Three-dimensional framework silicon/perovskite tandem solar cell and its preparation method

1 . A preparation method for a three-dimensional framework silicon/perovskite tandem solar cell, wherein the three-dimensional framework silicon/perovskite tandem solar cell is in a formal structure, and the preparation method for the three-dimensional framework silicon/perovskite tandem solar cell comprises the following steps:

step 1: preparing an n-type silicon nanowire on a substrate;

step 2: sequentially depositing an i-type intrinsic amorphous silicon layer, a p-type amorphous silicon layer and a top electrode light-transmitting layer on the n-type silicon nanowire; and

step 3: sequentially preparing an n-type transmission layer, a perovskite film, a p-type transmission layer, a buffer layer and a transparent electrode on the top electrode light-transmitting layer to obtain the three-dimensional framework silicon/perovskite tandem solar cell;

wherein the preparation method further comprises:

preparing metal tin (Sn) film nanoparticles on a surface of the substrate before preparing the n-type silicon nanowire on the substrate;

constructing a tunneling layer of a gold film on the top electrode light-transmitting layer before preparing the n-type transmission layer on the top electrode light-transmitting layer;

wherein the n-type silicon nanowire is multiple in quantity arranged in a spatial array; the i-type intrinsic amorphous silicon layer, the p-type amorphous silicon layer, the top electrode light-transmitting layer, the tunneling layer, the n-type transmission layer, the perovskite thin film, the p-type transmission layer, the buffer layer, and the transparent electrode are sequentially deposited around each of the multiple n-type silicon nanowires by a layer-by-layer manner to form the three-dimensional framework silicon/perovskite tandem solar cell; and

wherein the perovskite film is prepared by:

taking lead diiodide (PbI 2 ) powder and methylamine iodine (MAI) powder, depositing a layer of PbI 2 film with a thickness of 250 nm and subsequently depositing a layer of MAI film with a thickness of 250 nm at a deposition rate of 0.5 angstroms per second (Å/s) under a pressure of 10 pascals (Pa) to obtain a deposition product, and annealing the deposition product in dry air at 150° C. for 10 minutes to obtain the perovskite film.

2 . The preparation method for the three-dimensional framework silicon/perovskite tandem solar cell as claimed in claim 1 , wherein an annealing temperature of the n-type transmission layer is 150 Celsius degrees (° C.) to 500° C. for 30 minutes (min) to 60 min.

3 . The preparation method for the three-dimensional framework silicon/perovskite tandem solar cell as claimed in claim 1 , wherein the perovskite film is prepared by liquid-phase spin coating, vacuum vapor phase deposition or liquid-phase assisted vapor phase method.

4 . The preparation method for the three-dimensional framework silicon/perovskite tandem solar cell as claimed in claim 1 , wherein the n-type transmission layer is prepared by vapor deposition, magnetron sputtering, liquid phase spin coating/spraying or chemical water bath deposition; and the p-type transmission layer is prepared by liquid phase spin coating, vacuum vapor phase deposition or magnetron sputtering.

5 . The preparation method for the three-dimensional framework silicon/perovskite tandem solar cell as claimed in claim 1 , wherein, a length of the n-type silicon nanowire is 300 nanometers (nm) to 10000 nm and a diameter is 10 nm to 300 nm.

6 . The preparation method for the three-dimensional framework silicon/perovskite tandem solar cell as claimed in claim 1 , wherein, the substrate is one selected from the group consisting of a p-type silicon wafer, an n-type silicon wafer, an aluminum-doped zinc oxide (AZO) transparent conductive glass and a tin foil paper.