Acoustic wave device and filter device
An acoustic wave device includes a support, a piezoelectric layer on the support, and an IDT electrode on the piezoelectric layer and includes a pair of busbars and electrode fingers. The support includes an acoustic reflection portion overlapping at least a portion of the IDT electrode. d/p is about 0.5 or less. Some of the electrode fingers are connected to one of the busbars, others of the electrode fingers are connected to another of the busbars. When viewed from a direction in which adjacent electrode fingers face each other, a region where the adjacent electrode fingers overlap each other is an intersection region. A region between the intersection region and the pair of busbars includes a pair of gap regions. A mass addition film is provided in at least a portion of at least one of the gap regions.
1 . An acoustic wave device comprising:
a support including a support substrate;
a piezoelectric layer on the support and being a rotated Y-cut lithium niobate layer;
an IDT electrode on the piezoelectric layer and including a pair of busbars and a plurality of electrode fingers; and
a protective film on the piezoelectric layer and covering the IDT electrode; wherein
the support includes an acoustic reflection portion overlapping at least a portion of the IDT electrode in plan view;
d/p is about 0.5 or less, when a thickness of the piezoelectric layer is d and a center-to-center distance of adjacent electrode fingers is p;
at least one of the plurality of electrode fingers are connected to one of the pair of busbars of the IDT electrode, others of the plurality of electrode fingers are connected to another of the pair of busbars, and the at least one of the plurality of electrode fingers connected to the one of the pair of busbars and the others of the plurality of electrode fingers connected to the another of the pair of busbars are interdigitated with each other;
when viewed from a direction in which adjacent electrode fingers of the plurality of electrode fingers face each other, a region where the adjacent electrode fingers overlap each other is an intersection region and a region which is located between the intersection region and the pair of busbars is a pair of gap regions;
a mass addition film is provided in at least a portion of at least one of the pair of gap regions;
when an extending direction of the plurality of electrode fingers is defined as an electrode finger extending direction, the intersection region includes a central region and a pair of edge regions sandwiching the central region in the electrode finger extending direction; and
both of the protective film and the mass addition film are provided in each of the pair of gap regions, and a total thickness of the protective film and the mass addition film in the pair gap regions is larger than a thickness of the protective film in the central region.
2 . The acoustic wave device according to claim 1 , wherein the mass addition film is provided in each of the pair of gap regions.
3 . The acoustic wave device according to claim 1 , wherein the mass addition film is a low acoustic velocity film, and an acoustic velocity of a bulk wave that propagates through the low acoustic velocity film is lower than an acoustic velocity of a bulk wave that propagates through the piezoelectric layer.
4 . The acoustic wave device according to claim 1 , wherein the mass addition film includes at least one of silicon oxide, tungsten oxide, niobium pentoxide, tantalum oxide, or hafnium oxide.
5 . The acoustic wave device according to claim 1 , wherein the mass addition film continuously overlaps at least one of the plurality of electrode fingers and a region between the at least one of the electrode fingers in plan view.
6 . The acoustic wave device according to claim 1 , wherein the mass addition film is provided between the IDT electrode and the piezoelectric layer.
7 . The acoustic wave device according to claim 1 , further comprising a dielectric film between the IDT electrode and the piezoelectric layer.
8 . The acoustic wave device according to claim 7 , wherein the mass addition film is made of a same material as a material of the dielectric film.
9 . The acoustic wave device according to claim 1 , wherein a thickness of the mass addition film is about 5 nm or more and about 100 nm or less.
10 . The acoustic wave device according to claim 1 , wherein
the mass addition film is a first mass addition film; and
a second mass addition film is provided in at least one of the pair of edge regions.
11 . The acoustic wave device according to claim 1 , wherein the acoustic reflection portion is a cavity portion provided in the support.
12 . The acoustic wave device according to claim 1 , wherein d/p is about 0.24 or less.
13 . The acoustic wave device according to claim 1 , wherein when a metallization ratio of the adjacent electrode fingers with respect to the intersection region is MR, MR≤about 1.75 (d/p)+0.075 is satisfied.
14 . The acoustic wave device according to claim 1 , wherein
Euler angles (φ, θ, φ) of the rotated Y-cut lithium niobate layer as the piezoelectric layer are in a range of Expression (1), Expression (2), or Expression (3):
. . . (0°±10°,0° to 20°,any φ) Expression (1);
. . . (0°±10°,20° to 80°,0° to 60° (1−(θ−50) 2 /900) 1/2 ) . . . or . . . (0°±10°,20° to 80°,[180°−60°(1−(θ−50) 2 /900) 1/2 ] to 180°) Expression (2); and
. . . (0°±10°,[180°−30°(1−(φ−90) 2 /8100) 1/2 ] to 180°,any φ) Expression (3).
15 . A filter device comprising:
at least one series arm resonator; and
at least one parallel arm resonator; wherein
the at least one series arm resonator and the at least one parallel arm resonator each include the acoustic wave device according to claim 1 ; and
a thickness of the mass addition film of the at least one parallel arm resonator is smaller than a thickness of the mass addition film of the at least one series arm resonator.
16 . An acoustic wave device comprising:
a support including a support substrate;
a piezoelectric layer on the support and being a rotated Y-cut lithium niobate layer;
an IDT electrode on the piezoelectric layer and including a pair of busbars and a plurality of electrode fingers; and
a dielectric film between the IDT electrode and the piezoelectric layer; wherein the support includes an acoustic reflection portion overlapping at least a portion of the IDT electrode in plan view;
d/p is about 0.5 or less, when a thickness of the piezoelectric layer is d and a center-to-center distance of adjacent electrode fingers is p;
at least one of the plurality of electrode fingers are connected to one of the pair of busbars of the IDT electrode, others of the plurality of electrode fingers are connected to another of the pair of busbars, and the at least one of the plurality of electrode fingers connected to the one of the pair of busbars and the others of the plurality of electrode fingers connected to the another of the pair of busbars are interdigitated with each other;
when viewed from a direction in which adjacent electrode fingers of the plurality of electrode fingers face each other, a region where the adjacent electrode fingers overlap each other is an intersection region and a region which is located between the intersection region and the pair of busbars is a pair of gap regions;
a mass addition film is provided in at least a portion of at least one of the pair of gap regions;
when an extending direction of the plurality of electrode fingers is defined as an electrode finger extending direction, the intersection region includes a central region and a pair of edge regions sandwiching the central region in the electrode finger extending direction; and
both of the dielectric film and the mass addition film are provided in the at least one of the pair of gap regions, and a total thickness of the dielectric film and the mass addition film in the at least one of pair of gap regions is larger than a thickness of the dielectric film in the central region.
17 . The acoustic wave device according to claim 16 , further comprising a protective film on the piezoelectric layer and covering the IDT electrode.
18 . The acoustic wave device according to claim 17 , wherein
both of the protective film and the mass addition film are provided in each of the pair of gap regions, and a total thickness of the protective film and the mass addition film in the pair gap regions is larger than a thickness of the protective film in the central region.
19 . An acoustic wave device comprising:
a support including a support substrate;
a piezoelectric layer on the support and being a rotated Y-cut lithium niobate layer;
an IDT electrode on the piezoelectric layer and including a pair of busbars and a plurality of electrode fingers;
a protective film on the piezoelectric layer and covering the IDT electrode; wherein the support includes an acoustic reflection portion overlapping at least a portion of the IDT electrode in plan view;
d/p is about 0.5 or less, when a thickness of the piezoelectric layer is d and a center-to-center distance of adjacent electrode fingers is p;
at least one of the plurality of electrode fingers are connected to one of the pair of busbars of the IDT electrode, others of the plurality of electrode fingers are connected to another of the pair of busbars, and the at least one of the plurality of electrode fingers connected to the one of the pair of busbars and the others of the plurality of electrode fingers connected to the another of the pair of busbars are interdigitated with each other;
when viewed from a direction in which adjacent electrode fingers of the plurality of electrode fingers face each other, a region where the adjacent electrode fingers overlap each other is an intersection region and a region which is located between the intersection region and the pair of busbars is a pair of gap regions;
a mass addition film is provided in at least a portion of at least one of the pair of gap regions; and
the mass addition film is made of a same material as a material of the protective film.
20 . An acoustic wave device comprising:
a support including a support substrate;
a piezoelectric layer on the support and being a rotated Y-cut lithium niobate layer; and
an IDT electrode on the piezoelectric layer and including a pair of busbars and a plurality of electrode fingers; wherein
the support includes an acoustic reflection portion overlapping at least a portion of the IDT electrode in plan view;
d/p is about 0.5 or less, when a thickness of the piezoelectric layer is d and a center-to-center distance of adjacent electrode fingers is p;
at least one of the plurality of electrode fingers are connected to one of the pair of busbars of the IDT electrode, others of the plurality of electrode fingers are connected to another of the pair of busbars, and the at least one of the plurality of electrode fingers connected to the one of the pair of busbars and the others of the plurality of electrode fingers connected to the another of the pair of busbars are interdigitated with each other;
when viewed from a direction in which adjacent electrode fingers of the plurality of electrode fingers face each other, a region where the adjacent electrode fingers overlap each other is an intersection region and a region which is located between the intersection region and the pair of busbars is a pair of gap regions;
a mass addition film is provided in at least a portion of at least one of the pair of gap regions; and
when an extending direction of the plurality of electrode fingers is defined as an electrode finger extending direction, a dimension of each of the pair of gap regions along the electrode finger extending direction is about 1 μm or more and about 5 μm or less.
21 . An acoustic wave device comprising:
a support including a support substrate;
a piezoelectric layer on the support and being a rotated Y-cut lithium niobate layer; and
an IDT electrode on the piezoelectric layer and including a pair of busbars and a plurality of electrode fingers; wherein
the support includes an acoustic reflection portion overlapping at least a portion of the IDT electrode in plan view;
d/p is about 0.5 or less, when a thickness of the piezoelectric layer is d and a center-to-center distance of adjacent electrode fingers is p;
at least one of the plurality of electrode fingers are connected to one of the pair of busbars of the IDT electrode, others of the plurality of electrode fingers are connected to another of the pair of busbars, and the at least one of the plurality of electrode fingers connected to the one of the pair of busbars and the others of the plurality of electrode fingers connected to the another of the pair of busbars are interdigitated with each other;
when viewed from a direction in which adjacent electrode fingers of the plurality of electrode fingers face each other, a region where the adjacent electrode fingers overlap each other is an intersection region and a region which is located between the intersection region and the pair of busbars is a pair of gap regions;
a mass addition film is provided in at least a portion of at least one of the pair of gap regions; and
a thickness y of the mass addition film is y≥about 5x+5, when an extending direction of the plurality of electrode fingers is defined as an electrode finger extending direction, a dimension of each of the pair of gap regions along the electrode finger extending direction is x, and a thickness of the mass addition film is y.
22 . The acoustic wave device according to claim 21 , wherein the thickness y of the mass addition film is about 5x+5≤y≤75 nm.