Gallium oxide planar MOS-Schottky rectifier
Ga 2 O 3 -based rectifier structure and method of forming the same. A Schottky diode structure is combined with a metal-oxide-semiconductor structure to provide a metal oxide-type Schottky barrier diode (MOSSBD) rectifier that includes an n-type β-Ga 2 O 3 drift layer on a β-Ga 2 O 3 substrate, the drift layer having a plurality of spaced-apart semi-insulating regions formed by in-situ ion implantation of acceptor species at predefined spatially defined regions of the drift layer to create alternating areas of n-type and semi-insulating regions within the n-type drift layer. The thus-formed structure achieves high forward bias current with low specific on-resistance when the anode is biased with positive voltage and low leakage current when the device is operated under reverse bias.
1 . A rectifier having high forward bias current with low specific on-resistance, comprising:
a β-Ga 2 O 3 n-type drift layer on a β-Ga 2 O 3 substrate; and
a plurality of spatially defined semi-insulating regions of ion-implanted acceptor species formed in the β-Ga 2 O 3 n-type drift layer;
wherein unimplanted regions of the β-Ga 2 O 3 n-type drift layer and the ion-implanted regions form alternating n-type and semi-insulating regions in the β-Ga 2 O 3 drift layer; and
wherein the ion-implanted acceptor species and a depth of the regions of ion-implanted acceptor species are configured to produce a predetermined electronic response in the rectifier.
2 . The rectifier according to claim 1 , wherein the rectifier is a planar metal oxide-type Schottky barrier diode (P-MOSSBD) rectifier having low on-resistance in forward bias and a low reverse current and high breakdown field in reverse bias.
3 . The rectifier according to claim 1 , wherein the ion-implanted acceptor species comprises nitrogen (N), magnesium (Mg), cobalt (Co), iron (Fe), beryllium (Be), calcium (Ca), strontium (Sr), zinc (Zn), or cadmium (Cd).
4 . The rectifier according to claim 1 , wherein the β-Ga 2 O 3 n-type drift layer is n-doped with silica (Si) or germanium (Ge).
5 . The rectifier according to claim 1 , wherein the regions of ion-implanted acceptor species are uniformly spaced.
6 . The rectifier according to claim 1 , wherein the regions of ion-implanted acceptor species are non-uniformly spaced.
7 . A rectifier having high forward bias current with low specific on-resistance, comprising:
a β-Ga 2 O 3 n-type drift layer on a β-Ga 2 O 3 substrate;
a semi-insulating β-Ga 2 O 3 layer formed on the drift layer;
a plurality of predetermined spatially defined N-type regions comprising donor ion-implanted species formed in the semi-insulating β-Ga 2 O 3 layer;
wherein unimplanted regions of the semi-insulating β-Ga 2 O 3 layer and the donor ion-implanted regions form alternating semi-insulating and N-type β-Ga 2 O 3 regions;
wherein the species and a depth of the trenches of implanted donor species are configured to produce a predetermined electronic response in the rectifier.
8 . The rectifier according to claim 7 , wherein the rectifier is a planar metal oxide-type Schottky barrier diode (P-MOSSBD) rectifier having low on-resistance in forward bias and a low reverse current and high breakdown field in reverse bias.
9 . The rectifier according to claim 7 , wherein the donor species comprise Si, Ge, or Sn.
10 . A method for forming a rectifier having high forward bias current with low specific on-resistance, comprising:
forming a β-Ga 2 O 3 n-type drift layer on a β-Ga 2 O 3 substrate; and
forming a plurality of spatially defined semi-insulating regions of ion-implanted acceptor species formed in the β-Ga 2 O 3 n-type drift layer;
wherein unimplanted regions of the β-Ga 2 O 3 n-type drift layer and the ion-implanted regions form alternating n-type and semi-insulating regions in the β-Ga 2 O 3 drift layer; and
wherein the ion-implanted acceptor species and a depth of the regions of ion-implanted acceptor species are configured to produce a predetermined electronic response in the rectifier.
11 . The method for forming a rectifier according to claim 10 , wherein the rectifier is a planar metal oxide-type Schottky barrier diode (P-MOSSBD) rectifier having low on-resistance in forward bias and a low reverse current and high breakdown field in reverse bias.
12 . The method for forming a rectifier according to claim 10 , wherein the ion-implanted acceptor species comprises nitrogen (N), magnesium (Mg), cobalt (Co), iron (Fe), beryllium (Be), calcium (Ca), strontium (Sr), zinc (Zn), or cadmium (Cd).
13 . The method for forming a rectifier according to claim 10 , wherein the β-Ga 2 O 3 n-type drift layer is n-doped with silica (Si) or germanium (Ge) Si or Ge.
14 . The method for forming rectifier according to claim 10 , wherein the regions of ion-implanted acceptor species are uniformly spaced.
15 . The method for forming a rectifier according to claim 10 , wherein the regions of ion-implanted acceptor species are non-uniformly spaced.
16 . A method for forming a rectifier having high forward bias current with low specific on-resistance, comprising:
forming a β-Ga 2 O 3 n-type drift layer on a β-Ga 2 O 3 substrate;
forming a semi-insulating β-Ga 2 O 3 layer formed on the drift layer; and
forming a plurality of predetermined spatially defined N-type regions comprising donor ion-implanted species formed in the semi-insulating β-Ga 2 O 3 layer;
wherein unimplanted regions of the β-Ga 2 O 3 n-type drift layer and the ion-implanted regions form alternating semi-insulating and N-type regions in the β-Ga 2 O 3 ; and
wherein the acceptor species and a depth of the trenches of implanted acceptor species are configured to produce a predetermined electronic response in the rectifier.
17 . The method for forming a rectifier according to claim 16 , wherein the rectifier is a planar metal oxide-type Schottky barrier diode (P-MOSSBD) rectifier having low on-resistance in forward bias and a low reverse current and high breakdown field in reverse bias.
18 . The method for forming a rectifier according to claim 16 , wherein the donor species comprise Si, Ge, or Sn.
19 . The method for forming rectifier according to claim 16 , wherein the trenches of implanted acceptor species are uniformly spaced.
20 . The method for forming a rectifier according to claim 16 , wherein the trenches of implanted acceptor species are non-uniformly spaced.