Microelectronic device package with integrated antenna
A described example includes: a semiconductor die mounted to a die pad of a package substrate, the semiconductor die having bond pads on a device side surface facing away from the die pad; bond wires coupling the bond pads of the semiconductor die to leads of the package substrate, the leads spaced from the die pad; an antenna positioned over the device side surface of the semiconductor die and having a feed line coupled between the antenna and a device side surface of the semiconductor die; and mold compound covering the semiconductor die, the bond wires, a portion of the leads, and the die side surface of the die pad, a portion of the antenna exposed from the mold compound.
1 . An apparatus, comprising:
a semiconductor die mounted to a die pad of a package substrate, the semiconductor die having a bond pad on a device side surface facing away from the die pad;
a bond wire coupling the bond pad to a lead of the package substrate, the lead spaced from the die pad;
an antenna including a first conductor and a first feed line, a portion of the first feed line coupled to the device side surface of the semiconductor die; and
mold compound covering portions of the semiconductor die, the bond wire, the lead, and the antenna, wherein a surface of the first conductor is exposed on a surface of the mold compound.
2 . The apparatus of claim 1 , wherein the device side surface includes a port.
3 . The apparatus of claim 2 , wherein the portion of the first feed line is coupled to the port.
4 . The apparatus of claim 3 , wherein the portion of the first feed line is coupled to the port via solder.
5 . The apparatus of claim 1 , wherein the antenna comprises a dipole antenna.
6 . The apparatus of claim 1 , wherein the antenna comprises a dipole antenna, a Vivaldi antenna, or a patch antenna.
7 . The apparatus of claim 1 , wherein the antenna comprises copper or aluminum or an alloy thereof.
8 . The apparatus of claim 1 , wherein the surface of the first conductor is exposed from the mold compound on a side surface of the apparatus.
9 . The apparatus of claim 8 , wherein the surface of the first conductor is coplanar with a plane along the side surface of the apparatus.
10 . The apparatus of claim 1 , wherein the antenna comprises a second conductor and a second feed line coupled to the second conductor, a surface of the second conductor exposed from the mold compound.
11 . The apparatus of claim 1 , wherein the semiconductor die is a transmitter, a receiver, or a transceiver of signals that have a frequency greater than 10 GHz.
12 . The apparatus of claim 1 , wherein the apparatus is a quad flat no-lead (QFN) package.
13 . An apparatus, comprising:
a semiconductor die mounted to a die pad of a package substrate, the semiconductor die having a bond pad on a device side surface facing away from the die pad;
a bond wire coupling the bond pad to a lead of the package substrate, the lead spaced from the die pad;
an antenna including a first conductor coupled to a first feed line, and a second conductor coupled to a second feed line, a portion of the first feed line coupled to the device side surface of the semiconductor die, and a portion of the second feed line coupled to the device side surface of the semiconductor; and
mold compound covering portions of the semiconductor die, the bond wire, the lead, and the antenna, wherein a surface of the first conductor and a surface of the second conductor are exposed from the mold compound, and wherein a surface of the first feed line and a surface of the second feed line are exposed from the mold compound.
14 . The apparatus of claim 13 , wherein the surface of the first conductor and the surface of the second conductor are exposed from a side surface of the apparatus.
15 . The apparatus of claim 13 , wherein the surface of the first feed line and the surface of the second feed line are exposed from a top surface of the apparatus.
16 . The apparatus of claim 13 , wherein the antenna comprises a dipole antenna.
17 . The apparatus of claim 13 , wherein the semiconductor die is a transmitter, a receiver, or a transceiver of signals that have a frequency greater than 10 GHz.
18 . The apparatus of claim 13 , wherein the apparatus is a quad flat no-lead (QFN) package.