Supportive layer in source/drains of FinFET devices
An embodiment is a semiconductor structure. The semiconductor structure includes a fin on a substrate. A gate structure is over the fin. A source/drain is in the fin proximate the gate structure. The source/drain includes a bottom layer, a supportive layer over the bottom layer, and a top layer over the supportive layer. The supportive layer has a different property than the bottom layer and the top layer, such as a different material, a different natural lattice constant, a different dopant concentration, and/or a different alloy percent content.
1 . A method of manufacturing a semiconductor device, the method comprising:
forming a first fin and a second fin that protrude from a top surface of a substrate;
forming an isolation region between the first fin and the second fin;
forming a first gate structure over the first fin and a second gate structure over the second fin;
forming a first source/drain in the first fin and a second source/drain in the second fin, wherein forming the first source/drain and the second source/drain comprises:
etching the first fin and the second fin to form a first recess proximate the first gate structure and a second recess proximate the second gate structure;
depositing a first bottom layer in the first recess and a second bottom layer in the second recess;
depositing a first supportive layer over the first bottom layer and a second supportive layer over the second bottom layer;
depositing a first top layer over the first supportive layer and a second top layer over the second supportive layer; and
forming a first capping layer over the first top layer and a second capping layer over the second top layer, wherein the isolation region is in physical contact with a first sidewall of the first bottom layer and a second sidewall of the second bottom layer, wherein the isolation region is disposed between a first portion of the first bottom layer and a first portion of the second bottom layer, wherein a first material of the first bottom layer and the second bottom layer is different from a second material of the first supportive layer and the second supportive layer, wherein the second material is different from a third material of the first top layer and the second top layer, wherein a thickness of the first supportive layer is smaller than thicknesses of the first bottom layer and the first top layer, wherein the first material of the first bottom layer and the second bottom layer has a higher germanium atomic percent than the second material of the first supportive layer and the second supportive layer.
2 . The method of claim 1 , wherein the thickness of the first bottom layer is greater than the thickness of the first top layer.
3 . The method of claim 1 , wherein the second material comprises silicon and the first material and the third material comprise silicon germanium.
4 . The method of claim 1 , wherein two or more of the first bottom layer, the first supportive layer, the first top layer, and the first capping layer are formed in the same process chamber.
5 . The method of claim 1 , further comprising forming a metal contact that extends through the first capping layer, wherein a bottom surface of the metal contact physically contacts a top surface of the first top layer.
6 . The method of claim 1 , wherein the second material comprises undoped silicon, and the first material and the third material comprise boron doped silicon germanium.
7 . The method of claim 6 , wherein the third material has a higher germanium atomic percent than the first material.
8 . The method of claim 7 , wherein a fourth material of the first capping layer and the second capping layer comprises silicon.
9 . A method of manufacturing a semiconductor device, the method comprising:
forming a first fin and a second fin that protrude from a top surface of a substrate;
forming an isolation region between the first fin and the second fin;
forming a first gate structure on the first fin and a second gate structure on the second fin;
forming a first recess in the first fin proximate the first gate structure;
forming a second recess in the second fin proximate the second gate structure;
forming a first source/drain in the first recess and a second source/drain in the second recess, wherein forming the first source/drain and the second source/drain comprises:
depositing a first bottom layer in the first recess and a second bottom layer in the second recess;
depositing a first supportive layer over the first bottom layer and a second supportive layer over the second bottom layer, wherein a first material of the first bottom layer and the second bottom layer is different from a second material of the first supportive layer and the second supportive layer; and
forming a first top layer over the first supportive layer and a second top layer over the second supportive layer, wherein a third material of the first top layer and the second top layer has a higher germanium atomic percent than the first material, wherein the isolation region is in physical contact with a first sidewall of the first bottom layer and a second sidewall of the second bottom layer, and wherein the isolation region is disposed between a first portion of the first bottom layer and a first portion of the second bottom layer.
10 . The method of claim 9 , wherein the second material comprises silicon and the first material and the third material comprise silicon germanium.
11 . The method of claim 9 , wherein forming the first source/drain and the second source/drain further comprises depositing a first capping layer over the first top layer and a second capping layer over the second top layer.
12 . The method of claim 11 , wherein the first capping layer and the second capping layer comprise a fourth material, and wherein the fourth material is the same as the second material.
13 . The method of claim 11 , wherein the first capping layer is merged with the second capping layer, the first top layer is merged with the second top layer, and the first supportive layer is merged with the second supportive layer.
14 . The method of claim 13 , wherein the first bottom layer and the second bottom layer are not in physical contact.
15 . The method of claim 13 , wherein the first bottom layer is merged with the second bottom layer.
16 . A method of manufacturing a semiconductor device, the method comprising:
forming a fin on a substrate;
forming a gate structure on the fin;
patterning a recess in the fin proximate the gate structure;
forming a source/drain in the recess, wherein forming the source/drain comprises:
depositing a bottom layer in the recess;
forming a supportive layer over the bottom layer;
forming a top layer over the supportive layer; and
depositing a capping layer over the top layer, wherein a first material of the bottom layer and a second material of the top layer is different from a third material of the supportive layer and a fourth material of the capping layer, wherein a bottommost surface of the capping layer is below a bottommost surface of the top layer and a bottommost surface of the supportive layer; and
forming a metal contact that extends completely through the capping layer, wherein the metal contact also extends partially through the top layer, wherein a bottom surface of the metal contact is in physical contact with a top surface of the top layer.
17 . The method of claim 16 , wherein a thickness of the bottom layer is greater than a thickness of the top layer.
18 . The method of claim 16 , wherein the first material and the second material comprise silicon germanium and the third material and the fourth material comprise silicon.
19 . The method of claim 16 , wherein the bottom layer has a thickness in a range from 30 nm to 50 nm and the top layer has a thickness in a range from 15 nm to 45 nm.
20 . The method of claim 19 , wherein the supportive layer has a thickness in a range from 0.5 nm to 4 nm.