Nitride semiconductor element and method of manufacturing nitride semiconductor element
A method of manufacturing a nitride semiconductor element includes: providing a first light emission part comprising a first n-side semiconductor layer, a first active layer formed on the first n-side semiconductor layer, and a first p-side semiconductor layer formed on the first active layer; forming a first layer such that the first layer contains an n-type impurity of a first concentration; forming a second layer such that the second layer contains an n-type impurity of a second concentration lower than the first concentration, wherein a thickness of the second layer is greater than a thickness of the first layer; and forming a second light emission part comprising: a second n-side semiconductor layer such that the second n-side semiconductor layer contains an n-type impurity of a third concentration lower than the first concentration and the second concentration, a second active layer, and a second p-side semiconductor layer.
1 . A method of manufacturing a nitride semiconductor element comprising:
providing a first light emission part comprising a first n-side semiconductor layer, a first active layer formed on the first n-side semiconductor layer, and a first p-side semiconductor layer formed on the first active layer;
forming a first layer on the first p-side semiconductor layer such that the first layer contains an n-type impurity of a first concentration;
forming a second layer on the first layer such that the second layer contains an n-type impurity of a second concentration lower than the first concentration, wherein a thickness of the second layer is greater than a thickness of the first layer; and
forming a second light emission part comprising:
a second n-side semiconductor layer formed on the second layer such that the second n-side semiconductor layer contains an n-type impurity of a third concentration lower than the first concentration and the second concentration,
a second active layer formed on the second n-side semiconductor layer, and
a second p-side semiconductor layer formed on the second active layer.
2 . The method of manufacturing a nitride semiconductor element according to claim 1 , wherein:
the first concentration is 1.5 times or more and 100 times or less of the maximum value of the second concentration.
3 . The method of manufacturing a nitride semiconductor element according to claim 1 , wherein:
the first concentration is in a range of 2×10 20 cm −3 to 1×10 22 cm −3 , and
the second concentration is in a range of 1×10 19 cm −3 to 2×10 20 cm −3 .
4 . The method of manufacturing a nitride semiconductor element according to claim 2 , wherein:
the first concentration is in a range of 2×10 20 cm −3 to 1×10 22 cm −3 , and
the second concentration is in a range of 1×10 19 cm −3 to 2×10 20 cm −3 .
5 . The method of manufacturing a nitride semiconductor element according to claim 1 , wherein:
the first concentration is in a range of 2×10 20 cm −3 to 5×10 20 cm −3 , and
the second concentration is in a range of 1×10 19 cm −3 to 2×10 20 cm −3 .
6 . The method of manufacturing a nitride semiconductor element according to claim 1 , wherein:
the thickness of the second layer is in a range of 5 to 60 times the thickness of the first layer.
7 . The method of manufacturing a nitride semiconductor element according to claim 2 , wherein:
the thickness of the second layer is in a range of 5 to 60 times the thickness of the first layer.
8 . The method of manufacturing a nitride semiconductor element according to claim 3 , wherein:
the thickness of the second layer is in a range of 5 to 60 times the thickness of the first layer.
9 . The method of manufacturing a nitride semiconductor element according to claim 1 , wherein:
the thickness of the first layer is in a range of 1 nm to 10 nm.
10 . The method of manufacturing a nitride semiconductor element according to claim 2 , wherein:
the thickness of the first layer is in a range of 1 nm to 10 nm.
11 . The method of manufacturing a nitride semiconductor element according to claim 1 , wherein:
the thickness of the second layer is in a range of 15 nm to 60 nm.
12 . The method of manufacturing a nitride semiconductor element according to claim 3 , wherein:
the thickness of the second layer is in a range of 15 nm to 60 nm.
13 . The method of manufacturing a nitride semiconductor element according to claim 8 , wherein:
the thickness of the second layer is in a range of 15 nm to 60 nm.
14 . The method of manufacturing a nitride semiconductor element according to claim 1 , wherein:
a sum of the thickness of the first layer and the thickness of the second layer is in a range of 20 nm to 50 nm.
15 . The method of manufacturing a nitride semiconductor element according to claim 8 , wherein:
a sum of the thickness of the first layer and the thickness of the second layer is in a range of 20 nm to 50 nm.
16 . The method of manufacturing a nitride semiconductor element according to claim 12 , wherein:
a sum of the thickness of the first layer and the thickness of the second layer is in a range of 20 nm to 50 nm.
17 . The method of manufacturing a nitride semiconductor element according to claim 1 , wherein:
the thickness of the first layer is smaller than a thickness of the second n-side semiconductor layer, and
the thickness of the second layer is smaller than the thickness of the second n-side semiconductor layer.
18 . The method of manufacturing a nitride semiconductor element according to claim 16 , wherein:
the thickness of the first layer is smaller than a thickness of the second n-side semiconductor layer, and
the thickness of the second layer is smaller than the thickness of the second n-side semiconductor layer.