IP Library Granted Patent US 12695295
Granted Patent B2
US 12695295 · App. 18/792,110 · Granted Jul 28, 2026

Overcurrent protection circuit, semiconductor device, electronic apparatus, and vehicle

Inventors: Katsuaki Yamada (Kyoto, JP); Toru Takuma (Kyoto, JP); Shuntaro Takahashi (Kyoto, JP)
Assignee: Rohm Co., Ltd.
H02H9/025
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Quick Facts
Patent No.
US 12695295
App. No.
18/792,110
Granted
Jul 28, 2026
Kind
B2
Abstract

An overcurrent protection circuit that limits a current to be monitored based on a current limit signal includes: a first transistor and a second transistor configured to form an amplifier input stage that receives input of a detection signal according to the current to be monitored; a third transistor configured to generate a current output signal according to a difference between the detection signal and a reference signal, and configured to form an amplifier output stage that inputs the current output signal as a negative feedback to the amplifier input stage; and a current mirror circuit configured to generate the current limit signal by replicating a signal based on the current output signal.

Claims (35)

1 . An overcurrent protection circuit that limits a current to be monitored based on a current limit signal, comprising:

a first transistor and a second transistor configured to form an amplifier input stage that receives input of a detection signal according to the current to be monitored;

a third transistor configured to generate a current output signal according to a difference between the detection signal and a reference signal, and configured to form an amplifier output stage that inputs the current output signal as a negative feedback to the amplifier input stage; and

a current mirror circuit configured to generate the current limit signal by replicating a signal based on the current output signal,

wherein the current mirror circuit includes a fourth transistor, a fifth transistor, a source follower circuit, and a first current source,

wherein a gate of the source follower circuit is connected to an input end of the current mirror circuit, and a source of the source follower circuit is connected to a gate of the fourth transistor and a gate of the fifth transistor, and

wherein the first current source is configured to control a value of a discharging current that discharges the gate of the fourth transistor and the gate of the fifth transistor.

2 . The overcurrent protection circuit of claim 1 , wherein after the current to be monitored reaches a start value, the current to be monitored is limited to converge to a limit value smaller than the start value.

3 . The overcurrent protection circuit of claim 2 , wherein the start value is switched.

4 . The overcurrent protection circuit of claim 3 , further comprising a sixth transistor configured to output a comparison result between the detection signal and the reference signal,

wherein a value of the reference signal is switched based on the comparison result.

5 . The overcurrent protection circuit of claim 4 , wherein the first current source is configured to vary the discharging current based on the comparison result.

6 . The overcurrent protection circuit of claim 5 , wherein the first current source is configured to vary the discharging current based on a delayed signal of a signal, which is based on the comparison result.

7 . The overcurrent protection circuit of claim 5 , wherein the first current source is configured to vary the discharging current based on a signal indicating that a temperature to be monitored exceeds a predetermined value.

8 . The overcurrent protection circuit of claim 4 , wherein a first main electrode of the first transistor is connected to a control electrode of each of the third transistor and the sixth transistor,

wherein a first main electrode of the second transistor is connected to a control electrode of each of the first transistor and the second transistor,

wherein a first main electrode of the third transistor is connected to an output node of the current output signal,

wherein a second main electrode of the first transistor is connected to an application terminal of the detection signal,

wherein a second main electrode of the second transistor is connected to a second main electrode of the third transistor, and

wherein a first main electrode of the sixth transistor is connected to a first potential node.

9 . The overcurrent protection circuit of claim 8 , further comprising:

a second current source connected between a second potential node and the first main electrode of the first transistor and configured to generate a reference current; and

a third current source connected between the second potential node and the first main electrode of the second transistor and configured to generate the reference current.

10 . The overcurrent protection circuit of claim 8 , further comprising:

a fixed resistor connected between the second main electrode of the first transistor and the first potential node; and

a variable resistor connected between the second main electrode of the second transistor and the first potential node.

11 . The overcurrent protection circuit of claim 10 , further comprising a latch circuit configured to latch the comparison result,

wherein a resistance value of the variable resistor varies based on an output of the latch circuit.

12 . A semiconductor device comprising:

an output transistor; and

the overcurrent protection circuit of claim 1 ,

wherein an output current flowing through the output transistor is the current to be monitored.

13 . The semiconductor device of claim 12 , wherein the overcurrent protection circuit is configured to limit the output current by controlling a drive signal for the output transistor based on the current output signal.

14 . An electronic apparatus comprising the semiconductor device of claim 12 .

15 . A vehicle comprising the electronic apparatus of claim 14 .