SiC wafer having an end region with low concentrations of metal impurities and SiC epitaxial wafer

1 . A SiC wafer including an end region within 5 mm from an outer circumferential end,

wherein, in the end region,

the concentration of each of Ti, V and Zr is 5.0×10 11 atoms/cm 2 or less,

the concentration of each of Cr, Ni, Cu, W, Mo and Mn is 1.0×10 11 atoms/cm 2 or less, and

the concentration of each of B, Al and Fe is 5.0×10 12 atoms/cm 2 or less.

2 . The SiC wafer according to claim 1 ,

wherein, in the end region,

the concentration of each of Ti and V is 3.0×10 11 atoms/cm 2 or less,

the concentration of each of Cr and Zr is 5.0×10 10 atoms/cm 2 or less,

the concentration of each of Ni and Cu is 3.0×10 10 atoms/cm 2 or less,

the concentration of B is 3.0×10 12 atoms/cm 2 or less, and

the concentration of each of Al and Fe is 1.0×10 11 atoms/cm 2 or less.

3 . The SiC wafer according to claim 1 , which has a diameter of 149 mm or more.

4 . A SiC epitaxial wafer, comprising:

the SiC wafer according to claim 2 ; and

a SiC epitaxial layer formed on one surface of the SiC wafer.

5 . The SiC wafer according to claim 3 , which has a diameter of 199 mm or more.

6 . A SiC epitaxial wafer, comprising:

the SiC wafer according to claim 3 ; and

a SiC epitaxial layer formed on one surface of the SiC wafer.

7 . A SiC epitaxial wafer, comprising:

the SiC wafer according to claim 5 ; and

a SiC epitaxial layer formed on one surface of the SiC wafer.

8 . The SiC wafer according to claim 1 , which has a notch cut toward the inside of the SiC wafer.

9 . A SiC epitaxial wafer, comprising:

the SiC wafer according to claim 8 ; and

a SiC epitaxial layer formed on one surface of the SiC wafer.

10 . A SiC epitaxial wafer, comprising:

the SiC wafer according to claim 1 ; and

a SiC epitaxial layer formed on one surface of the SiC wafer.