Electrostatic chuck, substrate support, and substrate processing apparatus

Inventors: Masashi Shimoda (Miyagi, JP); Yasuharu Sasaki (Miyagi, JP)

Assignee: TOKYO ELECTRON LIMITED

H02N13/00 C23C16/4586

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Quick Facts

Patent No.: US 12695399
App. No.: 18/443,834
Granted: Jul 28, 2026
Kind: B2

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Abstract

An electrostatic chuck, includes: a central region configured to support a substrate; at least one through-hole formed in the central region; a first substrate contact portion arranged around the through-hole; and a second substrate contact portion arranged around the first substrate contact portion. The first substrate contact portion and the second substrate contact portion have protrusions protruding upward from the central region. The protrusions are arranged in the first substrate contact portion at a first density. The protrusions are arranged in the second substrate contact portion at a second density lower than the first density.

Claims (66)

1 . An electrostatic chuck, comprising:

a central region configured to support a substrate;

at least one through-hole formed in the central region for inserting a first lifter pin;

a first substrate contact portion arranged around the through-hole; and

a second substrate contact portion arranged around the first substrate contact portion,

wherein the first substrate contact portion and the second substrate contact portion have protrusions protruding upward from the central region,

wherein the protrusions are arranged in the first substrate contact portion at a first density,

wherein the protrusions are arranged in the second substrate contact portion at a second density lower than the first density,

wherein the through-hole is further formed in an annular region configured to support a ring assembly,

wherein the electrostatic chuck further includes a first ring contact portion arranged around the through-hole formed in the annular region, and a second ring contact portion arranged around the first ring contact portion,

wherein the first ring contact portion and the second ring contact portion have protrusions protruding upward from the annular region,

wherein the protrusions are arranged in the first ring contact portion at a third density, and

wherein the protrusions are arranged in the second ring contact portion at a fourth density lower than the third density.

2 . The electrostatic chuck of claim 1 , wherein the protrusions of the first substrate contact portion are arranged concentrically with the through-hole as a center.

3 . The electrostatic chuck of claim 2 , further comprising an electrostatic electrode configured to clamp the substrate,

wherein at least a portion of the first substrate contact portion is located above the electrostatic electrode.

4 . The electrostatic chuck of claim 3 , wherein the protrusions of the first substrate contact portion include an end protrusion arranged above an end of the electrostatic electrode in a side of the through-hole.

5 . The electrostatic chuck of claim 4 , wherein the protrusions of the first substrate contact portion include an inner protrusion arranged on an inner side of the end protrusion in a radial direction of the through-hole.

6 . The electrostatic chuck of claim 5 , wherein the inner protrusion is arranged on a first circumference with the through-hole as the center.

7 . The electrostatic chuck of claim 6 , wherein the protrusions of the first substrate contact portion include an outer protrusion arranged on an outer side of the end protrusion in the radial direction of the through-hole.

8 . The electrostatic chuck of claim 7 , wherein the outer protrusion is arranged on a second circumference with the through-hole as the center.

9 . The electrostatic chuck of claim 1 , wherein the through-holes include a hole for inserting a lifter pin.

10 . The electrostatic chuck of claim 9 , wherein the through-holes include a hole for supplying a heat transfer gas to control a temperature of the substrate.

11 . A substrate support, comprising:

a base; and

an electrostatic chuck disposed on an upper portion of the base,

wherein the electrostatic chuck includes:

a central region configured to support a substrate;

at least one through-hole formed in the central region;