IP Library Granted Patent US 12695087
Granted Patent B2
US 12695087 · App. 17/899,690 · Granted Jul 28, 2026

Method for producing silicon-based active material particles and silicon-based active material precursor particles

Inventors: Kohki Takeshita (Nishinomiya, JP); Yusuke Kashitani (Nishinomiya, JP)
Assignee: OSAKA Titanium technologies Co., Ltd.
H01M4/386H01M4/0421H01M10/0525
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Quick Facts
Patent No.
US 12695087
App. No.
17/899,690
Granted
Jul 28, 2026
Kind
B2
Abstract

A method for producing a silicon-based active material precursor particle includes a laminated coating forming step for forming a laminated coating of a silicon-based active material on a substrate by repeating a vapor deposition step for depositing a silicon-based active material forming material on the substrate to form the silicon-based active material forming material having a multilayer structure. Following the laminated coating step, the method includes a scraping step for scraping off the laminated coating of the silicon-based active material from the substrate after repeating the vapor deposition step to obtain the silicon-based active material precursor particle having the multilayer structure as a part thereof. The substrate can be a rotating body having a horizontal axis for repeating the vapor deposition step or be one that is relatively movable with respect to the supply path of the silicon-based active material for repeating the vapor deposition step.

Claims (4)

1 . A method for producing a silicon-based active material precursor particle, comprising:

a laminated coating forming step for forming a laminated coating of a silicon-based active material on a rotating body having a horizontal axis by repeating a vapor deposition step for depositing a silicon-based active material forming material on the rotating body to form the silicon-based active material forming material having a multilayer structure,

a scraping step for scraping off the laminated coating of the silicon-based active material from the rotating body after repeating the vapor deposition step to obtain the silicon-based active material precursor particle having the multilayer structure as a part thereof.

2 . The method for producing a silicon-based active material precursor particle according to claim 1 , wherein the rotating body is movable with respect to the supply path of the silicon-based active material for repeating the vapor deposition step.