Energy harvest and storage device for semiconductor chips and methods for forming the same
A semiconductor structure may include semiconductor devices located on a substrate, metal interconnect structures that are located within dielectric material layers overlying the semiconductor devices and are electrically connected to the semiconductor devices, and an energy harvesting device located over the metal interconnect structures and comprising a Schottky barrier diode, a first diode electrode located on a first side of the Schottky barrier diode, and a second diode electrode connected to a second side of the Schottky barrier diode.
1 . A semiconductor structure comprising:
metal interconnect structures that are located within dielectric material layers and overlying a substrate;
an energy harvesting device located over the metal interconnect structures and comprising a Schottky barrier diode, wherein the Schottky barrier diode comprises a first diode electrode located on a first side of the Schottky barrier diode, and a second diode electrode connected to a second side of the Schottky barrier diode; and
a battery structure overlying the energy harvesting device and comprising an energy storage medium, wherein:
the battery structure comprises a first battery electrode that is the second diode electrode of the Schottky barrier diode;
the energy storage medium comprises an ionic crystal plate including an ionic crystal having ionic conductivity greater than 1.0×10 −5 S/cm in a temperature range from −40 degrees Celsius to 125 degrees Celsius; and
the battery structure comprises:
a blocking dielectric layer comprising a dielectric metal oxide material and located between the ionic crystal plate and the first battery electrode; and
a conductive metal oxide layer located between the blocking dielectric layer and the first battery electrode.
2 . The semiconductor structure of claim 1 , wherein the battery structure comprises a second battery electrode that overlies the energy storage medium.
3 . The semiconductor structure of claim 2 , wherein:
the first diode electrode of the Schottky barrier diode is electrically connected to a first metal interconnect structure selected from the metal interconnect structures; and
the second battery electrode of the battery structure is electrically connected to a second metal interconnect structure selected from the metal interconnect structures.
4 . The semiconductor structure of claim 2 , further comprising semiconductor devices located on the substrate, wherein the metal interconnect structures overlie the semiconductor devices and electrically connects the first diode electrode to a first node of the semiconductor devices and the second battery electrode to a second node of the semiconductor devices.
5 . The semiconductor structure of claim 1 , wherein the first battery electrode comprises a metallic material including at least one transition metal or a conductive metal oxide material.
6 . The semiconductor structure of claim 1 , wherein the Schottky barrier diode comprises a Schottky barrier junction located at an interface between a high work function plate including a high work function material having a work function greater than 4.5 eV and a compound semiconductor material plate including a compound semiconductor material.
7 . The semiconductor structure of claim 6 , wherein:
the compound semiconductor material has a band gap energy in a range from 0.1 eV to 0.35 eV;
the high work function material comprises a material selected from a transparent conductive oxide, ruthenium, rhodium, cobalt, gold, palladium, nickel, iridium, or platinum; and
the compound semiconductor material comprises a material selected from indium antimonide, indium arsenide, lead telluride, or bismuth telluride.
8 . A semiconductor structure comprising:
semiconductor devices located over a semiconductor substrate;
an energy harvesting device located over the semiconductor devices and comprising a Schottky barrier diode that comprises a first diode electrode and a second diode electrode; and
a battery structure overlying the energy harvesting device and comprising an energy storage medium, a first battery electrode, and a second battery electrode,
wherein a metal-containing layer comprises both the second diode electrode of the Schottky barrier diode and the first battery electrode, and has a first surface contacting a surface of the compound semiconductor material plate of the Schottky barrier diode and has a second surface located on an opposite side of the metal-containing layer and contacting a surface of the energy storage medium.
9 . The semiconductor structure of claim 2 , wherein the battery structure comprises a second battery electrode that overlies the energy storage medium.
10 . The semiconductor structure of claim 9 , further comprising metal interconnect structures that overlie the semiconductor devices and electrically connect the first diode electrode to a first node of the semiconductor devices and the second battery electrode to a second node of the semiconductor devices.
11 . The semiconductor structure of claim 8 , wherein the energy storage medium comprises an ionic crystal plate including an ionic crystal having ionic conductivity greater than 1.0×10 −5 S/cm in a temperature range from −40 degrees Celsius to 125 degrees Celsius.
12 . The semiconductor structure of claim 11 , wherein the battery structure comprises:
a blocking dielectric layer comprising a dielectric metal oxide material and located between the ionic crystal plate and the first battery electrode; and
a conductive metal oxide layer located between the blocking dielectric layer and the first battery electrode.
13 . The semiconductor structure of claim 8 , wherein:
the Schottky barrier diode comprises a Schottky barrier junction located at an interface between a high work function plate including a high work function material having a work function greater than 4.5 eV and a compound semiconductor material plate including a compound semiconductor material; and
the Schottky barrier junction has a vertical undulation in a vertical cross-sectional profile such that raised portions of the Schottky barrier junction are interlaced with recessed portions of the Schottky barrier junction.
14 . The semiconductor structure of claim 8 , wherein:
the Schottky barrier diode comprises a Schottky barrier junction located at an interface between the first diode electrode and a compound semiconductor material plate; and
the first diode electrode has openings therethrough; and
the compound semiconductor material plate has a greater area in a plan view than the first diode electrode.
15 . The semiconductor structure of claim 8 , wherein:
the Schottky barrier diode comprises a Schottky barrier junction located at an interface between a high work function plate including a high work function material having a work function greater than 4.5 eV and a compound semiconductor material plate including a compound semiconductor material; and
the Schottky barrier junction has a vertical undulation in a vertical cross-sectional profile such that raised portions of the Schottky barrier junction are interlaced with recessed portions of the Schottky barrier junction.
16 . The semiconductor structure of claim 8 , wherein:
the Schottky barrier diode comprises a Schottky barrier junction located at an interface between the first diode electrode and a compound semiconductor material plate;
the first diode electrode has openings therethrough; and
the compound semiconductor material plate has a greater area in a plan view than the first diode electrode.
17 . The semiconductor structure of claim 8 , wherein:
the compound semiconductor material has a band gap energy in a range from 0.1 eV to 0.35 eV;
the high work function material comprises a material selected from a transparent conductive oxide, ruthenium, rhodium, cobalt, gold, palladium, nickel, iridium, or platinum; and
the compound semiconductor material comprises a material selected from indium antimonide, indium arsenide, lead telluride, or bismuth telluride.
18 . A semiconductor structure comprising:
an energy harvesting device located over a semiconductor substrate and comprising a Schottky barrier diode, wherein the Schottky barrier diode comprises a first diode electrode located on a first side of the Schottky barrier diode, and a second diode electrode connected to a second side of the Schottky barrier diode, wherein the Schottky barrier diode comprises a Schottky barrier junction located at an interface between a high work function plate including a high work function material having a work function greater than 4.5 eV and a compound semiconductor material plate including a compound semiconductor material; and
a battery structure overlying the energy harvesting device and comprising an energy storage medium, a first battery electrode, and a second battery electrode,
wherein a metal-containing layer comprises both the second diode electrode of the Schottky barrier diode and the first battery electrode, and has a first surface contacting a surface of the compound semiconductor material plate of the Schottky barrier diode and has a second surface located on an opposite side of the metal-containing layer and contacting a surface of the energy storage medium.
19 . The semiconductor structure of claim 18 , wherein the first battery electrode comprises a metallic material including at least one transition metal or a conductive metal oxide material.
20 . The semiconductor structure of claim 18 , wherein:
the compound semiconductor material has a band gap energy in a range from 0.1 eV to 0.35 eV;
the high work function material comprises a material selected from a transparent conductive oxide, ruthenium, rhodium, cobalt, gold, palladium, nickel, iridium, or platinum; and
the compound semiconductor material comprises a material selected from indium antimonide, indium arsenide, lead telluride, or bismuth telluride.