered capacitor of claim 1 , wherein:
the inner electrode does not include nickel (Ni), barium titanate (BaTiO 3 ), silicon dioxide (SiO 2 ), or tungsten (W).
7 . The multilayered capacitor of claim 1 , wherein:
the dielectric layer includes a plurality of dielectric crystal grains, and the dielectric crystal grains include BamTiO 3 (0.995≤m≤1.010) as a main component, and hafnium (Hf), manganese (Mn), chromium (Cr), silicon (Si), aluminum (Al), magnesium (Mg), tin (Sn), antimony (Sb), germanium (Ge), gallium (Ga), indium (In), or a combination thereof as an accessory component.
8 . A method of manufacturing a multilayered capacitor, comprising:
forming a dielectric green sheet using dielectric powder;
forming a conductive paste layer on a surface of the dielectric green sheet including a compound represented by the following Chemical Formula 1 and having a Brunauer-Emmett-Teller (BET) specific surface area of 1.0 to 2.2 m 2 /g,
M1 a+1 M2M3 a [Chemical Formula 1]
(in Chemical Formula 1, M1 is Ti, V, Sc, Zr or Mo, M2 is Al, Si, Sn, Cd, In, Ga, Ge, Pb, As, S or P, M3 is C or N, a is 1 to 3);
forming a dielectric green sheet laminate by stacking the dielectric green sheets on which the conductive paste layer is formed;
forming a capacitor body including a dielectric layer and an inner electrode by firing the dielectric green sheet laminate in an oxidizing atmosphere; and
forming an external electrode on one surface of the capacitor body,
wherein the compound has an electrical conductivity of 1.05×10 6 S/m or more.
9 . The method of manufacturing the multilayered capacitor of claim 8 , wherein:
the oxidizing atmosphere is an air or oxygen (O 2 ) atmosphere.
10 . The method of manufacturing the multilayered capacitor of claim 8 , wherein:
the firing of the dielectric green sheet laminate is performed using a hot press method.
11 . The method of manufacturing the multilayered capacitor of claim 8 , wherein:
the conductive paste layer does not include nickel (Ni), barium titanate (BaTiO 3 ), silicon dioxide (SiO 2 ), and tungsten (W).