Display device using semiconductor light-emitting element

1 . A display device comprising:

a base;

a plurality of assembly electrodes extending in one direction and disposed on the base;

a dielectric layer disposed to cover the assembly electrodes;

a barrier rib stacked on the dielectric layer while forming holes to overlap the assembly electrodes;

semiconductor light-emitting elements disposed inside the holes; and

wiring electrodes electrically connected to the semiconductor light-emitting elements,

wherein each of the holes contains a by-product produced by materials constituting the assembly electrodes and the dielectric layer therein, and

wherein the by-product is produced in at least one region between the semiconductor light-emitting element and the dielectric layer and between the semiconductor light-emitting element and the barrier rib.

2 . The display device of claim 1 , wherein the by-product is AlO x .

3 . The display device of claim 2 , wherein the AlO x is produced irregularly inside the holes.

4 . The display device of claim 1 , wherein each of the assembly electrodes includes a plurality of layers, and

wherein a layer in contact with the dielectric layer, among the plurality of layers, is formed to contain Al.

5 . The display device of claim 1 , wherein the dielectric layer is made of an Al 2 O 3 material.

6 . The display device of claim 1 , wherein the dielectric layer is a porous layer made of an SiO 2 or SiN x material.

7 . The display device of claim 1 , wherein each of the semiconductor light-emitting elements comprises:

a first conductive electrode;

a first conductive semiconductor layer having the first conductive electrode formed thereon;

an active layer formed on the first conductive semiconductor layer;

a second conductive semiconductor layer formed on the active layer; and

a second conductive electrode formed on the second conductive semiconductor layer, and

wherein the semiconductor light-emitting element is formed symmetrically with respect to at least one direction.

8 . The display device of claim 7 , wherein at least one of the first conductive electrode and the second conductive electrode contains a magnetic substance.

9 . The display device of claim 7 , further comprising a planarization layer formed to cover one surface of the semiconductor light-emitting element,

wherein the planarization layer comprises:

a first electrode hole exposing the first conductive electrode of the semiconductor light-emitting element; and

a second electrode hole exposing the second conductive electrode of the semiconductor light-emitting element.

10 . The display device of claim 9 , wherein the wiring electrodes are disposed on the planarization layer, and

wherein the wiring electrodes are electrically connected to the semiconductor light-emitting element through the first electrode hole and the second electrode hole, respectively.

11 . A display device A display device comprising:

a base;

a plurality of assembly electrodes extending in one direction and disposed on the base;

a dielectric layer disposed to cover the assembly electrodes;

a barrier rib stacked on the dielectric layer while forming holes to overlap the assembly electrodes;

semiconductor light-emitting elements disposed inside the holes; and

wiring electrodes electrically connected to the semiconductor light-emitting elements,

wherein the assembly electrodes are formed to contain Al,

wherein each of the holes contains AlO x therein,

wherein each of the assembly electrodes includes a plurality of layers, and

wherein a layer in contact with the dielectric layer, among the plurality of layers, is formed to contain Al.