IP Library › Granted Patent US 12696441
Granted Patent B2
US 12696441 · App. 18/671,641 · Granted Jul 28, 2026

Semiconductor structure

Inventors: Kai Jen (Taichung City, TW); Hsiang-Po Liu (Taichung City, TW)
Assignee: WINBOND ELECTRONICS CORP.
H10B12/482H10B12/01H10D64/20H10P14/61H10P50/73
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Quick Facts
Patent No.
US 12696441
App. No.
18/671,641
Granted
Jul 28, 2026
Kind
B2
Abstract

A semiconductor structure includes a substrate, an insulating layer formed on the substrate, and a plurality of pairs of linear structures arranged in parallel and formed in the insulating layer, wherein each pair of linear structures has a first linear structure and a second linear structure. There is a first space S 1 between an end portion of the first linear structure and an end portion of the second linear structure, there is a second space S 2 between a center portion of the first linear structure and a center portion of the second linear structure, and the second space S 2 is greater than the first space S 1.

Claims (21)

1 . A semiconductor structure, comprising:

a substrate;

an insulating layer formed on the substrate; and

a plurality of pairs of linear structures arranged in parallel and filled in the insulating layer, wherein each pair of linear structures has a first linear structure and a second linear structure,

wherein in each pair of linear structures, the insulating layer has a first width between an end of the first linear structure and an end of the second linear structure, each end being a point of the respective linear structure farthest from a center portion of the linear structure, and the insulating layer has a second width between the center portions of the first linear structure and the second linear structure, the second width being greater than the first width.

2 . The semiconductor structure as claimed in claim 1 , wherein a ratio of the first width to the second width is 0.40-0.98.

3 . The semiconductor structure as claimed in claim 1 , wherein an end portion of the first linear structure has a tapered width.

4 . The semiconductor structure as claimed in claim 1 , wherein an end portion of the first linear structure has a smooth curved shape.

5 . The semiconductor structure as claimed in claim 1 , wherein the first linear structure is a conductive line or an isolation structure.

6 . The semiconductor structure as claimed in claim 1 , wherein between two adjacent pairs of linear structures, the two linear structures respectively positioned on the mutually facing sides of the two adjacent pairs have end portions extending away from each other.

7 . The semiconductor structure as claimed in claim 1 , wherein the center portion of the first linear structure is parallel to the center portion of the second linear structure, and an end portion of the first linear structure is not parallel to an end portion of the second linear structure.

8 . The semiconductor structure as claimed in claim 1 , wherein an end portion of the first linear structure is neither parallel nor perpendicular to the center portion of the first linear structure.

9 . The semiconductor structure as claimed in claim 1 , wherein an end portion of the second linear structure is neither parallel nor perpendicular to the center portion of the second linear structure.

10 . The semiconductor structure as claimed in claim 1 , wherein an end portion of the first linear structure extends in a first extension direction, an end portion of the second linear structure extends in a second extension direction, and the first extension direction is different from the second extension direction.

11 . The semiconductor structure as claimed in claim 1 , wherein the first linear structure further comprises a first end portion and a second end portion, and the center portion of the first linear structure is between the first end portion of the first linear structure and the second end portion of the first linear structure.

12 . The semiconductor structure as claimed in claim 11 , wherein the second linear structure further comprises a first end portion and a second end portion, and the center portion of the second linear structure is between the first end portion of the second linear structure and the second end portion of the second linear structure,

wherein the first end portion of the first linear structure is adjacent to the first end portion of the second linear structure, and the second end portion of the first linear structure is adjacent to the second end portion of the second linear structure.

13 . The semiconductor structure as claimed in claim 12 , wherein the first end portion of the first linear structure extends from the center portion of the first linear structure toward the first end portion of the second linear structure.

14 . The semiconductor structure as claimed in claim 13 , wherein the second end portion of the first linear structure extends from the center portion of the first linear structure toward the second end portion of the first linear structure.

15 . The semiconductor structure as claimed in claim 14 , wherein the first end portion of the second linear structure extends from the center portion of the second linear structure toward the first end portion of the first linear structure.

16 . The semiconductor structure as claimed in claim 15 , wherein the second end portion of the second linear structure extends from the center portion of the second linear structure toward the second end portion of the first linear structure.