Image sensor including polarization patterns
An image sensor includes a substrate having a plurality of first pixel regions configured to generate image information and a plurality of second pixel regions configured to detect phase information, a grid pattern on the substrate and dividing a plurality of spaces corresponding to each of the plurality of first pixel regions and the plurality of second pixel regions. The image sensor also includes a plurality of color filters respectively in first spaces of the plurality of spaces, excluding second spaces corresponding to the plurality of second pixel regions, a plurality of polarization patterns respectively in the second spaces and partitioning the second spaces, and a microlens layer including a plurality of first microlenses respectively on the plurality of color filters.
1 . An image sensor comprising:
a substrate comprising a first surface and a second surface opposing the first surface;
a plurality of first pixel regions configured to generate image information, wherein the plurality of first pixel regions comprise first to fourth photoelectric conversion devices (PDs);
a plurality of second pixel regions configured to detect phase information, wherein the plurality of second pixel regions comprise fifth and sixth PDs;
a first microlens on the first PD;
a second microlens on the second PD;
a third microlens on the third PD;
a fourth microlens on the fourth PD;
a fifth microlens on the fifth and sixth PDs;
a first color filter on the second and third PDs; and
a plurality of patterns between the fifth PD and the fifth microlens and between the sixth PD and the fifth microlens,
wherein a width of the fifth microlens in a first direction parallel to the second surface in a plan view is greater than each of widths of the first to fourth microlenses in the first direction,
wherein the first to third PDs, the fifth and sixth PDs, and the fourth PD are sequentially arranged in the first direction, and
wherein the image sensor is configured to receive light on the second surface.
2 . The image sensor as claimed in claim 1 , further comprising:
a second color filter between the fourth PD and the fourth microlens,
wherein the first color filter is configured to allow light having a first wavelength to be transmitted through the first color filter,
wherein the second color filter is configured to allow light having a second wavelength to be transmitted through the second color filter, and
wherein the first wavelength is different from the second wavelength.
3 . The image sensor as claimed in claim 2 , wherein the first color filter is a red color filter.
4 . The image sensor as claimed in claim 2 , wherein the plurality of patterns comprise 10 patterns.
5 . The image sensor as claimed in claim 2 , wherein the plurality of patterns comprise 12 patterns.
6 . The image sensor as claimed in claim 2 , wherein the second color filter is a green color filter.
7 . The image sensor as claimed in claim 1 , wherein each of the plurality of patterns has a first width in the first direction and a first height in a second direction perpendicular to the first direction, and
wherein the first width and the first height are each greater than 0.
8 . The image sensor as claimed in claim 7 , wherein the plurality of patterns are spaced apart by 20 nm to 300 nm from each other in the first direction.
9 . The image sensor as claimed in claim 7 , further comprising:
a device isolation pattern between the sixth PD and the fourth PD; and
a grid pattern vertically overlapping the device isolation pattern.
10 . The image sensor as claimed in claim 9 , wherein:
a width of the grid pattern in the first direction is different from the first width in the first direction.
11 . The image sensor as claimed in claim 9 , wherein the width of the grid pattern in the first direction is greater than the first width in the first direction.
12 . The image sensor as claimed in claim 9 , wherein the first height is the same as a height of the grid pattern in the second direction.
13 . The image sensor as claimed in claim 9 , wherein the first height is lower than a height of the grid pattern in the second direction.
14 . The image sensor as claimed in claim 1 , wherein the plurality of patterns include tungsten, TiO2, a low-k material, tetraethoxysilane, or an air gap.
15 . An image sensor comprising:
a substrate comprising a first surface and a second surface opposing the first surface;
a plurality of first pixel regions configured to generate image information, wherein the plurality of first pixel regions comprises first to fourth photoelectric conversion devices (PDs);
a plurality of second pixel regions configured to detect phase information, wherein the plurality of second pixel regions comprises fifth to eighth PDs;
a first microlens on the first PD;
a second microlens on the second PD;
a third microlens on the third PD;
a fourth microlens on the fourth PD;
a fifth microlens on the fifth and sixth PDs;
a seventh microlens on the seventh and eighth PDs;
a first color filter on the first PD;
a second color filter on the fourth PD;
a plurality of first patterns between the fifth PD and the fifth microlens and between the sixth PD and the fifth microlens; and
a plurality of second patterns between the seventh PD and the seventh microlens and between the eighth PD and the seventh microlens,
wherein a width of the fifth microlens in a first direction parallel to the second surface in a plan view is greater than each of widths of the first to fourth microlenses in the first direction,
wherein the first to eighth PDs are sequentially arranged in the first direction, and
wherein the image sensor is configured to receive light on the second surface.
16 . The image sensor as claimed in claim 15 , wherein the plurality of first patterns comprise 10 patterns.
17 . The image sensor as claimed in claim 15 , wherein the plurality of first patterns comprise 12 patterns.
18 . The image sensor as claimed in claim 15 , wherein the plurality of patterns are spaced apart by 20 nm to 300 nm from each other in the first direction.
19 . The image sensor of claimed in claim 15 , further comprising:
a device isolation pattern between the sixth PD and the seventh PD; and
a grid pattern vertically overlapping the device isolation pattern.
20 . An image sensor comprising:
a substrate comprising a first surface and a second surface opposing the first surface;
a plurality of first pixel regions configured to generate image information, wherein the plurality of first pixel regions comprise a first photoelectric conversion device (PD);
a plurality of second pixel regions configured to detect phase information, wherein the plurality of second pixel regions comprise second to fifth PDs;
a first microlens on the first PD;
a second microlens on the second and third PDs;
a third microlens on the fourth and the fifth PDs
a first color filter on the first PD;
a plurality of first patterns between the second PD and the second microlens and between the third PD and the second microlens; and
a plurality of second patterns between the fourth PD and the third microlens and between the fifth PD and the third microlens,
wherein a width of the second microlens in a first direction parallel to the second surface in a plan view is greater than a width of the first microlenses in the first direction,
wherein the first PD and the second to fifth PDs are sequentially arranged in the first direction,
wherein, among the plurality of first pixel region, two or more first pixel regions are disposed between the second microlens and the third microlens in a plan view,
wherein the image sensor is configured to receive light on the second surface.