Semiconductor optical device
A semiconductor optical device includes a substrate of a first conductivity type; an optical confinement layer of the first conductivity type, which is arranged above the substrate of the first conductivity type; a multi quantum well layer, which is arranged above the optical confinement layer of the first conductivity type, and comprises a plurality of well layers and a plurality of barrier layers; an optical confinement layer of a second conductivity type, which is arranged on the multi quantum well layer; and a PL stabilization layer, which is arranged between the substrate of the first conductivity type and the multi quantum well layer. The PL stabilization layer having a thickness that is half a thickness of the multi quantum well layer or more, and having a composition wavelength that is shorter than a composition wavelength of the plurality of well layers of the multi quantum well layer.
1 . A semiconductor optical device, comprising:
a substrate of a first conductivity type;
a first optical confinement layer of the first conductivity type arranged above the substrate;
a multi quantum well layer arranged above the first optical confinement layer,
wherein the multi quantum well layer comprises a plurality of well layers and a plurality of barrier layers;
a second optical confinement layer of a second conductivity type arranged on the multi quantum well layer; and
a photoluminescence (PL) stabilization layer arranged between the substrate and the multi quantum well layer,
the PL stabilization layer having a thickness that is half a thickness of the multi quantum well layer or more,
the PL stabilization layer having a consistent band gap throughout the thickness of the PL stabilization layer, and
an entirety of the PL stabilization layer having a composition wavelength that is shorter than a composition wavelength of the plurality of well layers, and is longer than a composition wavelength of the first optical confinement layer.
2 . The semiconductor optical device of claim 1 , wherein the PL stabilization layer has a carrier concentration of an undoped layer or less than 1×10{circumflex over ( )}17/cm 3 .
3 . The semiconductor optical device of claim 1 , wherein the composition wavelength of the PL stabilization layer is longer than a wavelength of excitation light to be used in PL measurement of the multi quantum well layer.
4 . The semiconductor optical device of claim 3 , wherein the first optical confinement layer and the second optical confinement layer each have a composition wavelength that is longer than the wavelength of excitation light.
5 . The semiconductor optical device of claim 1 , wherein the thickness of the PL stabilization layer is twice a total thickness of the first optical confinement layer and the second optical confinement layer or more.
6 . The semiconductor optical device of claim 1 , wherein the PL stabilization layer is arranged between the substrate and the first optical confinement layer.
7 . The semiconductor optical device of claim 1 , wherein the PL stabilization layer is arranged between the multi quantum well layer and the first optical confinement layer.
8 . The semiconductor optical device of claim 1 , wherein the first conductivity type is an n-type, and the second conductivity type is a p-type.
9 . The semiconductor optical device of claim 1 , wherein the multi quantum well layer is configured to emit or absorb 1.3-μm band light,
wherein the composition wavelength of the PL stabilization layer is 1.1 μm or more, and
wherein the thickness of the PL stabilization layer is thicker than a thickness of the first optical confinement layer.
10 . The semiconductor optical device of claim 9 , wherein the composition wavelength of the PL stabilization layer is 1.28 μm or less.
11 . The semiconductor optical device of claim 9 , wherein the first optical confinement layer and the second optical confinement layer each have a composition wavelength of 1.03 μm or more and 1.09 μm or less.
12 . The semiconductor optical device of claim 1 , wherein the thickness of the PL stabilization layer is 100 nm or more and 300 nm or less.
13 . The semiconductor optical device of claim 1 , wherein the semiconductor optical device is a semiconductor laser.
14 . An apparatus, comprising:
a substrate of a first conductivity type;
a photoluminescence (PL) stabilization layer above the substrate;
a first optical confinement layer of the first conductivity type above the PL stabilization layer;
a multi quantum well layer above the first optical confinement layer,
wherein the multi quantum well layer comprises a plurality of well layers and a plurality of barrier layers; and
a second optical confinement layer of a second conductivity type on the multi quantum well layer,
wherein the PL stabilization layer has a band gap that is larger than a band gap of the plurality of well layers, and is smaller than a band gap of the first optical confinement layer,
wherein the band gap of the PL stabilization layer is consistent through a thickness of the PL stabilization layer, and
wherein the thickness of the PL stabilization layer is half or more of a thickness of the multi quantum well layer.
15 . The apparatus of claim 14 , wherein a composition wavelength of the PL stabilization layer is longer than a wavelength of excitation light to be used in PL measurement of the multi quantum well layer.
16 . The apparatus of claim 15 , wherein the first optical confinement layer and the second optical confinement layer each have a composition wavelength that is longer than the wavelength of excitation light.
17 . The apparatus of claim 14 , wherein a composition wavelength of the PL stabilization layer is 1.1 μm or more.
18 . The apparatus of claim 17 , wherein the composition wavelength of the PL stabilization layer is 1.28 μm or less.
19 . The apparatus of claim 14 , wherein the first optical confinement layer is arranged on the PL stabilization layer.
20 . The apparatus of claim 14 , wherein the PL stabilization layer is arranged on the substrate.