Semiconductor device
A semiconductor device includes a substrate, a buffer layer, a gradient layer, an active layer, a window layer, and an optical filtering layer. The substrate includes a first element and a second element. The buffer layer is disposed on the substrate. The gradient layer is formed on the buffer layer, and includes sublayers. Each sublayer includes the first, second, and third elements. For each sublayer, a lattice constant thereof is adjusted by changing a ratio of the second element to the third element. The active layer is formed on the gradient layer, and includes the first, second, and third elements. The window layer is formed on the active layer. The optical filtering layer includes the first, second, and third elements, and is formed on the window layer to block a portion of light having a wavelength in a predetermined wavelength range.
1 . A semiconductor device, comprising:
a substrate that includes a first element and a second element;
a buffer layer disposed on said substrate;
a gradient layer formed on said buffer layer, and including a plurality of sublayers, each of said sublayers including said first element, said second element, and a third element, wherein, for each of said sublayers, a lattice constant thereof is adjusted by changing a ratio of said second element to said third element;
an active layer formed on said gradient layer, and including said first element, said second element, and said third element, a lattice constant of said active layer being greater than said lattice constant of each of said sublayers of said gradient layer;
a window layer formed on said active layer, and
an optical filtering layer including said first element, said second element, and said third element, and formed on said window layer to block a portion of light having a wavelength in a predetermined wavelength.
2 . The semiconductor device as claimed in claim 1 , wherein said first element is arsenic, and said second element is gallium.
3 . The semiconductor device as claimed in claim 2 , wherein said third element is indium.
4 . The semiconductor device as claimed in claim 3 , wherein the ratio of said second element to said third element in said optical filtering layer is (1-X):X, and X ranges from 0.20 to 0.25.
5 . The semiconductor device as claimed in claim 3 , wherein said optical filtering layer further includes a fourth element, a ratio of said second element to said third element to said fourth element being (1-X-Y):X:Y, X ranging from 0.20 to 0.25, Y being no greater than 0.05.
6 . The semiconductor device as claimed in claim 5 , wherein said fourth element is aluminum.
7 . The semiconductor device as claimed in claim 1 , wherein the ratio of said second element to said third element in said optical filtering layer is (1-X):X, and X ranges from 0.20 to 0.25.
8 . The semiconductor device as claimed in claim 1 , wherein said optical filtering layer further includes a fourth element, a ratio of said second element to said third element to said fourth element being (1-X-Y):X:Y, X ranging from 0.20 to 0.25, Y being no greater than 0.05.
9 . The semiconductor device as claimed in claim 1 , wherein said optical filtering layer has a thickness ranging from 1.5 μm to 4.0 μm.
10 . The semiconductor device as claimed in claim 1 , wherein a ratio of said second element to said third element in each of said sublayers is different.
11 . The semiconductor device as claimed in claim 1 , wherein in a direction from said substrate to said active layer, contents of said second element in said sublayers change in a gradual manner, and contents of said third element in said sublayers decrease in a gradual manner.
12 . The semiconductor device as claimed in claim 11 , wherein in said direction from said substrate to said active layer, said contents of said second element in said sublayers increase in a gradual manner, and said contents of said third element in said sublayers decrease in a gradual manner.
13 . The semiconductor device as claimed in claim 11 , wherein in said direction from said substrate to said active layer, said contents of said second element in said sublayers decrease in a gradual manner, and said contents of said third element in said sublayers increase in a gradual manner.
14 . The semiconductor device as claimed in claim 1 , said lattice constant of each of said sublayers is greater than a lattice constant of said substrate.
15 . The semiconductor device as claimed in claim 1 , wherein said lattice constants of said sublayers gradually vary between a lattice constant of said substrate to said lattice constant of said active layer.