Semiconductor devices having contact plugs
A semiconductor device includes a substrate including an active region. A gate structure is disposed in the substrate and extends to traverse the active region in a first horizontal direction. Bit line structures traverse the gate structure and extend in a second horizontal direction, intersecting the first horizontal direction. Fence structures are disposed between the bit line structures. The fence structures are spaced apart from each other in the second horizontal direction. A contact plug is disposed between the bit line structures and between the fence structures. The contact plug includes first and second side surfaces that are spaced apart from each other in the second horizontal direction and third and fourth side surfaces that are spaced apart from each other in the first horizontal direction. A doping concentration of the first side surface is higher than a doping concentration of the third side surface.
1 . A semiconductor device, comprising:
a substrate including an active region;
a gate structure disposed in the substrate and extending to traverse the active region in a first horizontal direction;
bit line structures traversing the gate structure and extending in a second horizontal direction, intersecting the first horizontal direction;
fence structures disposed between neighboring pairs of the bit line structures, the fence structures being spaced apart from each other in the second horizontal direction; and
a contact plug disposed between the neighboring pairs of the bit line structures and between neighboring pairs of the fence structures,
wherein the contact plug includes first and second side surfaces spaced apart from each other in the second horizontal direction and third and fourth side surfaces spaced apart from each other in the first horizontal direction, and
wherein a doping concentration of the first side surface is higher than a doping concentration of the third side surface.
2 . The semiconductor device of claim 1 , wherein a doping concentration of the contact plug over a depth in the second horizontal direction is highest on at least one of the first and second side surfaces.
3 . The semiconductor device of claim 1 , wherein a doping concentration of the contact plug over a depth in the second horizontal direction is lowest between the first side surface and the second side surface.
4 . The semiconductor device of claim 1 , wherein a doping concentration of the contact plug over a depth in the first horizontal direction is constant.
5 . The semiconductor device of claim 1 , wherein a doping concentration of the contact plug is about 1×10 20 atom/cm 3 to about 6×10 20 atom/cm 3 .
6 . The semiconductor device of claim 1 , wherein doping concentrations of the first side surface and the second side surface are higher than doping concentrations of the third side surface and the fourth side surface.
7 . The semiconductor device of claim 1 , wherein
the contact plug includes a first region and a second region having a doping concentration that is lower than a doping concentration of the first region, and
the first region is disposed along the first side surface and the second side surface of the contact plug.
8 . The semiconductor device of claim 7 , wherein the doping concentration of the first region is about 3×10 20 atom/cm 3 to about 6×10 20 atom/cm 3 .
9 . The semiconductor device of claim 7 , wherein
the contact plug includes an embedded portion disposed in the substrate and contacting the active region, and
a doping concentration of the embedded portion is lower than doping concentrations of the first region and the second region.
10 . The semiconductor device of claim 7 , wherein the first region extends along an upper surface of the contact plug.
11 . The semiconductor device of claim 10 , wherein the doping concentration of the contact plug over the depth in a vertical direction is highest on the upper surface of the contact plug.
12 . The semiconductor device of claim 1 , wherein the first side surface and the second side surface are each in contact with the fence structures.
13 . The semiconductor device of claim 1 , wherein the contact plug includes doped polysilicon.
14 . The semiconductor device of claim 1 , wherein the contact plug includes an n-type impurity.
15 . A semiconductor device, comprising:
a substrate including an active region;
a gate structure disposed in the substrate and extending to traverse the active region in a first horizontal direction;
bit line structures traversing the gate structure and extending in a second horizontal direction, intersecting the first horizontal direction;
fence structures disposed between neighboring pairs of the bit line structures, the fence structures being spaced apart from each other in the second horizontal direction; and
a contact plug disposed between the neighboring pairs of the bit line structures and between neighboring pairs of the fence structures,
wherein the contact plug includes an embedded portion, a first region, and a second region disposed on the embedded portion,
wherein a doping concentration of the first region is higher than a doping concentration of the second region,
wherein the first region is disposed along an upper surface of the contact plug and/or a side surface of the contact plug, and
wherein a doping concentration of the contact plug over a depth in a vertical direction is highest on the upper surface of the contact plug and/or the side surface of the contact plug.
16 . The semiconductor device of claim 15 , wherein a doping concentration of the embedded portion is lower than a doping concentration of the second region.
17 . The semiconductor device of claim 15 , wherein a doping concentration of the contact plug gradually decreases downwardly from the upper surface of the contact plug.
18 . The semiconductor device of claim 15 , wherein the doping concentration of the first region is about 3×10 20 atom/cm 3 to about 6×10 20 atom/cm 3 .
19 . A semiconductor device, comprising:
a substrate including an active region;
a gate structure disposed in the substrate and extending to traverse the active region in a first horizontal direction;
a first bit line structure and a second bit line structure extending to traverse the gate structure in a second horizontal direction, intersecting the first horizontal direction, the first bit line structure and the second bit line structure being spaced apart from each other in the first horizontal direction;
spacer structures covering side surfaces of the first bit line structure and the second bit line structure;
a first fence structure and a second fence structure disposed between the first bit line structure and the second bit line structure, the first fence structure and the second fence structure being spaced apart from each other in the second horizontal direction;
a contact plug disposed between the first bit line structure and the second bit line structure and between the first fence structure and the second fence structure; and
a landing pad disposed on the contact plug,
wherein the contact plug includes a first side surface contacting the first fence structure, a second side surface contacting the second fence structure, a third side surface facing the first bit line structure, and a fourth side surface facing the second bit line structure, and
wherein doping concentrations of the first side surface and the second side surface are each higher than doping concentrations of both the third side surface and the fourth side surface.
20 . The semiconductor device of claim 19 , wherein a doping concentration of the contact plug over a depth in the second horizontal direction is highest on the first side surface and/or second side surface.