Broadband waveplate device based on optical phase modulation and fabrication method therefor

1 . A broadband waveplate device comprising:

a first conductive layer;

a multiple-quantum-well layer in which well layers and barrier layers are alternately stacked, disposed on the first conductive layer; and

an antenna layer disposed on the multiple-quantum-well layer and having a shape of a plurality of stripes parallel to one another,

wherein the antenna layer has a shape in which ends at one side of the plurality of stripes are connected to one another and ends at another side of the plurality of stripes are connected to one another.

2 . The broadband waveplate device of claim 1 , wherein the antenna layer is integrally formed as a single body.

3 . The broadband waveplate device of claim 1 , wherein the multiple-quantum-well layer is patterned into a shape corresponding to a shape of the antenna layer.

4 . The broadband waveplate device of claim 1 , further comprising a power source configured to apply a potential difference between the first conductive layer and the antenna layer.

5 . The broadband waveplate device of claim 4 , wherein the power source further comprises an adjuster configured to adjust the potential difference applied between the first conductive layer and the antenna layer.

6 . The broadband waveplate device of claim 1 , further comprising a second conductive layer interposed between the first conductive layer and the multiple-quantum-well layer.

7 . The broadband waveplate device of claim 6 , wherein a bonding strength between the second conductive layer and the multiple-quantum-well layer is greater than a bonding strength between the first conductive layer and the multiple-quantum-well layer.

8 . The broadband waveplate device of claim 1

further comprising an actuator located such that the first conductive layer is interposed between the actuator and the multiple-quantum-well layer, the actuator capable of adjusting a direction of the plurality of stripes of the antenna layer with respect to incident light.

9 . A method of fabrication a broadband waveplate device, the method comprising:

forming, on a substrate, a multiple-quantum-well layer in which well layers and barrier layers are alternately stacked;

forming a first conductive layer on the multiple-quantum-well layer;

removing the substrate;

forming a temporary conductive layer on a surface of the multiple-quantum-well layer in a direction away from the first conductive layer;

forming a sacrificial layer on the temporary conductive layer;

forming, in the sacrificial layer, a plurality of openings parallel to one another;

forming an antenna layer having a shape of a plurality of stripes parallel to one another, by removing portions of the temporary conductive layer exposed through the plurality of openings of the sacrificial layer; and

removing the sacrificial layer.

10 . The method of claim 9 , wherein an indium phosphide (InP) wafer, a gallium arsenide (GaAs) wafer, or a silicon (Si) wafer is used as the substrate.

11 . The method of claim 9 , where a silicon nitride layer is used as the sacrificial layer.

12 . The method of claim 9 , wherein the forming of the antenna layer comprises simultaneously removing portions of the temporary conductive layer exposed through the plurality of openings in the sacrificial layer and portions of the multiple-quantum-well layer corresponding to the plurality of openings in the sacrificial layer.

13 . The method of claim 9 , wherein the forming of the first conductive layer comprises forming a second conductive layer on the multiple-quantum-well layer and forming the first conductive layer on the second conductive layer.

14 . The method of claim 13 , wherein a bonding strength between the second conductive layer and the multiple-quantum-well layer is greater than a bonding strength between the first conductive layer and the multiple-quantum-well layer.

15 . A broadband waveplate device comprising:

a first conductive layer;

a multiple-quantum-well layer in which well layers and barrier layers are alternately stacked, disposed on the first conductive layer;

an antenna layer disposed on the multiple-quantum-well layer and having a shape of a plurality of stripes parallel to one another; and

an actuator located such that the first conductive layer is interposed between the actuator and the multiple-quantum-well layer, the actuator capable of adjusting a direction of the plurality of stripes of the antenna layer with respect to incident light.