Integrated assemblies and methods of forming integrated assemblies

1 . A method of forming an integrated assembly, comprising:

forming structures extending upwardly from a substrate; the first structures being spaced from one another by gaps along a first direction;

forming two-dimensional-material along an upper surface of the substrate within the gaps, and along sidewalls around the outer peripheries of the structures;

forming first electrostatic-doping-material over the substrate and in direct physical contact with lower regions of the sidewalls of the two-dimensional-material adjacent the first structures;

forming insulative material over the first electrostatic-doping-material and in direct physical contact with central regions of the sidewalls of the two-dimensional-material adjacent the structures;

forming a conductive-gate-structure over the first electrostatic-doping-material and adjacent the insulative material; and

forming second electrostatic-doping-material over the conductive-gate-structure and over the insulative material, the second electrostatic-doping-material being in direct physical contact with upper regions of the sidewalls of the two-dimensional-material adjacent the structures.

2 . The method of claim 1 wherein the substrate includes a conductive structure, and wherein the two-dimensional-material is formed directly against an upper surface of the conductive structure.

3 . The method of claim 2 wherein the conductive structure is a digit line, and wherein the conductive-gate-structure is part of a wordline.

4 . The method of claim 3 further comprising forming storage elements coupled with the upper regions of the two-dimensional-material.

5 . The method of claim 1 wherein the structures comprise silicon dioxide.

6 . The method of claim 1 wherein the first and second electrostatic-doping-materials each comprise one or more of AlO, SiN, ZrO and SiON, where the chemical formulas indicate primary constituents rather than specific stoichiometries.

7 . The method of claim 1 wherein the two-dimensional-material comprises one or more of graphene, graphyne, borophene, germanene, silicene, Si 2 BN, stanene, phosphorene, bismuthene, molybdenum disulfide, molybdenum diselenide, tungsten disulfide, tungsten diselenide, tin disulfide, rhenium disulfide, indium disulfide, and hafnium disulfide.

8 . The method of claim 1 wherein the two-dimensional-material is substantially entirely monocrystalline.

9 . A method of forming an integrated assembly, comprising:

forming an upwardly-extending pillar structure that extends upwardly relative to an upper surface of a substrate, the upwardly-extending structure having a pair of vertical sidewall surfaces along a cross-section, and having a top surface extending between the vertical sidewall surfaces; one of the vertical sidewall surfaces being a first vertical sidewall surface and the other of the vertical sidewall surfaces being a second vertical sidewall surface, an entirety of the upwardly-extending pillar structure consisting of one or more insulative materials;

forming a two-dimensional-material in direct physical contact with adjacent the first vertical sidewall surface and extending along an entirety of the first vertical sidewall surface; the two-dimensional-material having a lower sidewall region, an upper vertical sidewall region, and a central vertical sidewall region between the upper and lower vertical sidewall regions;

forming a first electrostatic-doping-material in direct physical contact with adjacent the lower vertical sidewall region of the two-dimensional-material;

forming a second insulative material in direct physical contact with adjacent the central vertical sidewall region of the two-dimensional-material and on an opposing side of the two-dimensional-material from the first vertical sidewall surface of the upwardly-extending pillar structure;

forming a conductive-gate-structure over the first electrostatic-doping-material, adjacent the second insulative material, and proximate the central region of the two-dimensional-material; and

forming a second electrostatic-doping-material over the conductive-gate-structure and in direct physical contact with adjacent the upper vertical sidewall region of the two-dimensional-material.

10 . The method of claim 9 wherein the first and second electrostatic-doping-materials are compositionally the same as one another.

11 . The method of claim 9 wherein the first and second electrostatic-doping-materials are compositionally different from one another.

12 . The method of claim 9 wherein the first and second electrostatic-doping-materials each comprise one or more of AIO, SiN, ZrO and SiON, where the chemical formulas indicate primary constituents rather than specific stoichiometries.

13 . The method of claim 9 wherein at least one of the first and second electrostatic-doping-materials comprises two different compositions and a gradient between the two different compositions.

14 . The method of claim 9 wherein the two-dimensional-material extends along the first and second vertical sidewall surfaces and across the top surface of the upwardly-extending pillar structure.

15 . The method of claim 14 wherein the conductive-gate-structure is a first conductive-gate-structure, and further comprising forming a second conductive-gate-structure on an opposing side of the upwardly-extending pillar structure from the first conductive-gate-structure; the first and second conductive-gate-structures being electrically coupled to one another.

16 . The method of claim 9 wherein the two-dimensional-material comprises one or more of carbon, boron, germanium, silicon, phosphorus, bismuth, indium, molybdenum, platinum, rhenium, tin, tungsten and hafnium.

17 . The method of claim 9 wherein the two-dimensional-material comprises one or more of graphene, graphyne, borophene, germanene, silicene, Si 2 BN, stanene, phosphorene, bismuthene, molybdenum disulfide, molybdenum diselenide, tungsten disulfide, tungsten diselenide, tin disulfide, rhenium disulfide, indium disulfide, and hafnium disulfide.

18 . The method of claim 9 wherein the two-dimensional-material comprises a stack consisting of 1 to 10 separate layers.

19 . The method of claim 9 wherein the two-dimensional-material comprises a thickness within a range of from about 0.5 nm to about 5 nm.

20 . A method of forming an integrated assembly, comprising:

forming a first conductive lines extending horizontally along a first direction;

forming pillar structures extending upwardly from the first conductive lines; the pillar structures comprising first insulative material, the pillar structures being spaced from one another by gaps along the first direction;

forming a two-dimensional-material extending along upper surfaces of the first conductive lines within the gaps, and along vertical sidewalls and upper surfaces outer peripheries of the pillar structures;

forming a first electrostatic-doping-material over and in direct physical contact with the two-dimensional material that is along the upper surfaces of the first conductive lines, the first electrostatic-doping-material being in direct physical contact with adjacent lower vertical sidewall regions of the two-dimensional-material adjacent the structures;

forming a second insulative material over the first electrostatic-doping-material and in direct physical contact with adjacent central vertical sidewall regions of the two-dimensional-material adjacent the structures;

forming second conductive lines extending along a second direction which crosses the first direction; the second conductive lines being over the first electrostatic-doping-material and being adjacent the second insulative material;

forming a second electrostatic-doping-material over the second conductive lines and over the second insulative material, the second electrostatic-doping-material being in direct physical contact with adjacent upper vertical sidewall regions of the two-dimensional-material adjacent the structures; and

forming storage elements coupled with the upper region of the two-dimensional-material.