Diode radiation sensor

1 . A diode radiation sensor at least one charge multiplication diode, said diode radiation sensor comprising:

a substrate made of a semiconductor material, having a front surface and a rear surface opposite said front surface;

a first layer of semiconductor material doped with a doping of a first type and made at least adjacently said front surface of said substrate, wherein the first type comprises n-type impurities, so as to cover at least a central area of said front surface of said substrate;

a second layer of semiconductor material doped with a doping of a second type of electrically opposite sign to said first type and arranged to a first depth in said substrate, wherein the second type comprises p-type impurities, said second layer of semiconductor material being parallel to said first layer of semiconductor material so as to create, between said first layer of semiconductor material and said second layer of semiconductor material, with a polarization of said diode radiation sensor, a high electric field region;

a third layer of said semiconductor material doped with a doping of said second type and arranged at a second depth in said substrate greater than said first depth, said third layer of semiconductor material being, is at least partially lateral to said second layer of semiconductor material; and

a first isolation region interposed between a lateral edge of said charge multiplication diode and said first and said second layer of semiconductor material, said first isolation region extending into said substrate from said front surface to said third layer of semiconductor material so as to create, between said lateral edge of said charge multiplication diode and said first isolation region in a first direction, and between said front surface and said third layer of semiconductor material, in a second direction orthogonal to said first direction, a working area electrically separated from said first and second layer of semiconductor material.

2 . The diode radiation sensor according to claim 1 , further comprising a second isolation region arranged peripherally to said substrate.

3 . The diode radiation sensor according to claim 2 , wherein said second isolation region reaches a third depth in said substrate greater than said second depth at which said third layer of semiconductor material is present.

4 . The diode radiation sensor according to claim 3 , wherein said second isolation region reaches said rear surface of said substrate.

5 . The diode radiation sensor according to claim 3 , further comprising a sixth layer of the semiconductor material doped with a doping of said second type arranged into said substrate starting from said third layer of semiconductor material and interposed between said substrate and said second isolation region.

6 . The diode radiation sensor according to claim 1 , further comprising at least one optical isolating element arranged inside said working area.

7 . The diode radiation sensor according to claim 1 , further comprising one or more electronic circuits arranged inside said working area.

8 . The diode radiation sensor according to claim 1 , further comprising a fourth layer of semiconductor material doped with a doping of said first type and arranged at least adjacently to said front surface of said substrate above said first layer of semiconductor material, said doping of said fourth layer of semiconductor material being greater than said doping of said first layer so as to obtain a conductivity of said fourth layer of semiconductor material greater than a conductivity of said first layer of semiconductor material.

9 . The diode radiation sensor according to claim 1 , further comprising an additional layer doped with doping of the second type, said additional layer being arranged on said rear surface of said substrate.