Semiconductor device comprising contact hole reaching semiconductor layer

1 . A semiconductor device comprising:

a semiconductor layer;

a gate insulating layer;

a gate electrode;

a first insulating layer;

a second insulating layer; and

a conductive layer,

wherein the gate insulating layer is in contact with a top surface and a side surface of the semiconductor layer,

wherein the gate electrode comprises a region overlapping with the semiconductor layer with the gate insulating layer therebetween,

wherein the first insulating layer comprises an inorganic material,

wherein the first insulating layer is in contact with a top surface of the gate insulating layer and a top surface and a side surface of the gate electrode,

wherein the gate insulating layer and the first insulating layer comprise a first opening in a region overlapping with the semiconductor layer,

wherein the second insulating layer comprises an organic material,

wherein the second insulating layer comprises a second opening inside the first opening,

wherein the second insulating layer is in contact with a top surface and a side surface of the first insulating layer and a side surface of the gate insulating layer,

wherein the conductive layer is electrically connected to the semiconductor layer through the second opening, and

wherein, in a region where the conductive layer is in direct contact with a top surface of the semiconductor layer, the second insulating layer does not overlap with the conductive layer.

2 . The semiconductor device according to claim 1 , wherein an angle formed by a side surface of the second insulating layer and the top surface of the semiconductor layer is greater than or equal to 45° and less than 90°.

3 . The semiconductor device according to claim 1 ,

wherein the second insulating layer comprises a region in direct contact with the top surface of the semiconductor layer, and

wherein a width of the region is greater than or equal to 50 nm and less than or equal to 3000 nm.

4 . The semiconductor device according to claim 1 , wherein a transmittance of the second insulating layer in a wavelength range of greater than or equal to 200 nm and less than or equal to 350 nm is higher than or equal to 0.01% and lower than or equal to 70%.

5 . The semiconductor device according to claim 1 , wherein a transmittance of the organic material in a wavelength range of greater than or equal to 200 nm and less than or equal to 350 nm is higher than or equal to 0.01% and lower than or equal to 70%.

6 . The semiconductor device according to claim 1 , wherein the organic material comprises one or more of an acrylic resin, a polyimide resin, an epoxy resin, a polyamide resin, a polyimide-amide resin, a siloxane resin, a benzocyclobutene-based resin, a phenol resin, a novolac resin, a precursor of the acrylic resin, a precursor of the polyimide resin, a precursor of the epoxy resin, a precursor of the polyamide resin, a precursor of the polyimide-amide resin, a precursor of the siloxane resin, a precursor of the benzocyclobutene-based resin, a precursor of the phenol resin, and a precursor of the novolac resin.

7 . The semiconductor device according to claim 1 , further comprising a third insulating layer,

wherein the third insulating layer comprises an inorganic material,

wherein the third insulating layer comprises a third opening inside the second opening, and

wherein the third insulating layer is in contact with a top surface and the side surface of the second insulating layer.

8 . A semiconductor device comprising:

a semiconductor layer;

a gate insulating layer;

a gate electrode;

a first insulating layer;

a second insulating layer; and

a conductive layer,

wherein the gate insulating layer is in contact with a top surface of the semiconductor layer,

wherein the gate electrode comprises a region overlapping with the semiconductor layer with the gate insulating layer therebetween,

wherein the first insulating layer comprises an inorganic material,

wherein the first insulating layer is in contact with the top surface and a side surface of the semiconductor layer, a side surface of the gate insulating layer, and a top surface and a side surface of the gate electrode,

wherein the first insulating layer comprises a first opening in a region overlapping with the semiconductor layer,

wherein the second insulating layer comprises an organic material,

wherein the second insulating layer comprises a second opening inside the first opening,

wherein the second insulating layer is in contact with a top surface and a side surface of the first insulating layer,

wherein the conductive layer is electrically connected to the semiconductor layer through the second opening,

wherein the second insulating layer comprises a region in direct contact with the top surface of the semiconductor layer, and

wherein a width of the region of the second insulating layer is greater than or equal to 50 nm and less than or equal to 3000 nm.

9 . The semiconductor device according to claim 8 , wherein an angle formed by a side surface of the second insulating layer and the top surface of the semiconductor layer is greater than or equal to 45° and less than 90°.

10 . The semiconductor device according to claim 8 , wherein a transmittance of the second insulating layer in a wavelength range of greater than or equal to 200 nm and less than or equal to 350 nm is higher than or equal to 0.01% and lower than or equal to 70%.

11 . The semiconductor device according to claim 8 , wherein a transmittance of the organic material in a wavelength range of greater than or equal to 200 nm and less than or equal to 350 nm is higher than or equal to 0.01% and lower than or equal to 70%.

12 . The semiconductor device according to claim 8 , wherein the organic material comprises one or more of an acrylic resin, a polyimide resin, an epoxy resin, a polyamide resin, a polyimide-amide resin, a siloxane resin, a benzocyclobutene-based resin, a phenol resin, a novolac resin, a precursor of the acrylic resin, a precursor of the polyimide resin, a precursor of the epoxy resin, a precursor of the polyamide resin, a precursor of the polyimide-amide resin, a precursor of the siloxane resin, a precursor of the benzocyclobutene-based resin, a precursor of the phenol resin, and a precursor of the novolac resin.

13 . The semiconductor device according to claim 8 , further comprising a third insulating layer,

wherein the third insulating layer comprises an inorganic material,

wherein the third insulating layer comprises a third opening inside the second opening, and

wherein the third insulating layer is in contact with a top surface and the side surface of the second insulating layer.

14 . The semiconductor device according to claim 8 , wherein, in a region where the conductive layer is in direct contact with the top surface of the semiconductor layer, the second insulating layer does not overlap with the conductive layer.