Silicon carbide semiconductor device and method of manufacturing silicon carbide semiconductor device
A silicon carbide semiconductor device has a silicon carbide semiconductor substrate of a first conductivity type1, a first semiconductor layer of the first conductivity type, a second semiconductor layer of a second conductivity type, first semiconductor regions of the first conductivity type, trenches, gate insulating films, gate electrodes, a first electrode, and a second electrode. The second semiconductor layer has a second semiconductor region of a second conductivity type, an impurity concentration of the second semiconductor region increases in the depth direction, has a maximum value at a predetermined depth, and from the predetermined depth, in the depth direction, decreases; a half-width of the impurity concentration is 0.15 μm or less; and an impurity concentration of the plurality of first semiconductor regions is constant in the depth direction.
1 . A silicon carbide semiconductor device, comprising:
a silicon carbide semiconductor substrate of a first conductivity type, the silicon carbide semiconductor substrate having a first main surface and a second main surface that are opposite to each other;
a first semiconductor layer of the first conductivity type, provided on the first main surface of the silicon carbide semiconductor substrate, an impurity concentration of the first semiconductor layer being lower than an impurity concentration of the silicon carbide semiconductor substrate, the first semiconductor layer having a first surface and a second surface that are opposite to each other, the second surface of the first semiconductor layer facing the silicon carbide semiconductor substrate;
a second semiconductor layer of a second conductivity type, provided on the first surface of the first semiconductor layer, the second semiconductor layer having a first surface and a second surface that are opposite to each other, the second surface of the second semiconductor layer facing the first semiconductor layer;
a plurality of first semiconductor regions of the first conductivity type, selectively provided at the first surface of the second semiconductor layer;
a plurality of trenches penetrating through the first semiconductor regions and the second semiconductor layer, and reaching the first semiconductor layer;
a plurality of gate insulating films provided in the plurality of trenches, respectively;
a plurality of gate electrodes provided on the plurality of gate insulating films in the plurality of gate trenches, respectively;
a first electrode in contact with the second semiconductor layer and the plurality of first semiconductor regions;
a second electrode provided on the second main surface of the silicon carbide semiconductor substrate; and
a second semiconductor region of the second conductivity type, provided in the second semiconductor layer, the second semiconductor region having a first side and a second side that is opposite to the first side and closer to the second surface of the second semiconductor layer than is the first surface of the second semiconductor layer, wherein:
(i) with respect to a depth direction orthogonal to the first main surface from the first side toward the second side,
the first side of the second semiconductor region is positioned at or below a position of the first surface of the second semiconductor layer, and
the second side of the second semiconductor region is positioned at or above a position of the second surface of the second semiconductor layer,
(ii) in the second semiconductor region,
an impurity concentration of the second conductivity type along a vertical cross-section in the depth direction increases from the first side to a predetermined depth, and decreases from the predetermined depth to the second side, and
the impurity concentration has a maximum value along the vertical cross section at the predetermined depth in the depth direction orthogonal to the first main surface, and
(iii) a half-width of the impurity concentration is 0.15 μm or less, and an impurity concentration of each of the plurality of first semiconductor regions is constant in the depth direction.
2 . The silicon carbide semiconductor device according to claim 1 , wherein
the second semiconductor region is provided in the second semiconductor layer, closer to the first surface of the second semiconductor layer than to the second surface of the second semiconductor layer.
3 . The silicon carbide semiconductor device according to claim 1 , wherein
the second semiconductor layer is the second semiconductor region.
4 . The silicon carbide semiconductor device according to claim 3 , wherein
the predetermined depth at which the impurity concentration of the second semiconductor region has the maximum value is located closer to the first surface of the second semiconductor layer than to the second surface of the second semiconductor layer.
5 . The silicon carbide semiconductor device according to claim 1 , wherein
a thickness of the second semiconductor layer is in a range of 0.3 μm to 0.7 μm.
6 . The silicon carbide semiconductor device according to claim 1 , wherein
a thickness of each of the plurality of first semiconductor regions is in a range of 0.1 μm to 0.3 μm.
7 . The silicon carbide semiconductor device according to claim 1 , further comprising
a plurality of third semiconductor regions of the second conductivity type, selectively provided at the first surface of the second semiconductor layer, an impurity concentration of the plurality of third semiconductor regions being higher than the impurity concentration of the second semiconductor layer, wherein
a thickness of each of the plurality of third semiconductor regions is greater than a thickness of each of the plurality of first semiconductor regions.
8 . The silicon carbide semiconductor device according to claim 1 , wherein
the second semiconductor region is in direct contact with sidewalls of the plurality of trenches.
9 . A method of manufacturing the silicon carbide semiconductor device according to claim 1 , the method comprising: preparing the silicon carbide semiconductor substrate; forming the first semiconductor layer on the first main surface of the silicon carbide semiconductor substrate; forming the second semiconductor layer on the first surface of the first semiconductor layer; selectively forming the plurality of first semiconductor regions at the first surface of the second semiconductor layer; forming the plurality of trenches penetrating through the first semiconductor regions and the second semiconductor layer, and reaching the first semiconductor layer; forming, in the plurality of trenches, respectively, the plurality of gate insulating films along bottoms and sidewalls of the plurality of trenches; forming the plurality of gate electrodes on the plurality of gate insulating films in the trenches, respectively; forming the first electrode on the plurality of first semiconductor regions and the second semiconductor layer; and forming the second electrode on the second main surface of the silicon carbide semiconductor substrate, wherein forming the second semiconductor layer includes implanting therein an impurity of the second conductivity type by an acceleration voltage in a range of 100keV to 300keV, thereby forming the second semiconductor region of the second conductivity type, in which in a depth direction of the second semiconductor region from an upper side toward a bottom side of the second semiconductor region, the impurity concentration increases from the upper side to the predetermined depth from the upper side, and decreases from the predetermined depth to the bottom side, the impurity concentration of the second semiconductor region having the maximum value at the predetermined depth, andthe plurality of first semiconductor regions are epitaxially grown.
10 . The method according to claim 9 , wherein forming the second semiconductor layer includes epitaxially growing the second semiconductor layer, and implanting the impurity in the second semiconductor layer, thereby forming the second semiconductor region.
11 . The method according to claim 9 , wherein forming the second semiconductor layer includes epitaxially growing another semiconductor layer of the first conductivity type on the first surface of the first semiconductor layer, and implanting the impurity in the another semiconductor layer, thereby to form the second semiconductor layer and the second semiconductor region.
12 . The method according to claim 9 , further comprising selectively forming in the second semiconductor layer, at the first surface thereof, a plurality of third semiconductor regions of the second conductivity type, an impurity concentration of the plurality of third semiconductor regions being higher than an impurity concentration of the second semiconductor layer, wherein the plurality of third semiconductor regions are formed to be thicker than the first semiconductor regions.