High-electron-mobility transistors with active blocks
Structures for a high-electron-mobility transistor and methods of forming such structures. The structure comprises a device structure that includes a gate and an ohmic contact, and one or more active blocks that are laterally positioned between the gate and the ohmic contact. The one or more active blocks are configured to receive a supply voltage that is different from ground.
1 . A structure comprising:
a device structure including a gate and a first ohmic contact; and
one or more first active blocks laterally positioned between the gate and the first ohmic contact, the one or more first active blocks configured to receive a supply voltage that is different from ground,
wherein the one or more first active blocks and the gate comprise p-type gallium nitride.
2 . The structure of claim 1 further comprising:
a substrate; and
a layer stack on the substrate, the layer stack including a top surface and a plurality of semiconductor layers each comprising a compound semiconductor material,
wherein the one or more first active blocks are positioned on the top surface of the layer stack.
3 . The structure of claim 2 wherein the gate is positioned on the layer stack, and the first ohmic contact is coupled to the layer stack.
4 . The structure of claim 2 wherein the device structure includes a second ohmic contact, the gate is laterally positioned between the first ohmic contact and the second ohmic contact, and further comprising:
one or more second active blocks positioned between the gate and the second ohmic contact, the one or more second active blocks configured to receive the supply voltage.
5 . The structure of claim 4 wherein the one or more second active blocks comprise p-type gallium nitride.
6 . The structure of claim 1 further comprising:
an inactive block adjacent to the gate; and
an interconnect structure including an electrical interconnection configured to couple the inactive block to ground.
7 . The structure of claim 6 wherein the inactive block is laterally positioned between the gate and the first ohmic contact.
8 . The structure of claim 1 further comprising:
an interconnect structure including an electrical interconnection; and
a power supply coupled by the electrical interconnection to the one or more first active blocks, the power supply configured to supply the supply voltage to the one or more first active blocks.
9 . The structure of claim 1 wherein the one or more first active blocks and the gate further comprise a metal.
10 . The structure of claim 1 further comprising:
an interconnect structure including a first electrical interconnection and a second electrical interconnection;
a first power supply coupled by the first electrical interconnection to the one or more first active blocks, the first power supply configured to supply the supply voltage to the one or more first active blocks; and
a second power supply coupled by the second electrical interconnection to the gate, the second power supply configured to supply a control voltage to the gate that is different from the supply voltage and that is different from ground.
11 . The structure of claim 1 wherein the gate has a gate length, and the one or more first active blocks have a width that is less than the gate length.
12 . A structure comprising:
a device structure including a gate, a first ohmic contact, and a second ohmic contact, the gate laterally positioned between the first ohmic contact and the second ohmic contact;
one or more first active blocks laterally positioned between the gate and the first ohmic contact, the one or more first active blocks configured to receive a supply voltage that is different from ground; and
one or more second active blocks positioned between the gate and the second ohmic contact, the one or more second active blocks configured to receive the supply voltage.
13 . The structure of claim 12 wherein the one or more first active blocks and the one or more second active blocks comprise p-type gallium nitride, and the gate comprises p-type gallium nitride.
14 . The structure of claim 12 further comprising:
an interconnect structure including an electrical interconnection; and
a power supply coupled by the electrical interconnection to the one or more first active blocks and to the one or more second active blocks, the power supply configured to supply the supply voltage to the one or more first active blocks and to the one or more second active blocks.
15 . The structure of claim 12 wherein the one or more first active blocks and the one or more second active blocks comprise a first material.
16 . The structure of claim 15 wherein the gate comprises a second material different from the first material.
17 . The structure of claim 16 wherein the first material is gallium nitride with a first concentration of p-type dopant, and the second material is gallium nitride with a second concentration of p-type dopant different from the first concentration of p-type dopant.
18 . The structure of claim 15 wherein the gate comprises a second material identical to the first material.
19 . The structure of claim 12 wherein the one or more first active blocks, the one or more second active blocks, and the gate further comprise a metal.
20 . A method comprising:
forming a device structure that includes a gate and an ohmic contact; and
forming one or more active blocks that are laterally positioned between the gate and the ohmic contact,
wherein the one or more active blocks are configured to receive a supply voltage that is different from ground, and the one or more active blocks and the gate comprise p-type gallium nitride.