SiC semiconductor substrate and fabrication method of the SiC semiconductor substrate
A semiconductor substrate disclosed herein includes: an SiC single crystal substrate; a graphene layer disposed on an Si plane of the SiC single crystal substrate; an SiC epitaxial growth layer disposed above the SiC single crystal substrate via the graphene layer; and a polycrystalline Si layer disposed on an Si plane of the SiC epitaxial growth layer. The semiconductor substrate may include a graphite substrate or an silicon substrate disposed on a polycrystalline Si layer. The semiconductor substrate may include an SiC polycrystalline growth layer disposed on a C plane of the SiC epitaxial growth layer.
1 . A semiconductor substrate comprising:
an SiC single crystal substrate;
a graphene layer disposed on an Si plane of the SiC single crystal substrate;
an SiC epitaxial growth layer disposed above the SiC single crystal substrate via the graphene layer and having an Si plane that is a surface on which a device is formed; and
a polycrystalline layer disposed on an Si plane of the SiC epitaxial growth layer.
2 . The semiconductor substrate according to claim 1 , wherein the polycrystalline layer comprises a polycrystalline Si layer or a polycrystal SiC layer.
3 . The semiconductor substrate according to claim 2 , further comprising a graphite substrate or a silicon substrate disposed on the polycrystalline layer.
4 . The semiconductor substrate according to claim 3 , further comprising an SiC polycrystalline growth layer disposed on a C plane of the SiC epitaxial growth layer.
5 . The semiconductor substrate according to claim 4 , wherein the SiC epitaxial growth layer comprises a highly doped layer having a higher impurity concentration than a layer of the SiC epitaxial growth layer that is on a plane in contact with the SiC polycrystalline growth layer.
6 . The semiconductor substrate according to claim 1 , further comprising a graphite substrate or a silicon substrate disposed on the polycrystalline layer.
7 . The semiconductor substrate according to claim 6 , further comprising an SiC polycrystalline growth layer disposed on a C plane of the SiC epitaxial growth layer.
8 . The semiconductor substrate according to claim 7 , wherein the SiC epitaxial growth layer comprises a highly doped layer having a higher impurity concentration than a layer of the SiC epitaxial growth layer that is on a plane in contact with the SiC polycrystalline growth layer.
9 . The semiconductor substrate according to claim 2 , further comprising an SiC polycrystalline growth layer disposed on a C plane of the SiC epitaxial growth layer.
10 . The semiconductor substrate according to claim 9 , wherein the SiC epitaxial growth layer comprises a highly doped layer having a higher impurity concentration than a layer of the SiC epitaxial growth layer that is on a plane in contact with the SiC polycrystalline growth layer.
11 . The semiconductor substrate according to claim 1 , wherein the graphene layer comprises a single-layer structure or multi-layer laminated structure of graphene.
12 . The semiconductor substrate according to claim 1 , further comprising an SiC polycrystalline growth layer disposed on a C plane of the SiC epitaxial growth layer.
13 . The semiconductor substrate according to claim 12 , wherein the SiC epitaxial growth layer comprises a highly doped layer having a higher impurity concentration than a layer of the SiC epitaxial growth layer that is on a plane in contact with the SiC polycrystalline growth layer.