Circuit board and semiconductor package comprising same

1 . A circuit board comprising:

a first insulating layer including a through hole passing through an upper surface and a lower surface opposite to the upper surface;

a coating layer disposed on an inner wall of the through hole of the first insulating layer; and

a through electrode disposed to fill the through hole on the coating layer,

wherein the through electrode includes:

a first metal layer disposed on the coating layer; and

a second metal layer disposed on the first metal layer,

wherein the coating layer includes a first functional group, and

wherein the first insulating layer includes a reactive group bonded to the first functional group.

2 . The circuit board of claim 1 , wherein the reactive group of the first insulating layer is generated by surface treating the first insulating layer using at least one of corona and UV.

3 . The circuit board of claim 1 , wherein the reactive group of the first insulating layer includes at least one of O═C—OR, O═C—OH, C═C, C—OH, and C—OR, and wherein the R is an alkyl group constituting the first insulating layer.

4 . The circuit board of claim 1 , wherein the first functional group of the coating layer includes at least one of a carboxyl group (COOH) and C═C that bonds to a reactive group of the first insulating layer.

5 . The circuit board of claim 1 , wherein the reactive group of the first insulating layer includes a hydroxyl group (OH).

6 . The circuit board of claim 1 , wherein the coating layer includes a second functional group that coordinates with the first metal layer.

7 . The circuit board of claim 6 , wherein the first metal layer is an electroless plating layer, and

wherein the second metal layer is an electrolytic plating layer formed using the first metal layer as a seed layer.

8 . The circuit board of claim 7 , wherein the second functional group of the coating layer coordinates with a catalyst metal of the first metal layer.

9 . The circuit board of claim 8 , wherein the catalyst metal of the first metal layer includes palladium, and

wherein at least one of nitrogen (N) and sulfur(S) of the second functional group of the coating layer coordinates with the palladium.

10 . The circuit board of claim 1 , wherein the first metal layer has a thickness ranging from 1 um to 2.5 um.

11 . The circuit board of claim 10 , wherein a center line average roughness value (Ra) of a surface of the first metal layer satisfies a range between 200 nm and 600 nm, and

wherein a maximum section height value (Rt) of the surface of the first metal layer satisfies a range of 2 μm to 6 μm.

12 . The circuit board of claim 1 , further comprising:

a circuit pattern layer disposed on the first insulating layer,

wherein the coating layer includes a portion disposed on the upper surface of the first insulating layer,

wherein the circuit pattern layer includes:

a third metal layer disposed on the portion of the coating layer; and,

a fourth metal layer disposed on the third metal layer.

13 . The circuit board of claim 12 , wherein the portion of the coating layer disposed on the upper surface of the first insulating layer includes:

an overlapping region vertically overlapping the circuit pattern layer; and

a non-overlapping region excluding the overlapping region.

14 . The circuit board of claim 13 , further comprising:

a second insulating layer disposed on the first insulating layer,

wherein the overlapping region of the coating layer is in contact with the circuit pattern layer, and

wherein a non-overlapping region of the coating layer is in contact with the second insulating layer.

15 . A semiconductor package comprising:

an insulating layer having a through hole passing through an upper surface and a lower surface opposite to the upper surface;

a coating layer including a first portion disposed on an upper surface of the insulating layer and a second portion on an inner wall of the through hole of the insulating layer; and

a circuit pattern layer disposed on the first portion of the coating layer; and

a through electrode disposed on the second portion of the coating layer to fill the through hole,

wherein the circuit pattern layer and the through electrode include:

a first metal layer disposed on the first or second portion of the coating layer; and

a second metal layer disposed on the first metal layer,

wherein the coating layer includes a first functional group, and

wherein the insulating layer includes a reactive group bonded to the first functional group.

16 . The semiconductor package of claim 15 , wherein the reactive group of the insulating layer is generated by surface treating the insulating layer using at least one of corona and UV.

17 . The semiconductor package of claim 15 , wherein the reactive group of the insulating layer includes at least one of O═C—OR, O═C—OH, C═C, C—OH, and C—OR, and

the R is an alkyl group constituting the insulating layer.

18 . The semiconductor package of claim 15 , wherein the first functional group of the coating layer includes at least one of a carboxyl group (COOH) or C═C that combines with a reactive group of the insulating layer.

19 . The semiconductor package of claim 15 , wherein the reactive group of the insulating layer includes a hydroxyl group (OH).

20 . The semiconductor package of claim 15 , wherein the coating layer includes a second functional group that coordinates with the first metal layer.