Solar cell, ALOx depositing method therefor, and cell back passivation structure and method

1 . An AlOx depositing method for a solar cell, comprising:

placing a silicon wafer which has been subjected to thermal oxidization and annealing into a tubular PECVD equipment;

vacuumizing a chamber of the tubular PECVD equipment to a pressure of 100 mTorr to 2000 mTorr, heating the chamber to a temperature of 300° C. to 400° C., and then introducing nitrous oxide and trimethylaluminum (TMA) as reaction gases into the chamber; and

turning on a radio-frequency power supply of the tubular PECVD equipment and preparing an AlOx passivation film having a two-layer film structure, during which each layer of the AlOx passivation film is treated with NH 3 and N 2 O;

wherein two layers of the AlOx passivation film are prepared at different depositing speeds, wherein:

a bottom layer of the AlOx passivation film is prepared under following process condition: a nitrous oxide flow rate of 3500 sccm to 4500 sccm, a TMA flow rate of 30 sccm to 60 sccm, a radio-frequency power of 4000 W to 6000 W, a pulse duty ratio of 20:(1000-1500), and a process time of 40 s to 80 s; and

a top layer of the AlOx passivation film is prepared under following process condition: a nitrous oxide flow rate of 2500 sccm to 3500 sccm, a TMA flow rate of 50 sccm to 100 sccm, a radio-frequency power of 6000 W to 8000 W, a pulse duty ratio of 20:(800-1200), and a process time of 80 s to 150 s.

2 . A back passivation method for a solar cell, comprising:

step 1), preparing a silicon oxide layer on a silicon wafer substrate by an increased oxygen flow rate process in a manner of single-insertion, front-to-front, or back-to-back;

step 2), placing the silicon wafer substrate from step 1) into a tubular PECVD equipment, vacuumizing a chamber of the tubular PECVD equipment to a pressure of 100 mTorr to 2000 mTorr, heating the chamber to a temperature of 300° C. to 400° C., then introducing nitrous oxide and trimethylaluminum (TMA) as reaction gases into the chamber, turning on a radio-frequency power supply of the tubular PECVD equipment, and preparing a bottom layer of an AlOx film under the following process condition: a nitrous oxide flow rate of 3500 sccm to 4500 sccm, a TMA flow rate of 30 sccm to 60 sccm, a radio-frequency power of 4000 W to 6000 W, a pulse duty ratio of 20:(1000-1500), and a process time of 40 s to 80 s;

step 3), after removing a residual gas from step 2), introducing NH 3 and N 2 O, and performing H-passivation and oxidation treatment on the bottom layer of the AlOx film;

step 4), after removing a residual gas from step 3), preparing a top layer of the AlOx film under the following process condition: a nitrous oxide flow rate of 2500 sccm to 3500 sccm, a TMA flow rate of 50 sccm to 100 sccm, a radio-frequency power of 6000 W to 8000 W, a pulse duty ratio of 20:(800-1200), and a process time of 80 s to 150 s;

step 5), after removing a residual gas from step 4), introducing NH 3 and N 2 O while increasing the temperature of the chamber, and performing H-passivation and oxidation treatment on the top layer of the AlOx film; and

step 6), heating the chamber to a temperature to 400° C. to 550° C., and preparing a film of silicon nitride or a composite film of silicon nitride in combination with one or both of silicon oxynitride and silicon oxide.

3 . The back passivation method of claim 2 , wherein in step 1), the manner of back-to-back is adopted, and a thermal oxidation is performed at a temperature of 650° C. to 750° C. with a O 2 flow rate of 2500 sccm to 4000 sccm for a time of 20 min to 40 min.

4 . The back passivation method of claim 2 , wherein in step 1), the manner of single insertion is adopted to prepare silicon oxide layers on both sides of the silicon wafer substrate which has been subjected to an alkaline polishing, and a thermal oxidation is performed at a temperature of 700° C. with a O 2 flow rate of 3000 sccm for a time of 25 min.

5 . The back passivation method of claim 2 , wherein in step 3) or step 5), the H-passivation and oxidation treatment is performed on the AlOx film under following process condition: a NH 3 and N 2 O flow rate of 1000 sccm to 4000 sccm, a vacuum pressure of 500 mTorr to 2000 mTorr, a radio-frequency power of 2500 W to 5000 W, a pulse duty ratio of 30:(100-500), and a process time of 100 s to 300 s.

6 . The back passivation method of claim 5 , wherein in step 3) to step 5), the residual gas is removed by vacuumizing the chamber under a pressure of 0 mTorr to 100 mTorr for 20 s to 60 s.

7 . A back passivation structure for a solar cell, comprising a silicon wafer substrate and a silicon oxide layer disposed on the silicon wafer substrate, characterized in that an AlOx film is disposed on the silicon oxide layer, and the AlOx film has a two-layer film structure, wherein the AlOx film is prepared by:

placing the silicon wafer substrate with the silicon oxide layer into a tubular PECVD equipment;

vacuumizing a chamber of the tubular PECVD equipment to a pressure of 100 mTorr to 2000 mTorr, heating the chamber to a temperature of 300° C. to 400° C., and then introducing nitrous oxide and trimethylaluminum (TMA) as reaction gases into the chamber; and

turning on a radio-frequency power supply of the tubular PECVD equipment and preparing the AlOx film, during-which each layer of the AlOx film is treated with NH 3 and N 2 O;

wherein a bottom layer of the AlOx film is prepared under the following process condition: a nitrous oxide flow rate of 3500 sccm to 4500 sccm, a TMA flow rate of 30 sccm to 60 sccm, a radio-frequency power of 4000 W to 6000 W, a pulse duty ratio of 20:(1000-1500), and a process time of 40 s to 80 s;

wherein a top layer of the AlOx film is prepared under the following process condition: a nitrous oxide flow rate of 2500 sccm to 3500 sccm, a TMA flow rate of 50 sccm to 100 sccm, a radio-frequency power of 6000 W to 8000 W, a pulse duty ratio of 20:(800-1200), and a process time of 80 s to 150 s.

8 . The back passivation structure of claim 7 , wherein the back passivation structure is prepared by a back passivation method comprising:

step 1), preparing the silicon oxide layer on the silicon wafer substrate by an increased oxygen flow rate process in a manner of single-insertion, front-to-front, or back-to-back;

step 2), placing the silicon wafer substrate from step 1) into a tubular PECVD equipment, vacuumizing a chamber of the tubular PECVD equipment to a pressure of 100 mTorr to 2000 mTorr, heating the chamber to a temperature of 300° C. to 400° C., then introducing nitrous oxide and trimethylaluminum (TMA) as reaction gases into the chamber, turning on a radio-frequency power supply of the tubular PECVD equipment, and preparing a bottom layer of the AlOx film under the following process condition: a nitrous oxide flow rate of 3500 sccm to 4500 sccm, a TMA flow rate of 30 sccm to 60 sccm, a radio-frequency power of 4000 W to 6000 W, a pulse duty ratio of 20:(1000-1500), and a process time of 40 s to 80 s;

step 3), after removing a residual gas from step 2), introducing NH 3 and N 2 O, and performing H-passivation and oxidation treatment on the bottom layer of the AlOx film;

step 4), after removing a residual gas from step 3), preparing a top layer of the AlOx film under the following process condition: a nitrous oxide flow rate of 2500 sccm to 3500 sccm, a TMA flow rate of 50 sccm to 100 sccm, a radio-frequency power of 6000 W to 8000 W, a pulse duty ratio of 20:(800-1200), and a process time of 80 s to 150 s;

step 5), after removing a residual gas from step 4), introducing NH 3 and N 2 O while increasing the temperature of the chamber, and performing H-passivation and oxidation treatment on the top layer of the AlOx film; and

step 6), heating the chamber to a temperature to 400° C. to 550° C., and preparing a film of silicon nitride or a composite film of silicon nitride in combination with one or both of silicon oxynitride and silicon oxide.

9 . A solar cell, comprising the back passivation structure of claim 7 .