Ion beam deposition apparatus and ion beam deposition method using the same

1 . An ion beam deposition method comprising:

placing a substrate into an ion beam deposition apparatus;

irradiating an ion beam from an ion beam source toward a target plate; and

rotating the target plate during the irradiating the ion beam,

wherein the target plate includes a first region that includes a first material and a second region that includes a second material different from the first material,

wherein each rotation of the target plate comprises irradiation of each of the first region and the second region by the ion beam, and

wherein the rotating the target plate during the irradiating the ion beam comprises changing a rotation speed of the target plate.

2 . The ion beam deposition method of claim 1 , wherein the irradiating the ion beam toward the target plate comprises:

allowing the ion beam to sputter the first material and the second material from the target plate; and

depositing the first material and the second material on the substrate.

3 . The ion beam deposition method of claim 2 , wherein the depositing the first material and the second material on the substrate-comprises allowing the first material and the second material to form a single deposition layer on the substrate.

4 . The ion beam deposition method of claim 1 , wherein the irradiating the ion beam toward the target plate comprises simultaneously irradiating the ion beam to the first region and the second region.

5 . The ion beam deposition method of claim 1 , wherein an area of the first region is different from an area of the second region.

6 . The ion beam deposition method of claim 1 , wherein each of the first material and the second material comprises at least one of silicon (Si), tungsten (W), cobalt (Co), copper (Cu), aluminum (Al), ruthenium (Ru), molybdenum (Mo), hafnium (Hf), titanium (Ti), lanthanum (La), indium (In), tin (Sn), germanium (Ge), arsenic (As), tellurium (Te), selenium (Se), Praseodymium (Pr), and polyimide.

7 . The ion beam deposition method of claim 1 , wherein the irradiating the ion beam toward the target plate comprises simultaneously irradiating the ion beam to at least a portion of the first region and at least a portion of the second region.

8 . The ion beam deposition method of claim 1 , wherein the target plate further comprises a third region comprising a third material different from each of the first material and the second material.